公开(公告)号：US20140125289A1

公开(公告)日：2014-05-08

申请号：US14070644

申请日：2013-11-04

Applicant: Renesas Electronics Corporation

Inventor： Fumio TONOMURA ,  Hideo ISHII ,  Tsuyoshi OTA

IPC: H02J7/00

CPC classification number: H02J7/0029 ,  G01R19/00 ,  G01R19/16519 ,  G01R19/16542 ,  G01R31/3606 ,  H01L27/0207 ,  H01L27/088 ,  H01L29/7813 ,  H01L29/7815 ,  H01M10/48 ,  H01M2010/4278 ,  H02J2007/0037 ,  H02J2007/0039 ,  H02J2007/004

Abstract: A cell protection system includes a charge control MOSFET 21, a charge current detection MOSFET 23, a discharge control MOSFET 20, a discharge current detection MOSFET 22, a charge current detection resistance 19, a discharge current detection resistance 16 and a control circuit. The MOSFET 23 has a drain and a gate common with the MOSFET 21. The MOSFET 20 has a drain common with the MOSFET 21. The MOSFET 22 has a drain and a gate common with the MOSFET 20. The resistances 19 and 16 are provided in correspondence to the MOSFETs 23 and 22, respectively. The control circuit generates a gate control signal for the MOSFETs 21 and 23 by using the resistance 19 and generates a gate control signal for the MOSFETs 20 and 22 by using the resistance 16.

Abstract translation: 电池保护系统包括充电控制MOSFET 21，充电电流检测MOSFET 23，放电控制MOSFET 20，放电电流检测MOSFET 22，充电电流检测电阻19，放电电流检测电阻16和控制电路。 MOSFET 23具有与MOSFET 21共用的漏极和栅极。MOSFET 20具有与MOSFET 21共用的漏极。MOSFET 22具有与MOSFET 20共用的漏极和栅极。电阻19和16设置在 对应于MOSFET 23和22。 控制电路通过使用电阻19产生用于MOSFET 21和23的栅极控制信号，并且通过使用电阻16产生用于MOSFET 20和22的栅极控制信号。

公开(公告)号：US20150214213A1

公开(公告)日：2015-07-30

申请号：US14681452

申请日：2015-04-08

Applicant: Renesas Electronics Corporation

Inventor： Fumio TONOMURA ,  Hideo ISHII ,  Tsuyoshi OTA

IPC: H01L27/02 ,  H01L29/866 ,  H01L27/06

CPC classification number: H01L27/0255 ,  H01L23/34 ,  H01L23/4824 ,  H01L25/16 ,  H01L27/0211 ,  H01L27/0251 ,  H01L27/0296 ,  H01L27/0629 ,  H01L27/0676 ,  H01L29/866 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A first MOSFET is formed in a first region of a chip, and a second MOSFET is formed in a second region thereof. A first source terminal and a first gate terminal are formed in the first region. In the second region, a second source terminal and a second gate terminal are arranged so as to be aligned substantially parallel to a direction in which the first source terminal and the first gate terminal are aligned. A temperature detection diode is arranged between the first source terminal and the second source terminal. A first terminal and a second terminal of the temperature detection diode are aligned in a first direction substantially parallel to a direction in which the first source terminal and the first gate terminal are aligned or in a second direction substantially perpendicular thereto.

Abstract translation: 第一MOSFET形成在芯片的第一区域中，并且第二MOSFET形成在其第二区域中。 第一源极端子和第一栅极端子形成在第一区域中。 在第二区域中，第二源极端子和第二栅极端子布置成基本上平行于第一源极端子和第一栅极端子对准的方向对准。 温度检测二极管设置在第一源极端子和第二源极端子之间。 温度检测二极管的第一端子和第二端子在基本上平行于第一源极端子和第一栅极端子对准的方向的第一方向上或者与其基本垂直的第二方向上对齐。

公开(公告)号：US20160149424A1

公开(公告)日：2016-05-26

申请号：US15010050

申请日：2016-01-29

Applicant: Renesas Electronics Corporation

Inventor： Fumio TONOMURA ,  Hideo ISHII ,  Tsuyoshi OTA

IPC: H02J7/00 ,  G01R31/36

CPC classification number: H02J7/0029 ,  G01R19/00 ,  G01R19/16519 ,  G01R19/16542 ,  G01R31/3606 ,  H01L27/0207 ,  H01L27/088 ,  H01L29/7813 ,  H01L29/7815 ,  H01M10/48 ,  H01M2010/4278 ,  H02J2007/0037 ,  H02J2007/0039 ,  H02J2007/004

Abstract: A cell protection system includes a charge control MOSFET 21, a charge current detection MOSFET 23, a discharge control MOSFET 20, a discharge current detection MOSFET 22, a charge current detection resistance 19, a discharge current detection resistance 16 and a control circuit. The MOSFET 23 has a drain and a gate common with the MOSFET 21. The MOSFET 20 has a drain common with the MOSFET 21. The MOSFET 22 has a drain and a gate common with the MOSFET 20. The resistances 19 and 16 are provided in correspondence to the MOSFETs 23 and 22, respectively. The control circuit generates a gate control signal for the MOSFETs 21 and 23 by using the resistance 19 and generates a gate control signal for the MOSFETs 20 and 22 by using the resistance 16.

Abstract translation: 电池保护系统包括充电控制MOSFET 21，充电电流检测MOSFET 23，放电控制MOSFET 20，放电电流检测MOSFET 22，充电电流检测电阻19，放电电流检测电阻16和控制电路。 MOSFET 23具有与MOSFET 21共用的漏极和栅极。MOSFET 20具有与MOSFET 21共用的漏极。MOSFET 22具有与MOSFET 20共用的漏极和栅极。电阻19和16设置在 对应于MOSFET 23和22。 控制电路通过使用电阻19产生用于MOSFET 21和23的栅极控制信号，并且通过使用电阻16产生用于MOSFET 20和22的栅极控制信号。

公开(公告)号：US20140173302A1

公开(公告)日：2014-06-19

申请号：US14187502

申请日：2014-02-24

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Ryotaro KUDO ,  Tomoaki UNO ,  Koji TATENO ,  Hideo ISHII ,  Kazuyuki UMEZU ,  Koji SAIKUSA

IPC: H02M3/158 ,  G06F1/26

CPC classification number: H02M3/158 ,  G06F1/26 ,  H02M3/1584 ,  H02M2003/1586

Abstract: Miniaturization of a multiphase type power supply device can be achieved. A power supply control unit in which, for example, a microcontroller unit, a memory unit and an analog controller unit are formed over a single chip, a plurality of PWM-equipped drive units, and a plurality of inductors configure a multiphase power supply. The microcontroller unit outputs clock signals each having a frequency and a phase defined based on a program on the memory unit to the respective PWM-equipped drive units. The analog controller unit detects a difference between a voltage value of a load and a target voltage value acquired via a serial interface and outputs an error amp signal therefrom. Each of the PWM-equipped drive units drives each inductor by a peak current control system using the clock signal and the error amp signal.

Abstract translation: 可以实现多相电源装置的小型化。 电源控制单元，其中例如在单个芯片上形成微控制器单元，存储单元和模拟控制器单元，多个配备PWM的驱动单元和多个电感器构成多相电源。 微控制器单元输出每个具有基于存储器单元上的程序定义的频率和相位到相应的配备有PWM的驱动单元的时钟信号。 模拟控制器单元检测负载的电压值与通过串行接口获取的目标电压值之间的差值，并输出误差放大器信号。 每个配备PWM的驱动单元通过使用时钟信号和误差放大器信号的峰值电流控制系统驱动每个电感器。

公开(公告)号：US20150280571A1

公开(公告)日：2015-10-01

申请号：US14742045

申请日：2015-06-17

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Koji TATENO ,  Takahiro NOMIYAMA ,  Yoshinao MIURA ,  Hideo ISHII

IPC: H02M3/158

CPC classification number: H02M3/158 ,  H02M1/38 ,  H02M3/1588 ,  Y02B70/1466

Abstract: Disclosed is a power conversion circuit that suppresses the flow of a through current to a switching element based on a normally-on transistor. The power conversion circuit includes a high-side transistor and a low-side transistor, which are series-coupled to each other to form a half-bridge circuit, and two drive circuits, which complementarily drive the gate of the high-side transistor and of the low-side transistor. The high-side transistor is a normally-off transistor. The low-side transistor is a normally-on transistor.

Abstract translation: 公开了一种功率转换电路，其抑制基于常通晶体管的开关元件的通流电流。 功率转换电路包括彼此串联耦合以形成半桥电路的高侧晶体管和低侧晶体管，以及互补驱动高边晶体管的栅极的两个驱动电路，以及 的低端晶体管。 高边晶体管是常关晶体管。 低端晶体管是常开晶体管。

公开(公告)号：US20140070319A1

公开(公告)日：2014-03-13

申请号：US13952869

申请日：2013-07-29

Applicant: Renesas Electronics Corporation

Inventor： Fumio TONOMURA ,  Hideo ISHII ,  Tsuyoshi OTA

IPC: H01L27/06

CPC classification number: H01L27/0255 ,  H01L23/34 ,  H01L23/4824 ,  H01L25/16 ,  H01L27/0211 ,  H01L27/0251 ,  H01L27/0296 ,  H01L27/0629 ,  H01L27/0676 ,  H01L29/866 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A first MOSFET is formed in a first region of a chip, and a second MOSFET is formed in a second region thereof. A first source terminal and a first gate terminal are formed in the first region. In the second region, a second source terminal and a second gate terminal are arranged so as to be aligned substantially parallel to a direction in which the first source terminal and the first gate terminal are aligned. A temperature detection diode is arranged between the first source terminal and the second source terminal. A first terminal and a second terminal of the temperature detection diode are aligned in a first direction substantially parallel to a direction in which the first source terminal and the first gate terminal are aligned or in a second direction substantially perpendicular thereto.

Abstract translation: 第一MOSFET形成在芯片的第一区域中，并且第二MOSFET形成在其第二区域中。 第一源极端子和第一栅极端子形成在第一区域中。 在第二区域中，第二源极端子和第二栅极端子布置成基本上平行于第一源极端子和第一栅极端子对准的方向对准。 温度检测二极管设置在第一源极端子和第二源极端子之间。 温度检测二极管的第一端子和第二端子在基本上平行于第一源极端子和第一栅极端子对准的方向的第一方向上或者与其基本垂直的第二方向上对齐。