公开(公告)号：US06936816B2

公开(公告)日：2005-08-30

申请号：US10833611

申请日：2004-04-28

Applicant: Marian Mankos ,  David A. Soltz ,  Harald F. Hess

Inventor： Marian Mankos ,  David A. Soltz ,  Harald F. Hess

IPC: G01N23/20 ,  G01N23/22 ,  G01N23/225 ,  G01Q30/02 ,  G01Q30/04 ,  G01Q70/00 ,  G11B5/012 ,  G11B5/09 ,  G11B5/127 ,  G11B5/31 ,  G11B5/455 ,  G11B9/10

CPC classification number: G01N23/20 ,  G01N23/22 ,  G01N23/225 ,  G01N23/2251 ,  G11B5/012 ,  G11B5/09 ,  G11B5/1272 ,  G11B5/3166 ,  G11B5/3193 ,  G11B5/455

Abstract: One embodiment disclosed relates to a method for inspecting or reviewing a magnetized specimen using an automated inspection apparatus. The method includes generating a beam of incident electrons using an electron source, biasing the specimen with respect to the electron source such that the incident electrons decelerate as a surface of the specimen is approached, and illuminating a portion of the specimen at a tilt with the beam of incident electrons. The specimen is moved under the incident beam of electrons using a movable stage of the inspection apparatus. Scattered electrons are detected to form image data of the specimen showing distinct contrast between regions of different magnetization. The movement of the specimen under the beam of incident electrons may be continuous, and data for multiple image pixels may be acquired in parallel using a time delay integrating detector.

Abstract translation: 所公开的一个实施例涉及使用自动检查装置检查或检查磁化试样的方法。 该方法包括使用电子源产生入射电子束，使样本相对于电子源偏置，使得入射的电子随着试样的表面而减速，并且以一定的倾斜度照射一部分试样 入射电子束。 使用检查装置的可移动台，使试样在电子的入射光束下移动。 检测到分散的电子以形成不同磁化强度的区域之间显示不同对比度的样本的图像数据。 在入射电子束下的样本的移动可以是连续的，并且可以使用时间延迟积分检测器并行获取多个图像像素的数据。

公开(公告)号：US08615868B2

公开(公告)日：2013-12-31

申请号：US13306887

申请日：2011-11-29

Applicant: Yongchul Ahn ,  Xiaozhong Dang ,  Quang Le ,  Simon H. Liao

Inventor： Yongchul Ahn ,  Xiaozhong Dang ,  Quang Le ,  Simon H. Liao

IPC: G11B5/127 ,  H04R31/00

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3193 ,  G11B5/398 ,  G11B2005/3996 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: A method for manufacturing a magnetic sensor that includes depositing a plurality of mask layers, then forming a stripe height defining mask over the sensor layers. A first ion milling is performed just sufficiently to remove portions of the free layer that are not protected by the stripe height defining mask, the first ion milling being terminated at the non-magnetic barrier or spacer layer. A dielectric layer is then deposited, preferably by ion beam deposition. A second ion milling is then performed to remove portions of the pinned layer structure that are not protected by the mask, the free layer being protected during the second ion milling by the dielectric layer.

Abstract translation: 一种用于制造磁传感器的方法，包括沉积多个掩模层，然后在传感器层上形成条纹高度限定掩模。 执行第一离子铣削足以除去未被条形高度限定掩模保护的自由层的部分，第一离子铣削在非磁性阻挡层或间隔层处终止。 然后优选通过离子束沉积沉积介电层。 然后执行第二离子铣削以去除未被掩模保护的钉扎层结构的部分，在通过介电层进行第二离子铣削期间保护自由层。

公开(公告)号：US07855553B2

公开(公告)日：2010-12-21

申请号：US11965587

申请日：2007-12-27

Applicant: Robert S. Beach ,  Mary K. Gutberlet ,  David J. Seagle

Inventor： Robert S. Beach ,  Mary K. Gutberlet ,  David J. Seagle

IPC: G01R33/12

CPC classification number: G11B20/1816 ,  G11B5/3166 ,  G11B5/3173 ,  G11B5/3193 ,  G11B5/3903 ,  G11B2220/2516

Abstract: Test methods and components are disclosed for testing resistances of magnetoresistance (MR) sensors in read elements. Test components are fabricated on a wafer with a first test lead, a test MR sensor, and a second test lead. The test leads and test MR sensor are fabricated with similar processes as first shields, MR sensors, and second shields of read elements on tie wafer. However, the test MR sensor is fabricated with an area that is larger than areas of the MR sensors in the read elements. The larger area of the test MR sensor causes the resistance of the test MR sensor to be insignificant compared to the lead resistance. Thus, a resistance measurement of the test component represents the lead resistance of a read element. An accurate resistance measurement of an MR sensor in a read element may then be determined by subtracting the lead resistance.

Abstract translation: 公开了用于测试读取元件中的磁阻（MR）传感器的电阻的测试方法和组件。 在具有第一测试导线，测试MR传感器和第二测试导线的晶片上制造测试部件。 测试引线和测试MR传感器采用与晶片上的读取元件的第一屏蔽，MR传感器和第二屏蔽类似的工艺制造。 然而，测试MR传感器的制造面积大于读取元件中MR传感器的面积。 测试MR传感器的较大面积导致测试MR传感器的电阻与引线电阻相比不显着。 因此，测试部件的电阻测量表示读取元件的引线电阻。 然后可以通过减去引线电阻来确定读取元件中的MR传感器的精确电阻测量。

公开(公告)号：US07892442B2

公开(公告)日：2011-02-22

申请号：US11683611

申请日：2007-03-08

Applicant: Hiroo Sawada ,  Jun Shouji ,  Mitsuhiro Kitao ,  Eiji Yamada

Inventor： Hiroo Sawada ,  Jun Shouji ,  Mitsuhiro Kitao ,  Eiji Yamada

IPC: B44C1/22

CPC classification number: G11B5/3116 ,  G11B5/3163 ,  G11B5/3193

Abstract: A method of manufacturing a thin-film magnetic head works a part to be worked to a target length by carrying out an etching process on an object to be worked using an etching apparatus. The method carries out a measuring process that measures a length before working of a part to be worked using a measuring apparatus and a calculation process that calculates the processing time of the etching process required to work the part to be worked from the length before working to the target length based on a first calculation result correcting parameter obtained in advance corresponding to the measuring apparatus, a second calculation result correcting parameter obtained in advance corresponding to a position of the part to be worked, a third calculation result correcting parameter obtained in advance corresponding to a value of a current supplied to an electrode of the etching apparatus during the etching process, a fourth calculation result correcting parameter obtained in advance corresponding to a total usage time of the electrode, the length before working, and the target length. The etching process is carried out on the object to be worked for the calculated processing time.

Abstract translation: 制造薄膜磁头的方法通过使用蚀刻装置对待加工物体进行蚀刻处理，将要加工的部分加工成目标长度。 该方法执行测量过程，该测量过程使用测量装置测量待加工零件的工作长度，以及计算过程，该计算过程计算从工作前的工作期间将待加工零件所需的蚀刻工艺的处理时间从 基于与测量装置相对应地预先获得的第一计算结果校正参数的目标长度，对应于待加工部位的位置预先获得的第二计算结果校正参数，预先获得的第三计算结果校正参数 相对于在蚀刻处理期间提供给蚀刻装置的电极的电流的值，对应于电极的总使用时间，加工前的长度和目标长度，预先获得的第四计算结果校正参数。 在计算出的处理时间内对被加工物进行蚀刻处理。

公开(公告)号：US20090168216A1

公开(公告)日：2009-07-02

申请号：US11965612

申请日：2007-12-27

Applicant: Robert S. Beach ,  Mary K. Gutberlet ,  David J. Seagle

Inventor： Robert S. Beach ,  Mary K. Gutberlet ,  David J. Seagle

IPC: G11B27/36

CPC classification number: G11B5/3173 ,  G11B5/3166 ,  G11B5/3193 ,  G11B5/3903

Abstract: Test methods and components are disclosed for testing resistances of magnetoresistance (MR) sensors in read elements. Test components are fabricated on a wafer with a first test lead, a pseudo sensor, and a second test lead. The test leads and MR sensor are fabricated with similar processes as first shields, MR sensors, and second shields of read elements on the wafer. However, the pseudo sensor in the test component is fabricated with lead material (or another material having similar resistance properties) instead of an MR thin-film structure like an MR sensor. Forming the pseudo sensor from lead material causes the resistance of the pseudo sensor to be insignificant compared to the lead resistance. Thus, a resistance measurement of the test component represents the lead resistance of a read element. An accurate resistance measurement of an MR sensor in a read element may then be determined by subtracting the lead resistance.

Abstract translation: 公开了用于测试读取元件中的磁阻（MR）传感器的电阻的测试方法和组件。 在具有第一测试导线，伪传感器和第二测试导线的晶片上制造测试部件。 测试引线和MR传感器采用与晶片上的读取元件的第一屏蔽，MR传感器和第二屏蔽件类似的工艺制造。 然而，测试部件中的伪传感器用诸如MR传感器的MR薄膜结构的铅材料（或具有相似电阻特性的另一种材料）代替。 从铅材料形成伪传感器导致伪传感器的电阻与引线电阻相比不显着。 因此，测试部件的电阻测量表示读取元件的引线电阻。 然后可以通过减去引线电阻来确定读取元件中的MR传感器的精确电阻测量。

公开(公告)号：US20040200960A1

公开(公告)日：2004-10-14

申请号：US10833611

申请日：2004-04-28

Inventor： Marian Mankos ,  David A. Soltz ,  Harald F. Hess

IPC: H01J037/256

CPC classification number: G01N23/20 ,  G01N23/22 ,  G01N23/225 ,  G01N23/2251 ,  G11B5/012 ,  G11B5/09 ,  G11B5/1272 ,  G11B5/3166 ,  G11B5/3193 ,  G11B5/455

Abstract: One embodiment disclosed relates to a method for inspecting or reviewing a magnetized specimen using an automated inspection apparatus. The method includes generating a beam of incident electrons using an electron source, biasing the specimen with respect to the electron source such that the incident electrons decelerate as a surface of the specimen is approached, and illuminating a portion of the specimen at a tilt with the beam of incident electrons. The specimen is moved under the incident beam of electrons using a movable stage of the inspection apparatus. Scattered electrons are detected to form image data of the specimen showing distinct contrast between regions of different magnetization. The movement of the specimen under the beam of incident electrons may be continuous, and data for multiple image pixels may be acquired in parallel using a time delay integrating detector.

Abstract translation: 所公开的一个实施例涉及使用自动检查装置检查或检查磁化试样的方法。 该方法包括使用电子源产生入射电子束，使样本相对于电子源偏置，使得入射的电子随着试样的表面而减速，并且以一定的倾斜度照射一部分试样 入射电子束。 使用检查装置的可移动台，使试样在电子的入射光束下移动。 检测到分散的电子以形成不同磁化强度的区域之间显示不同对比度的样本的图像数据。 在入射电子束下的样本的移动可以是连续的，并且可以使用时间延迟积分检测器并行获取多个图像像素的数据。

公开(公告)号：US08082658B2

公开(公告)日：2011-12-27

申请号：US12036478

申请日：2008-02-25

Applicant: Thomas D. Boone, Jr. ,  Glenn P. Gee ,  Paul A. Goddu ,  John P. Herber ,  Hicham M. Sougrati ,  Huey-Ming Tzeng

Inventor： Thomas D. Boone, Jr. ,  Glenn P. Gee ,  Paul A. Goddu ,  John P. Herber ,  Hicham M. Sougrati ,  Huey-Ming Tzeng

IPC: H04R31/00

CPC classification number: B24B37/042 ,  B24B49/04 ,  B24B49/10 ,  G11B5/3169 ,  G11B5/3173 ,  G11B5/3193 ,  Y10T29/49032 ,  Y10T29/49036 ,  Y10T29/49037 ,  Y10T29/49041 ,  Y10T29/49046

Abstract: Methods of lapping rows of recording heads are described after an air bearing surface (ABS) damascene process is performed. The ABS damascene process uses a selective etching process to form voids in the row of recording heads where conductive material forms a feature in the recording head, such as a wrap around shield. The conductive material is then deposited on the ABS of the row to fill the voids, and the row is lapped. According to methods provided herein, the resistance of one or more lapping guides in the row of recording heads is monitored to determine when the conductive material is removed by the lapping process. When the monitored resistance indicates that the conductive material is removed, the lapping process is stopped. The resistance across one or more lapping guides may also be used to control the lapping process to uniformly lap the conductive material from the ABS.

Abstract translation: 在执行空气轴承表面（ABS）镶嵌工艺之后描述研磨记录头行的方法。 ABS镶嵌工艺使用选择性蚀刻工艺在记录头的行中形成空隙，其中导电材料在记录头中形成特征，例如环绕护罩。 然后将导电材料沉积在该行的ABS上以填充空隙，并且研磨该列。 根据本文提供的方法，监测记录头行中的一个或多个研磨引导件的电阻，以确定通过研磨过程去除导电材料的时间。 当被监测的电阻表示导电材料被去除时，研磨过程停止。 跨越一个或多个研磨引导件的电阻也可用于控制研磨过程以均匀地从ABS吸收导电材料。

公开(公告)号：US07932717B2

公开(公告)日：2011-04-26

申请号：US11965612

申请日：2007-12-27

Applicant: Robert S. Beach ,  Mary K. Gutberlet ,  David J. Seagle

Inventor： Robert S. Beach ,  Mary K. Gutberlet ,  David J. Seagle

IPC: G01R33/12

CPC classification number: G11B5/3173 ,  G11B5/3166 ,  G11B5/3193 ,  G11B5/3903

Abstract: Test methods and components are disclosed for testing resistances of magnetoresistance (MR) sensors in read elements. Test components are fabricated on a wafer with a first test lead, a pseudo sensor, and a second test lead. The test leads and MR sensor are fabricated with similar processes as first shields, MR sensors, and second shields of read elements on the wafer. However, the pseudo sensor in the test component is fabricated with lead material (or another material having similar resistance properties) instead of an MR thin-film structure like an MR sensor. Forming the pseudo sensor from lead material causes the resistance of the pseudo sensor to be insignificant compared to the lead resistance. Thus, a resistance measurement of the test component represents the lead resistance of a read element. An accurate resistance measurement of an MR sensor in a read element may then be determined by subtracting the lead resistance.

Abstract translation: 公开了用于测试读取元件中的磁阻（MR）传感器的电阻的测试方法和组件。 在具有第一测试导线，伪传感器和第二测试导线的晶片上制造测试部件。 测试引线和MR传感器采用与晶片上的读取元件的第一屏蔽，MR传感器和第二屏蔽件类似的工艺制造。 然而，测试部件中的伪传感器用诸如MR传感器的MR薄膜结构的铅材料（或具有相似电阻特性的另一种材料）代替。 从铅材料形成伪传感器导致伪传感器的电阻与引线电阻相比不显着。 因此，测试部件的电阻测量表示读取元件的引线电阻。 然后可以通过减去引线电阻来确定读取元件中的MR传感器的精确电阻测量。

公开(公告)号：US20090168215A1

公开(公告)日：2009-07-02

申请号：US11965587

申请日：2007-12-27

Applicant: Robert S. Beach ,  Mary K. Gutberlet ,  David J. Seagle

Inventor： Robert S. Beach ,  Mary K. Gutberlet ,  David J. Seagle

IPC: G11B27/36

CPC classification number: G11B20/1816 ,  G11B5/3166 ,  G11B5/3173 ,  G11B5/3193 ,  G11B5/3903 ,  G11B2220/2516

Abstract: Test methods and components are disclosed for testing resistances of magnetoresistance (MR) sensors in read elements. Test components are fabricated on a wafer with a first test lead, a test MR sensor, and a second test lead. The test leads and test MR sensor are fabricated with similar processes as first shields, MR sensors, and second shields of read elements on tie wafer. However, the test MR sensor is fabricated with an area that is larger than areas of the MR sensors in the read elements. The larger area of the test MR sensor causes the resistance of the test MR sensor to be insignificant compared to the lead resistance. Thus, a resistance measurement of the test component represents the lead resistance of a read element. An accurate resistance measurement of an MR sensor in a read element may then be determined by subtracting the lead resistance.

Abstract translation: 公开了用于测试读取元件中的磁阻（MR）传感器的电阻的测试方法和组件。 在具有第一测试导线，测试MR传感器和第二测试导线的晶片上制造测试部件。 测试引线和测试MR传感器采用与晶片上的读取元件的第一屏蔽，MR传感器和第二屏蔽类似的工艺制造。 然而，测试MR传感器的制造面积大于读取元件中MR传感器的面积。 测试MR传感器的较大面积导致测试MR传感器的电阻与引线电阻相比不显着。 因此，测试部件的电阻测量表示读取元件的引线电阻。 然后可以通过减去引线电阻来确定读取元件中的MR传感器的精确电阻测量。

公开(公告)号：US20080218902A1

公开(公告)日：2008-09-11

申请号：US12036716

申请日：2008-02-25

Applicant: Kazumasa Hosono ,  Yukinori Ikegawa ,  Masaya Kato ,  Masashi Yanagawa ,  Kaoru Yamakawa ,  Takashi Ito

Inventor： Kazumasa Hosono ,  Yukinori Ikegawa ,  Masaya Kato ,  Masashi Yanagawa ,  Kaoru Yamakawa ,  Takashi Ito

IPC: G11B5/127

CPC classification number: G11B5/3133 ,  G11B5/1278 ,  G11B5/3163 ,  G11B5/3193

Abstract: A magnetic head has a main magnetic pole made of at least a magnetic material and a coil. The main magnetic pole has a stop layer through an inorganic insulating layer on both sides of the main magnetic pole in the widthwise direction. The boundary between the main magnetic pole and the metal layer becomes clear by the intervention of the inorganic insulating layer when viewing the flattened pattern plane by a scanning electron microscope and measuring the width of the main magnetic pole as a core width. The measurement accuracy of the main magnetic pole width can be improved and reductions in manufacturing yield rates which occur due to measurement errors can be prevented.

Abstract translation: 磁头具有由至少磁性材料和线圈制成的主磁极。 主磁极在宽度方向上通过主磁极两侧的无机绝缘层具有停止层。 通过扫描电子显微镜观察平坦化图案平面并测量主磁极的宽度作为芯宽度时，通过无机绝缘层的介入，主磁极和金属层之间的边界变得清晰。 可以提高主磁极宽度的测量精度，并且可以防止由测量误差引起的制造成品率的降低。