公开(公告)号：US20240203833A1

公开(公告)日：2024-06-20

申请号：US18541254

申请日：2023-12-15

申请人： SAMSUNG ELECTRONICS CO., LTD

发明人： Jungil SON ,  Taeyoon KIM ,  Kunwoo KU ,  Sungwook MOON

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L23/00 ,  H01L23/522

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L23/5226 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13007

摘要： The present disclosure provides a semiconductor chip. In some embodiments, a semiconductor chip includes a semiconductor substrate, an integrated circuit layer formed on the semiconductor substrate, and a plurality of metal wiring layers sequentially formed on the semiconductor substrate and the integrated circuit layer. The semiconductor chip further includes a first through via structure bundle extending in a vertical direction from a first metal wiring layer of the plurality of metal wiring layers toward the semiconductor substrate and penetrating through the semiconductor substrate. The semiconductor chip further includes a second through via structure bundle spaced apart from the first through via structure bundle, extending in the vertical direction from a second metal wiring layer of the plurality of metal wiring layers toward the semiconductor substrate, and penetrating through the semiconductor substrate.