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    Semiconductor device and manufacturing method thereof
    6.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US09076857B2

    公开(公告)日：2015-07-07

    申请号：US13740783

    申请日：2013-01-14

    申请人： Renesas Electronics Corporation

    发明人： Takahiro Tomimatsu

    IPC分类号： H01L29/51 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/28

    CPC分类号： H01L29/513 ,  H01L21/28185 ,  H01L21/823857 ,  H01L29/518 ,  H01L29/66477 ,  H01L29/66545 ,  H01L29/78

    摘要： Over a semiconductor substrate, a gate insulating film including an interfacial layer, a HfON film, and a HfSiON film is formed. Then, over the HfSiON film, an Al-containing film and a mask layer are formed. Subsequently, the mask layer and the Al-containing film are selectively removed from an n-channel MISFET formation region. Then, a rare-earth-element-containing film is formed over the HfSiON film in the n-channel MISFET formation region and over the mask layer in a p-channel MISFET formation region. Heat treatment is performed to cause a reaction between each of the HfON film and the HfSiON film and the rare-earth-element-containing film in the n-channel MISFET formation region and cause a reaction between each of the HfON film and the HfSiON film and the Al-containing film in the p-channel MISFET formation region. Thereafter, the unreacted rare-earth-element-containing film and the mask layer are removed, and then metal gate electrodes are formed.

    摘要翻译： 在半导体衬底上形成包括界面层，HfON膜和HfSiON膜的栅极绝缘膜。 然后，在HfSiON膜上形成含Al膜和掩模层。 随后，从n沟道MISFET形成区域选择性地去除掩模层和含Al膜。 然后，在n沟道MISFET形成区域中的HfSiON膜上并且在p沟道MISFET形成区域中的掩模层之上形成含稀土元素的膜。 进行热处理以在n沟道MISFET形成区域中引起HfON膜和HfSiON膜和含稀土元素的膜之间的反应，并引起HfON膜和HfSiON膜中的每一个之间的反应 以及p沟道MISFET形成区域中的含Al膜。 此后，除去未反应的含稀土元素膜和掩模层，然后形成金属栅电极。