Invention Publication
- Patent Title: POWER AMPLIFIER
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Application No.: US18497004Application Date: 2023-10-30
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Publication No.: US20240267004A1Publication Date: 2024-08-08
- Inventor: Shinichi IIZUKA , Youngwong JANG , Jongok HA , Hyejin LEE , Jeonghoon KIM
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20230015110 2023.02.03
- Main IPC: H03F1/02
- IPC: H03F1/02 ; H03F1/56 ; H03F3/24

Abstract:
A power amplifier is provided. The power amplifier includes a power transistor configured to amplify and output an input radio frequency (RF) signal; a first transistor including a first terminal that provides a bias current to the power transistor; and a second transistor including a first terminal connected to a control terminal of the first transistor and a control terminal connected to the first terminal of the first transistor. Herein, the second transistor is configured to sink a first current from the control terminal of the first transistor when an output current of the power transistor exceeds a threshold value.
Information query
IPC分类: