MICROMECHANICAL SENSOR THAT INCLUDES A STRESS DECOUPLING STRUCTURE

    公开(公告)号:US20200048072A1

    公开(公告)日:2020-02-13

    申请号:US16340770

    申请日:2017-09-25

    Abstract: A micromechanical sensor is described that includes: a substrate; a first functional layer that is situated on the substrate; a second functional layer that is situated on the first functional layer and that includes movable micromechanical structures; a cavity in the substrate that is situated below the movable mechanical structures; and a vertical trench structure that surrounds the movable micromechanical structures of the second functional layer and extends into the substrate down to the cavity.

    Method for Producing an Integrated Micromechanical Fluid Sensor Component, Integrated Micromechanical Fluid Sensor Component and Method for Detecting a Fluid by Means of an Integrated Micromechanical Fluid Sensor Component
    2.
    发明申请
    Method for Producing an Integrated Micromechanical Fluid Sensor Component, Integrated Micromechanical Fluid Sensor Component and Method for Detecting a Fluid by Means of an Integrated Micromechanical Fluid Sensor Component 有权
    集成微机电流体传感器部件的集成微机械流体传感器部件的方法和通过集成微机械流体传感器部件检测流体的方法

    公开(公告)号:US20160334329A1

    公开(公告)日:2016-11-17

    申请号:US15112163

    申请日:2014-11-21

    Abstract: A method for producing an integrated micromechanical fluid sensor component includes forming a first wafer with a first Bragg reflector and with a light-emitting device on a first substrate. The light-emitting device is configured to emit light rays in an emission direction from a surface of the light-emitting device facing away from the first Bragg reflector. The method further includes forming a second wafer with a second Bragg reflector and with a photodiode on a second substrate. The photodiode is arranged on a surface of the second Bragg reflector facing towards the second substrate. The method also includes bonding or gluing the first wafer to the second wafer such that there is formed a cavity into which a fluid is introduced and through which the light rays can pass. The method further includes separating the fluid sensor component from the first and the second wafer.

    Abstract translation: 一种用于制造集成的微机械流体传感器部件的方法包括:在第一基板上形成具有第一布拉格反射器的第一晶片和发光器件。 发光装置被配置为从发光装置的远离第一布拉格反射器的表面沿发射方向发射光线。 该方法还包括用第二布拉格反射器和在第二衬底上的光电二极管形成第二晶片。 光电二极管布置在第二布拉格反射器面向第二基板的表面上。 该方法还包括将第一晶片接合或胶合到第二晶片,使得形成空腔,流体被引入到其中,光线可以通过该空腔通过。 该方法还包括从第一和第二晶片分离流体传感器部件。

    Micromechanical sensor that includes a stress decoupling structure

    公开(公告)号:US10954120B2

    公开(公告)日:2021-03-23

    申请号:US16340770

    申请日:2017-09-25

    Abstract: A micromechanical sensor is described that includes: a substrate; a first functional layer that is situated on the substrate; a second functional layer that is situated on the first functional layer and that includes movable micromechanical structures; a cavity in the substrate that is situated below the movable mechanical structures; and a vertical trench structure that surrounds the movable micromechanical structures of the second functional layer and extends into the substrate down to the cavity.

    Micromechanical electric field meter as a thunderstorm warning device

    公开(公告)号:US09632123B2

    公开(公告)日:2017-04-25

    申请号:US14100844

    申请日:2013-12-09

    CPC classification number: G01R29/12 G01W1/16

    Abstract: A micromechanical structure, in particular a micromechanical electric field meter as a thunderstorm warning device, for detection of an electric field, comprising a substrate having a principal extension plane, a first electrode, a second electrode, and a drive assemblage for producing a relative motion of the second electrode with respect to the first electrode into an overlapping position, the first electrode and the second electrode being, in the overlapping position, disposed above one another in a projection direction extending perpendicularly to the principal extension plane of the substrate, wherein the second electrode has a defined potential for shielding the first electrode with respect to the electric field in the overlapping position.

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