公开(公告)号：US20190096998A1

公开(公告)日：2019-03-28

申请号：US16035089

申请日：2018-07-13

Applicant: Renesas Electronics Corporation

Inventor： Yuji FUJII ,  Kenichi Hisada ,  Yasunori Yanashita

IPC: H01L29/16 ,  H01L29/49 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28

Abstract: A method for manufacturing a semiconductor device includes the steps of forming a metal film (Ni film) over the bottom surface of a contact hole that exposes a portion including SiC at the bottom surface, and performing a heat treatment to form a silicide film at the bottom surface of the contact hole by a silicidation reaction of the metal film MT and the portion including SiC. Also, the heat treatment step is a step of irradiating a laser beam on the surface of a SiC substrate. As the heat treatment, annealing is performed using the laser beam that goes through SiC and is absorbed by metal (Ni and the like).

公开(公告)号：US20170207331A1

公开(公告)日：2017-07-20

申请号：US15404509

申请日：2017-01-12

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Sho NAKANISHI ,  Yuji FUJII

IPC: H01L29/739 ,  H01L29/66 ,  H01L27/06 ,  H01L23/535 ,  H01L29/08 ,  H01L29/36 ,  H01L21/265

CPC classification number: H01L29/7397 ,  H01L21/265 ,  H01L21/28518 ,  H01L23/535 ,  H01L27/0635 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/36 ,  H01L29/417 ,  H01L29/456 ,  H01L29/66348

Abstract: A performance of a semiconductor device including an RC-IGBT is improved. An AlNiSi layer (a layer containing aluminum (Al), nickel (Ni), and silicon (Si)) is formed between a back surface of a semiconductor substrate and a back surface electrode. Thus, a favorable ohmic junction can be obtained between the back surface electrode and an N+-type layer constituting a cathode region in an embedded diode, and a favorable ohmic junction can be obtained between the back surface electrode and a P-type layer constituting a collector region in an IGBT. The AlNiSi layer contains 10 at % or more of each of the aluminum (Al), the nickel (Ni), and the silicon (Si).