公开(公告)号：US09293457B2

公开(公告)日：2016-03-22

申请号：US14800207

申请日：2015-07-15

Applicant: Renesas Electronics Corporation

Inventor： Hideaki Tsuchiya ,  Hiroshi Kimura ,  Takashi Ide ,  Yorinobu Kunimune

IPC: H01L27/088 ,  H01L27/06 ,  H01L29/20 ,  H01L23/528 ,  H01L29/417 ,  H01L29/45 ,  H01L23/532

CPC classification number: H01L29/7787 ,  H01L23/528 ,  H01L23/53223 ,  H01L27/0605 ,  H01L27/088 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To enhance electromigration resistance of an electrode.A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).

Abstract translation: 提高电极的电迁移率。 漏电极部分地形成在漏极焊盘的侧表面上。 在这种情况下，漏电极与漏极焊盘集成，并且在漏极焊盘的侧表面沿着第一方向（y方向）延伸。 凹部在平面图中位于与漏电极重叠的区域中。 漏电极的至少一部分被埋在凹部中。 面向排水垫的凹部的侧面在第一方向（y方向）上进入排水垫。

公开(公告)号：US10566183B2

公开(公告)日：2020-02-18

申请号：US16052929

申请日：2018-08-02

Applicant: Renesas Electronics Corporation

Inventor： Yasuhiro Okamoto ,  Takashi Ide

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/778 ,  H01L29/51 ,  H01L29/417 ,  H01L29/423 ,  H01L29/43 ,  H01L29/20

Abstract: Characteristics of a semiconductor device are improved. A method of manufacturing a semiconductor device of the invention includes a step of forming a gate insulating film over a nitride semiconductor layer. The step includes steps of forming a crystalline Al2O3 film on the nitride semiconductor layer, forming a SiO2 film on the Al2O3 film, and forming an amorphous Al2O3 film on the SiO2 film. The step further includes steps of performing heat treatment on the amorphous Al2O3 to crystallize the amorphous Al2O3, thereby forming a crystalline Al2O3 film, and forming a SiO2 film on the crystalline Al2O3 film. In this way, since a film stack, which is formed by alternately stacking the crystalline Al2O3 films and the SiO2 films from a bottom side, is used as the gate insulating film, threshold voltage can be cumulatively increased.

公开(公告)号：US09722066B2

公开(公告)日：2017-08-01

申请号：US15055604

申请日：2016-02-28

Applicant: Renesas Electronics Corporation

Inventor： Hideaki Tsuchiya ,  Hiroshi Kimura ,  Takashi Ide ,  Yorinobu Kunimune

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L29/20 ,  H01L23/528 ,  H01L23/532 ,  H01L27/06 ,  H01L27/088 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L29/7787 ,  H01L23/528 ,  H01L23/53223 ,  H01L27/0605 ,  H01L27/088 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To enhance electromigration resistance of an electrode.A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).

公开(公告)号：US20160181411A1

公开(公告)日：2016-06-23

申请号：US15055604

申请日：2016-02-28

Applicant: Renesas Electronics Corporation

Inventor： Hideaki Tsuchiya ,  Hiroshi Kimura ,  Takashi Ide ,  Yorinobu Kunimune

IPC: H01L29/778 ,  H01L29/45 ,  H01L29/417 ,  H01L29/20

CPC classification number: H01L29/7787 ,  H01L23/528 ,  H01L23/53223 ,  H01L27/0605 ,  H01L27/088 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To enhance electromigration resistance of an electrode.A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).

Abstract translation: 提高电极的电迁移率。 漏电极部分地形成在漏极焊盘的侧表面上。 在这种情况下，漏电极与漏极焊盘集成，并且在漏极焊盘的侧表面沿着第一方向（y方向）延伸。 凹部在平面图中位于与漏电极重叠的区域中。 漏电极的至少一部分被埋在凹部中。 面向排水垫的凹部的侧面在第一方向（y方向）上进入排水垫。

公开(公告)号：US10074740B2

公开(公告)日：2018-09-11

申请号：US15642299

申请日：2017-07-05

Applicant: Renesas Electronics Corporation

Inventor： Hideaki Tsuchiya ,  Hiroshi Kimura ,  Takashi Ide ,  Yorinobu Kunimune

IPC: H01L29/778 ,  H01L23/528 ,  H01L23/532 ,  H01L27/088 ,  H01L29/417 ,  H01L27/06 ,  H01L29/45 ,  H01L29/66 ,  H01L29/20 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L29/7787 ,  H01L23/528 ,  H01L23/53223 ,  H01L27/0605 ,  H01L27/088 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To enhance electromigration resistance of an electrode.A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).

公开(公告)号：US20160020207A1

公开(公告)日：2016-01-21

申请号：US14800207

申请日：2015-07-15

Applicant: Renesas Electronics Corporation

Inventor： Hideaki Tsuchiya ,  Hiroshi Kimura ,  Takashi Ide ,  Yorinobu Kunimune

IPC: H01L27/088 ,  H01L29/20 ,  H01L23/532 ,  H01L29/417 ,  H01L29/45 ,  H01L27/06 ,  H01L23/528

CPC classification number: H01L29/7787 ,  H01L23/528 ,  H01L23/53223 ,  H01L27/0605 ,  H01L27/088 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To enhance electromigration resistance of an electrode.A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).

公开(公告)号：US20170301782A1

公开(公告)日：2017-10-19

申请号：US15642299

申请日：2017-07-05

Applicant: Renesas Electronics Corporation

Inventor： Hideaki Tsuchiya ,  Hiroshi Kimura ,  Takashi Ide ,  Yorinobu Kunimune

IPC: H01L29/778 ,  H01L23/532 ,  H01L27/06 ,  H01L29/66 ,  H01L29/417 ,  H01L23/528 ,  H01L29/20 ,  H01L27/088 ,  H01L29/45 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L29/7787 ,  H01L23/528 ,  H01L23/53223 ,  H01L27/0605 ,  H01L27/088 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: To enhance electromigration resistance of an electrode.A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).