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公开(公告)号：US20230109988A1
公开(公告)日：2023-04-13
申请号：US17862466
申请日：2022-07-12
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Youngwong JANG , Jeonghoon KIM , Shinichi IIZUKA , Jongok HA , Hyejin LEE
IPC: H03K17/687 , H02M3/07 , H03F3/24
Abstract: A power supply switch circuit includes a first switch configured to supply a first power supply voltage to a power supply terminal of a power amplifier, a control voltage generator configured to compare a first voltage of the power supply terminal with a predetermined first reference voltage to generate a first control voltage higher than the first power supply voltage, and a switch controller configured to use the first control voltage to generate a switching driving signal controlling the first switch.
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公开(公告)号：US20230011598A1
公开(公告)日：2023-01-12
申请号：US17836518
申请日：2022-06-09
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Youngwong JANG , Jeonghoon KIM , Shinichi IIZUKA , Jongok HA , Hyejin LEE
IPC: H03K17/687 , H03K19/17772 , H03K19/20 , H03F3/21
Abstract: A power supply switch circuit includes a first transistor that switches supplying of a first power supply voltage to a power supply terminal of a power amplifier, a switch controller that controls the first transistor and to which a second power supply voltage is applied, and a voltage selector that selects a higher voltage among the first power supply voltage and the second power supply voltage. The selected higher voltage is applied to a body terminal of the first transistor or a gate terminal of the first transistor.
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公开(公告)号：US20240120893A1
公开(公告)日：2024-04-11
申请号：US18376644
申请日：2023-10-04
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Jeonghoon KIM , Jongok HA , Youngwong JANG , Shinichi IIZUKA , Hyejin LEE
CPC classification number: H03F3/245 , H03F1/0222 , H03F2200/102 , H03F2200/451
Abstract: A power amplifier includes a power transistor configured to amplify an input radio-frequency (RF) signal, and a bias circuit configured to provide a bias current to the power transistor, and in a first power mode, detect a first signal corresponding to a first level or more in the input RF signal and generate the bias current corresponding to the first signal, or detect a second signal corresponding to a second level or less in the input RF signal and generate the bias current corresponding to the second signal, and in a second power mode, detect a third signal corresponding to a third level or more in the input RF signal and generate the bias current corresponding to the third signal, or detect a fourth signal corresponding to a fourth level or less in the input RF signal and generate the bias current corresponding to the fourth signal.
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公开(公告)号：US20230043939A1
公开(公告)日：2023-02-09
申请号：US17846554
申请日：2022-06-22
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Jeonghoon KIM , Jongok HA , Youngwong JANG , Shinichi IIZUKA , Hyejin LEE
Abstract: A power supply switch circuit includes a switch circuit including a first switch configured to switch a first power source voltage to a power supply terminal of a power amplifier, and a second switch configured to switch a second power source voltage to the power supply terminal; a switch controller configured to control the switch circuit; and a power supply circuit configured to supply a third power source voltage to the power supply terminal when a first voltage of the power supply terminal is lower than a predetermined second voltage.
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5.发明公开公开(公告)号：US20240213930A1
公开(公告)日：2024-06-27
申请号：US18216574
申请日：2023-06-29
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Youngwong JANG , Jeonghoon KIM , Shinichi IIZUKA , Jongok HA , Hyejin LEE
CPC classification number: H03F1/523 , H02H7/008 , H03F3/21 , H03F2200/451 , H03F2203/21127
Abstract: An overcurrent protection circuit includes a variable voltage source configured to generate a first voltage which that in response to a variable current; an amplifier comprising a first input terminal to which the first voltage is applied; and a limit current source connected to a second input terminal of the amplifier and configured to generate a limit current corresponding to the first voltage.
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Patent Agency Ranking
公开(公告)号：US20240195410A1
公开(公告)日：2024-06-13
申请号：US18310723
申请日：2023-05-02
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Jeonghoon KIM , Jongok HA , Youngwong JANG , Shinichi IIZUKA , Hyejin LEE
IPC: H03K17/687
CPC classification number: H03K17/6871 , H03K2217/0081
Abstract: A power supply switch circuit is disclosed. The power supply switch circuit includes a first switch configured to switch a supply of a first power supply voltage to a power supply terminal of a power amplifier; and a switch driving circuit including a first transistor configured to turn on the first switch, and a second transistor configured to turn off the first switch. The switch driving circuit may further include a first resistor that is positioned on a turn-on path formed between the first transistor and the first switch when the first transistor is turned on.
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公开(公告)号：US20230038876A1
公开(公告)日：2023-02-09
申请号：US17858643
申请日：2022-07-06
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Youngwong JANG , Jeonghoon KIM , Jongok HA , Shinichi IIZUKA , Hyejin LEE
IPC: H03K17/687 , H03K17/16 , H03K19/00 , H03K19/20
Abstract: A power source switch circuit and an operation method thereof are provided. The power source switch circuit may include a switch circuit that includes a first switch configured switch a supply of a voltage from a first power supply circuit to a power supply terminal of a power amplifier, and a second switch configured to switch a supply of a voltage from a second power supply circuit to the power supply terminal of the power amplifier; and a switch controller configured to control the switch circuit to set the first switch and the second switch in a turned-on state during a first period when the first switch is turned off and the second switch is turned on.
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公开(公告)号：US20240275380A1
公开(公告)日：2024-08-15
申请号：US18385451
申请日：2023-10-31
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Shinichi IIZUKA , Youngwong JANG , Jongok HA , Hyejin LEE , Jeonghoon KIM
IPC: H03K17/687 , H03F1/26 , H03F3/45 , H03K17/16
CPC classification number: H03K17/687 , H03F1/26 , H03F3/45475 , H03K17/162 , H03F2200/451
Abstract: A charge pump system includes a charge pump circuit including an input terminal configured to receive an input voltage and an output terminal configured to output an output voltage, and configured to convert the input voltage to the output voltage; a first resistor including one terminal connected to a reference voltage; a second resistor connected between another terminal of the first resistor and the charge pump circuit output terminal; a third resistor including one terminal connected to the reference voltage; a fourth resistor connected between another terminal of the third resistor and a ground; an amplifier including a first input terminal connected to the other terminal of the first resistor, a second input terminal connected to the other terminal of the third resistor; and a first transistor including a control terminal connected to an amplifier output terminal, and a first terminal connected to the charge pump circuit input terminal.
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公开(公告)号：US20240275342A1
公开(公告)日：2024-08-15
申请号：US18493045
申请日：2023-10-24
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Jongok HA , Jeonghoon KIM , Shinichi IIZUKA , Youngwong JANG , Hyejin LEE
CPC classification number: H03F3/245 , H03F1/0222 , H03F2200/102 , H03F2200/451
Abstract: An envelope tracking bias circuit that generates a bias current to a power amplifier that amplifies a radio frequency (RF) signal is provided. The envelope tracking bias circuit includes an envelope detector configured to detect an envelope signal of the RF signal; an envelope bandwidth detector configured to detect a frequency band of the envelope signal; and a bias output circuit that generates a bias current based on an average magnitude of the envelope signal when the frequency band of the envelope signal is greater than or equal to a predetermined frequency, and generates a bias current in response to the envelope signal when the frequency band of the envelope signal is lower than the predetermined frequency.
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公开(公告)号：US20240267004A1
公开(公告)日：2024-08-08
申请号：US18497004
申请日：2023-10-30
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Shinichi IIZUKA , Youngwong JANG , Jongok HA , Hyejin LEE , Jeonghoon KIM
CPC classification number: H03F1/0222 , H03F1/56 , H03F3/245 , H03F2200/451
Abstract: A power amplifier is provided. The power amplifier includes a power transistor configured to amplify and output an input radio frequency (RF) signal; a first transistor including a first terminal that provides a bias current to the power transistor; and a second transistor including a first terminal connected to a control terminal of the first transistor and a control terminal connected to the first terminal of the first transistor. Herein, the second transistor is configured to sink a first current from the control terminal of the first transistor when an output current of the power transistor exceeds a threshold value.
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