Test-device system for independent characterization of sensor-width and sensor-stripe-height definition processes
    1.
    发明授权
    Test-device system for independent characterization of sensor-width and sensor-stripe-height definition processes 有权
    用于传感器宽度和传感器条纹高度定义过程的独立表征的测试设备系统

    公开(公告)号:US07852072B2

    公开(公告)日:2010-12-14

    申请号:US12006323

    申请日:2007-12-31

    CPC classification number: G11B5/455

    Abstract: A test-device system and method for deconvoluting measurements of effects of a sensor-width definition process from measurements of effects of a sensor-stripe-height-definition process in a manufacture of a magnetic sensor. The test-device system comprises a first test device for generating data to characterize a sensor-width-definition process. The test-device system also comprises a second test device for generating data to characterize a sensor-stripe-height-definition process. The test-device system allows independent characterization of a sensor-width parameter and a sensor-stripe-height parameter.

    Abstract translation: 一种测试装置系统和方法,用于对传感器宽度定义处理的影响进行解卷积测量,所述测量来自传感器条纹高度清晰度过程在制造磁传感器中的影响。 测试设备系统包括用于产生数据以表征传感器宽度定义过程的第一测试设备。 测试设备系统还包括用于生成数据以表征传感器条纹高度清晰度过程的第二测试设备。 测试设备系统允许对传感器宽度参数和传感器条纹高度参数进行独立表征。

    Verification of a fabrication process used to form read elements in magnetic heads
    4.
    发明授权
    Verification of a fabrication process used to form read elements in magnetic heads 有权
    用于在磁头中形成读取元件的制造工艺的验证

    公开(公告)号:US07919967B2

    公开(公告)日:2011-04-05

    申请号:US11965502

    申请日:2007-12-27

    CPC classification number: G01R31/2884 G01R33/1207 G11B5/127

    Abstract: Test methods and components are disclosed for testing the quality of a fabrication process used to form read elements in magnetic heads. A wafer is populated with one or more test components along with magnetic heads. The test components are formed by the same or similar fabrication processes as the read elements, but do not include a conductive MR sensor between the test leads. By measuring the resistance of the test components, the formation of parasitic shunts can be identified in the test components, which may indicate the formation of parasitic shunts in the read elements. Thus, the quality of the fabrication process in forming read elements in magnetic head may be determined.

    Abstract translation: 公开了用于测试用于在磁头中形成读取元件的制造工艺的质量的测试方法和部件。 晶片与磁头一起安装有一个或多个测试部件。 测试部件通过与读取元件相同或相似的制造工艺形成,但不包括测试引线之间的导电MR传感器。 通过测量测试部件的电阻,可以在测试部件中识别寄生分流器的形成,这可以指示在读取元件中形成寄生分流。 因此,可以确定在磁头中形成读取元件的制造工艺的质量。

    Test components fabricated with large area sensors used for determining the resistance of an MR sensor
    5.
    发明授权
    Test components fabricated with large area sensors used for determining the resistance of an MR sensor 有权
    用大面积传感器制造的测试部件用于确定MR传感器的电阻

    公开(公告)号:US07855553B2

    公开(公告)日:2010-12-21

    申请号:US11965587

    申请日:2007-12-27

    Abstract: Test methods and components are disclosed for testing resistances of magnetoresistance (MR) sensors in read elements. Test components are fabricated on a wafer with a first test lead, a test MR sensor, and a second test lead. The test leads and test MR sensor are fabricated with similar processes as first shields, MR sensors, and second shields of read elements on tie wafer. However, the test MR sensor is fabricated with an area that is larger than areas of the MR sensors in the read elements. The larger area of the test MR sensor causes the resistance of the test MR sensor to be insignificant compared to the lead resistance. Thus, a resistance measurement of the test component represents the lead resistance of a read element. An accurate resistance measurement of an MR sensor in a read element may then be determined by subtracting the lead resistance.

    Abstract translation: 公开了用于测试读取元件中的磁阻(MR)传感器的电阻的测试方法和组件。 在具有第一测试导线,测试MR传感器和第二测试导线的晶片上制造测试部件。 测试引线和测试MR传感器采用与晶片上的读取元件的第一屏蔽,MR传感器和第二屏蔽类似的工艺制造。 然而,测试MR传感器的制造面积大于读取元件中MR传感器的面积。 测试MR传感器的较大面积导致测试MR传感器的电阻与引线电阻相比不显着。 因此,测试部件的电阻测量表示读取元件的引线电阻。 然后可以通过减去引线电阻来确定读取元件中的MR传感器的精确电阻测量。

    Electrical lapping guides made from tunneling magnetoresistive (TMR) material
    6.
    发明授权
    Electrical lapping guides made from tunneling magnetoresistive (TMR) material 失效
    由隧道磁阻(TMR)材料制成的电气研磨导轨

    公开(公告)号:US07564110B2

    公开(公告)日:2009-07-21

    申请号:US11379321

    申请日:2006-04-19

    Abstract: Tunneling magnetoresistive (TMR) electrical lapping guides (ELG) are disclosed for use in wafer fabrication of magnetic sensing devices, such as magnetic recording heads using TMR read elements. A TMR ELG includes a TMR stack comprising a first conductive layer, a barrier layer, and a second conductive layer of TMR material. The TMR ELG also includes a first lead and a second lead that connect to conductive pads used for applying a sense current to the TMR ELG in a current in plane (CIP) fashion. The first lead contacts one side of the TMR stack so that the first lead contacts both the first conductive layer and the second conductive layer of the TMR stack. The second lead contacts the other side of the TMR stack so that the second lead contacts both the first conductive layer and the second conductive layer of the TMR stack.

    Abstract translation: 公开了隧道磁阻(TMR)电研磨引导件(ELG),用于磁感测装置的晶片制造,例如使用TMR读取元件的磁记录头。 TMR ELG包括TMR堆叠,其包括第一导电层,阻挡层和TMR材料的第二导电层。 TMR ELG还包括连接到用于以当前平面(CIP)方式向TMR ELG施加感测电流的导电焊盘的第一引线和第二引线。 第一引线接触TMR堆叠的一侧,使得第一引线接触TMR堆叠的第一导电层和第二导电层。 第二引线接触TMR堆叠的另一侧,使得第二引线接触TMR堆叠的第一导电层和第二导电层。

    VERIFICATION OF A FABRICATION PROCESS USED TO FORM READ ELEMENTS IN MAGNETIC HEADS
    7.
    发明申请
    VERIFICATION OF A FABRICATION PROCESS USED TO FORM READ ELEMENTS IN MAGNETIC HEADS 有权
    用于形成读取磁头元件的制造工艺的验证

    公开(公告)号:US20090168214A1

    公开(公告)日:2009-07-02

    申请号:US11965502

    申请日:2007-12-27

    CPC classification number: G01R31/2884 G01R33/1207 G11B5/127

    Abstract: Test methods and components are disclosed for testing the quality of a fabrication process used to form read elements in magnetic heads. A wafer is populated with one or more test components along with magnetic heads. The test components are formed by the same or similar fabrication processes as the read elements, but do not include a conductive MR sensor between the test leads. By measuring the resistance of the test components, the formation of parasitic shunts can be identified in the test components, which may indicate the formation of parasitic shunts in the read elements. Thus, the quality of the fabrication process in forming read elements in magnetic head may be determined.

    Abstract translation: 公开了用于测试用于在磁头中形成读取元件的制造工艺的质量的测试方法和部件。 晶片与磁头一起安装有一个或多个测试部件。 测试部件通过与读取元件相同或相似的制造工艺形成,但不包括测试引线之间的导电MR传感器。 通过测量测试部件的电阻,可以在测试部件中识别寄生分流器的形成,这可以指示在读取元件中形成寄生分流。 因此,可以确定在磁头中形成读取元件的制造工艺的质量。

    Wafer level testing
    8.
    发明授权
    Wafer level testing 有权
    晶圆级测试

    公开(公告)号:US07999566B2

    公开(公告)日:2011-08-16

    申请号:US12006406

    申请日:2007-12-31

    Abstract: A wafer comprises a kerf region and a test chip. The kerf is a region in a wafer designated to be destroyed by chip dicing. The test chip is located within the kerf region and is configured to provide parametric data for a wafer fabrication process of a head. The test chip comprises a shield portion of a first shield layer electrically coupled to an element, a first pad within a second shield layer electrically coupled to the element, and a second pad within the second shield layer electrically coupled to the shield portion.

    Abstract translation: 晶片包括切口区域和测试芯片。 切屑是指定通过芯片切割破坏的晶片中的区域。 测试芯片位于切口区域内并且被配置为提供头部的晶片制造过程的参数数据。 测试芯片包括电耦合到元件的第一屏蔽层的屏蔽部分,电耦合到元件的第二屏蔽层内的第一焊盘以及电耦合到屏蔽部分的第二屏蔽层内的第二焊盘。

    Determination of magnetic read head properties
    9.
    发明授权
    Determination of magnetic read head properties 失效
    磁读头性能的测定

    公开(公告)号:US07564235B2

    公开(公告)日:2009-07-21

    申请号:US11464050

    申请日:2006-08-11

    CPC classification number: G01R33/093 B82Y25/00

    Abstract: A method, computer-readable medium, and apparatus for measuring properties of a magnetic read head are provided. In one embodiment, the method includes providing a first and a second magnetic read head. A first dimension of the first magnetic read head is different from a corresponding first dimension of the second magnetic read head. The method further includes determining a first change in conductance of the first magnetic read head resulting from an applied magnetic field and a second change in conductance of the second magnetic read head resulting from the applied magnetic field. The first change in conductance and the second change in conductance are used to determine a change in the first dimension and the corresponding first dimension of the first and second magnetic read heads, respectively. The change in the first dimension and the corresponding first dimension results from a manufacturing process of the first and second magnetic read heads.

    Abstract translation: 提供了一种用于测量磁读头的性质的方法,计算机可读介质和装置。 在一个实施例中,该方法包括提供第一和第二磁读头。 第一磁读头的第一尺寸不同于第二磁读头的对应第一尺寸。 该方法还包括确定由所施加的磁场产生的第一磁读取头的电导的第一变化和由所施加的磁场产生的第二磁读取头的电导的第二变化。 电导的第一变化和电导的第二变化用于分别确定第一和第二磁读头的第一维度和对应的第一维度的变化。 第一尺寸和对应的第一尺寸的变化来自第一和第二磁读头的制造过程。

    TEST COMPONENTS FABRICATED WITH PSEUDO SENSORS USED FOR DETERMINING THE RESISTANCE OF AN MR SENSOR
    10.
    发明申请
    TEST COMPONENTS FABRICATED WITH PSEUDO SENSORS USED FOR DETERMINING THE RESISTANCE OF AN MR SENSOR 有权
    用于确定MR传感器电阻的PSEUDO传感器的测试组件

    公开(公告)号:US20090168216A1

    公开(公告)日:2009-07-02

    申请号:US11965612

    申请日:2007-12-27

    CPC classification number: G11B5/3173 G11B5/3166 G11B5/3193 G11B5/3903

    Abstract: Test methods and components are disclosed for testing resistances of magnetoresistance (MR) sensors in read elements. Test components are fabricated on a wafer with a first test lead, a pseudo sensor, and a second test lead. The test leads and MR sensor are fabricated with similar processes as first shields, MR sensors, and second shields of read elements on the wafer. However, the pseudo sensor in the test component is fabricated with lead material (or another material having similar resistance properties) instead of an MR thin-film structure like an MR sensor. Forming the pseudo sensor from lead material causes the resistance of the pseudo sensor to be insignificant compared to the lead resistance. Thus, a resistance measurement of the test component represents the lead resistance of a read element. An accurate resistance measurement of an MR sensor in a read element may then be determined by subtracting the lead resistance.

    Abstract translation: 公开了用于测试读取元件中的磁阻(MR)传感器的电阻的测试方法和组件。 在具有第一测试导线,伪传感器和第二测试导线的晶片上制造测试部件。 测试引线和MR传感器采用与晶片上的读取元件的第一屏蔽,MR传感器和第二屏蔽件类似的工艺制造。 然而,测试部件中的伪传感器用诸如MR传感器的MR薄膜结构的铅材料(或具有相似电阻特性的另一种材料)代替。 从铅材料形成伪传感器导致伪传感器的电阻与引线电阻相比不显着。 因此,测试部件的电阻测量表示读取元件的引线电阻。 然后可以通过减去引线电阻来确定读取元件中的MR传感器的精确电阻测量。

Patent Agency Ranking