摘要:
Disclosed is a surface-emitting laser element including a semiconductor substrate and plural surface-emitting lasers configured to emit light mutually different wavelengths, each surface-emitting laser including a lower Bragg reflector provided on the semiconductor substrate, a resonator provided on the lower Bragg reflector, an upper Bragg reflector provided on the resonator, and a wavelength adjustment layer provided in the upper Bragg reflector or lower Bragg reflector, the wavelength adjustment layers included in the surface-emitting lasers having mutually different thicknesses, at least one of the wavelength adjustment layers including adjustment layers made of two kinds of materials, and numbers of the adjustment layers included in the wavelength adjustment layers being mutually different.
摘要:
A compound-semiconductor photovoltaic cell includes a first photoelectric conversion cell made of a first compound-semiconductor material which lattice matches with GaAs or Ge; a first tunnel junction layer arranged on a deep side farther than the first photoelectric conversion cell in a light incident direction, and including a first p-type (Alx1Ga1-x1)y1In1-y1As (0≤x1
摘要:
A concentrator photovoltaic cell includes a light condenser element configured to condense light, a first photoelectric conversion cell configured to perform a photoelectric conversion, a second photoelectric conversion cell configured to perform a photoelectric conversion, a first output circuit configured to output a first output current which is output by the first photoelectric conversion cell, and a second output circuit configured to output a second output current which is output by the second photoelectric conversion cell.
摘要:
A reflector includes a low refractive index layer and a high refractive index layer. The low refractive index layer has a first average refractive index and has a laminated structure in which an AlN layer and a GaN layer are alternately laminated. The high refractive index layer has a second average refractive index higher than the first average refractive index and includes an InGaN layer.