SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
    半导体器件的半导体器件和制造方法

    公开(公告)号:US20140209996A1

    公开(公告)日:2014-07-31

    申请号:US14242500

    申请日:2014-04-01

    Abstract: A semiconductor device with a nonvolatile memory is provided which has improved characteristics. The semiconductor device includes a control gate electrode, a memory gate electrode disposed adjacent to the control gate electrode, a first insulating film, and a second insulating film including therein a charge storing portion. Among these components, the memory gate electrode is formed of a silicon film including a first silicon region positioned over the second insulating film, and a second silicon region positioned above the first silicon region. The second silicon region contains p-type impurities, and the concentration of p-type impurities of the first silicon region is lower than that of the p-type impurities of the second silicon region.

    Abstract translation: 提供了具有非易失性存储器的半导体器件,其具有改进的特性。 半导体器件包括控制栅极电极,与控制栅电极相邻设置的存储栅电极,第一绝缘膜和包括电荷存储部分的第二绝缘膜。 在这些部件中,存储栅电极由包括位于第二绝缘膜上的第一硅区的硅膜和位于第一硅区之上的第二硅区构成。 第二硅区域含有p型杂质,第一硅区域的p型杂质浓度低于第二硅区域的p型杂质浓度。

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