知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

15 records (took 0.016 seconds)

    Semiconductor device with lead between a plurality of encapsulated MOSFETs
    2.
    发明授权
    Semiconductor device with lead between a plurality of encapsulated MOSFETs 有权

    公开(公告)号：US12159816B2

    公开(公告)日：2024-12-03

    申请号：US18492586

    申请日：2023-10-23

    Applicant: ROHM CO., LTD.

    Inventor： Kentaro Nasu

    IPC: H01L23/495 ,  H01L23/00 ,  H01L23/31 ,  H01L25/07

    Abstract: The semiconductor device includes first and second semiconductor elements. Each element has an obverse surface and a reverse surface, with a first electrode arranged on the reverse surface, and with a second electrode arranged on the obverse surface. The semiconductor device further includes: a first lead having an obverse surface and a reverse surface; an insulating layer covering the first lead, the first semiconductor element and the second semiconductor element; a first electrode connected to the second electrode of the first semiconductor element; and a second electrode connected to the first lead. The first semiconductor element and the first lead are bonded to each other with the reverse surface of the first semiconductor element facing the lead obverse surface. The second semiconductor element and the first lead are bonded to each other with the reverse surface of the second semiconductor element facing the lead reverse surface.

    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10090294B2

    公开(公告)日：2018-10-02

    申请号：US15449479

    申请日：2017-03-03

    Applicant: ROHM CO., LTD.

    Inventor： Kenji Nishida ,  Shinpei Ohnishi ,  Kentaro Nasu

    IPC: H01L29/866 ,  H01L27/06 ,  H01L29/739 ,  H01L29/423 ,  H01L29/06

    Abstract: A semiconductor device, including a semiconductor layer of a first conductivity type, having a main surface with a diode trench formed therein, an inner wall insulating film, including a side wall insulating film, formed along side walls of the diode trench, and a bottom wall insulating film, formed along a bottom wall of the diode trench and having a thickness greater than a thickness of the side wall insulating film, and a bidirectional Zener diode, formed on the bottom wall insulating film inside the diode trench and having a pair of first conductivity type portions and at least one second conductivity type portion formed between the pair of first conductivity type portions.

    Semiconductor with unified transistor structure and voltage regulator diode
    5.
    发明授权
    Semiconductor with unified transistor structure and voltage regulator diode 有权

    公开(公告)号：US11201237B2

    公开(公告)日：2021-12-14

    申请号：US16703579

    申请日：2019-12-04

    Applicant: ROHM CO., LTD.

    Inventor： Kentaro Nasu

    IPC: H01L29/78 ,  H01L29/866 ,  H01L29/423 ,  H01L29/16 ,  H01L29/417 ,  H01L27/02

    Abstract: A semiconductor device includes a semiconductor layer that has a transistor structure including a p type source region, a p type drain region, an n type body region between the p type source region and the p type drain region, and a gate electrode facing the n type body region and a voltage-regulator diode that is disposed at the semiconductor layer and that has an n type portion connected to the p type source region and a p type portion connected to the gate electrode, in which the transistor structure and the voltage-regulator diode are unified into a single-chip configuration.

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10566325B2

    公开(公告)日：2020-02-18

    申请号：US16105518

    申请日：2018-08-20

    Applicant: ROHM CO., LTD.

    Inventor： Kenji Nishida ,  Shinpei Ohnishi ,  Kentaro Nasu

    IPC: H01L27/06 ,  H01L29/866 ,  H01L29/739 ,  H01L29/423 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/40 ,  H01L29/16 ,  H01L29/20

    Abstract: A semiconductor device, including a semiconductor layer of a first conductivity type, having a main surface with a diode trench formed therein, an inner wall insulating film, including a side wall insulating film, formed along side walls of the diode trench, and a bottom wall insulating film, formed along a bottom wall of the diode trench and having a thickness greater than a thickness of the side wall insulating film, and a bidirectional Zener diode, formed on the bottom wall insulating film inside the diode trench and having a pair of first conductivity type portions and at least one second conductivity type portion formed between the pair of first conductivity type portions.

Patent Agency Ranking