- 专利标题： Compound-semiconductor photovoltaic cell and manufacturing method of compound-semiconductor photovoltaic cell
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申请号： US15309067申请日： 2015-07-08
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公开(公告)号： US11527666B2公开(公告)日： 2022-12-13
- 发明人: Shunichi Sato
- 申请人： RICOH COMPANY, LTD.
- 申请人地址： JP Tokyo
- 专利权人： RICOH COMPANY, LTD.
- 当前专利权人： RICOH COMPANY, LTD.
- 当前专利权人地址： JP Tokyo
- 代理机构： Xsensus LLP
- 优先权： JPJP2014-142826 20140711,JPJP2015-122272 20150617
- 国际申请： PCT/JP2015/003451 WO 20150708
- 国际公布： WO2016/006247 WO 20160114
- 主分类号： H01L31/0687
- IPC分类号： H01L31/0687 ; H01L31/0693 ; H01L31/0304 ; H01L31/18 ; H01L27/30 ; H01L31/0725 ; H01L21/02
摘要：
A compound-semiconductor photovoltaic cell includes a first photoelectric conversion cell made of a first compound-semiconductor material which lattice matches with GaAs or Ge; a first tunnel junction layer arranged on a deep side farther than the first photoelectric conversion cell in a light incident direction, and including a first p-type (Alx1Ga1-x1)y1In1-y1As (0≤x1
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