Invention Publication
- Patent Title: POWER AMPLIFIER
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Application No.: US18376644Application Date: 2023-10-04
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Publication No.: US20240120893A1Publication Date: 2024-04-11
- Inventor: Jeonghoon KIM , Jongok HA , Youngwong JANG , Shinichi IIZUKA , Hyejin LEE
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20220128073 2022.10.06 KR 20230053468 2023.04.24
- Main IPC: H03F3/24
- IPC: H03F3/24 ; H03F1/02

Abstract:
A power amplifier includes a power transistor configured to amplify an input radio-frequency (RF) signal, and a bias circuit configured to provide a bias current to the power transistor, and in a first power mode, detect a first signal corresponding to a first level or more in the input RF signal and generate the bias current corresponding to the first signal, or detect a second signal corresponding to a second level or less in the input RF signal and generate the bias current corresponding to the second signal, and in a second power mode, detect a third signal corresponding to a third level or more in the input RF signal and generate the bias current corresponding to the third signal, or detect a fourth signal corresponding to a fourth level or less in the input RF signal and generate the bias current corresponding to the fourth signal.
Information query
IPC分类: