Invention Grant
US09293457B2 Semiconductor device 有权
半导体器件

Semiconductor device
Abstract:
To enhance electromigration resistance of an electrode.A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).
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