Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15642299Application Date: 2017-07-05
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Publication No.: US10074740B2Publication Date: 2018-09-11
- Inventor: Hideaki Tsuchiya , Hiroshi Kimura , Takashi Ide , Yorinobu Kunimune
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2014-145372 20140715
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L23/528 ; H01L23/532 ; H01L27/088 ; H01L29/417 ; H01L27/06 ; H01L29/45 ; H01L29/66 ; H01L29/20 ; H01L29/40 ; H01L29/423

Abstract:
To enhance electromigration resistance of an electrode.A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).
Public/Granted literature
- US20170301782A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-10-19
Information query
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