公开(公告)号：US10978505B2

公开(公告)日：2021-04-13

申请号：US16278941

申请日：2019-02-19

申请人： RENESAS ELECTRONICS CORPORATION

发明人： Hidenori Sato ,  Koji Iizuka ,  Takeshi Kamino

IPC分类号： H01L27/14 ,  H01L27/146 ,  H01L23/00

摘要： A hybrid-bonding-type solid-state imaging device is provided that prevents moisture from entering through the bonded interface and other areas. The solid-state imaging device includes a first interconnect structure over a sensor substrate and a second interconnect structure over a logic substrate, and the first and second interconnect structures are bonded together. At the bonded surface between the first and second interconnect structures, bonding pads formed in the first interconnect structure are bonded to bonding pads formed in the second interconnect structure. Eighth layer portions of a first seal ring formed in the first interconnect structure are bonded to eighth layer portions of a second seal ring formed in the second interconnect structure.

公开(公告)号：US09508774B2

公开(公告)日：2016-11-29

申请号：US14082303

申请日：2013-11-18

申请人： Renesas Electronics Corporation

发明人： Koji Iizuka

IPC分类号： H01L27/148 ,  H01L27/146

CPC分类号： H01L27/1462 ,  H01L23/564 ,  H01L27/146 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687

摘要： There are provided a highly reliable semiconductor device capable of suppressing occurrence of cracks as well as securing flatness and a manufacturing method therefor. The semiconductor device includes: a semiconductor substrate; an element region; and a non-element region. The non-element region includes: a top-layer metal wiring in a top layer of metal wirings formed in the non-element region; a flattening film covering an upper surface of the top-layer metal wiring; and a protecting film formed over the flattening film. A removed part where the protecting film is removed is formed in at least part of the non-element region.

摘要翻译： 提供了能够抑制裂纹发生以及确保平坦度的高度可靠的半导体器件及其制造方法。 半导体器件包括：半导体衬底; 元素区域 和非元素区域。 非元件区域包括：形成在非元件区域中的金属布线顶层中的顶层金属布线; 覆盖上层金属布线的上表面的平坦化膜; 以及在平坦化膜上形成的保护膜。 去除保护膜的去除部分形成在非元件区域的至少一部分中。

公开(公告)号：US10411056B2

公开(公告)日：2019-09-10

申请号：US15297211

申请日：2016-10-19

申请人： Renesas Electronics Corporation

发明人： Koji Iizuka

IPC分类号： H01L27/146 ,  H01L23/00

摘要： There are provided a highly reliable semiconductor device capable of suppressing occurrence of cracks as well as securing flatness and a manufacturing method therefor. The semiconductor device includes: a semiconductor substrate; an element region; and a non-element region. The non-element region includes: a top-layer metal wiring in a top layer of metal wirings formed in the non-element region; a flattening film covering an upper surface of the top-layer metal wiring; and a protecting film formed over the flattening film. A removed part where the protecting film is removed is formed in at least part of the non-element region.

公开(公告)号：US09991297B2

公开(公告)日：2018-06-05

申请号：US15200803

申请日：2016-07-01

申请人： RENESAS ELECTRONICS CORPORATION

发明人： Koji Iizuka ,  Takahiro Tomimatsu

IPC分类号： H01L27/148 ,  H01L27/146 ,  H01L21/00

CPC分类号： H01L27/14605 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14689 ,  H01L27/14698

摘要： An imaging device is provided, in which the dynamic range of still pictures can be suppressed from being decreased. In the imaging device, a photodiode including an n-type impurity region and a photodiode including an n-type impurity region are formed in a p-type well. An n-type impurity region is formed between the n-type impurity region on one side and that on the other side so as to contact each of the two. The impurity concentration of the last-formed n-type impurity region is set to be lower than those of the first-formed n-type impurity regions.