公开(公告)号：US20150213865A1

公开(公告)日：2015-07-30

申请号：US14451510

申请日：2014-08-05

Applicant: QUALCOMM Incorporated

Inventor： Wenqing WU ,  Raghu Sagar MADALA ,  Kendrick Hoy Leong YUEN ,  Karim ARABI

IPC: G11C11/16 ,  G11C11/18 ,  H01L43/14

CPC classification number: G11C11/161 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  H01L43/14

Abstract: Systems and methods are directed to a memory element comprising a hybrid giant spin Hall effect (GSHE)-spin transfer torque (STT) magnetoresistive random access memory (MRAM) element, which includes a GSHE strip formed between a first terminal (A) and a second terminal (B), and a magnetic tunnel junction (MTJ), with a free layer of the MTJ interfacing the GSHE strip, and a fixed layer of the MTJ coupled to a third terminal (C). The orientation of the easy axis of the free layer is perpendicular to the magnetization created by electrons traversing the GSHE strip between the first terminal and the second terminal, such that the free layer of the MTJ is configured to switch based on a first charge current injected from/to the first terminal to/from the second terminal and a second charge current injected/extracted through the third terminal into/out of the MTJ via the third terminal (C).

公开(公告)号：US20150213866A1

公开(公告)日：2015-07-30

申请号：US14479832

申请日：2014-09-08

Applicant: QUALCOMM Incorporated

Inventor： Wenqing WU ,  Raghu Sagar MADALA ,  Kendrick Hoy Leong YUEN ,  Karim ARABI

IPC: G11C11/16 ,  G11C11/18 ,  H01L43/14

CPC classification number: G11C11/161 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  H01L43/14

Abstract: Systems and methods are directed to a memory element comprising a hybrid giant spin Hall effect (GSHE)-spin transfer torque (STT) magnetoresistive random access memory (MRAM) element, which includes a GSHE strip formed between a first terminal (A) and a second terminal (B), and a magnetic tunnel junction (MTJ), with a free layer of the MTJ interfacing the GSHE strip, and a fixed layer of the MTJ coupled to a third terminal (C). The orientation of the easy axis of the free layer is perpendicular to the magnetization created by electrons traversing the GSHE strip between the first terminal and the second terminal, such that the free layer of the MTJ is configured to switch based on a first charge current injected from/to the first terminal to/from the second terminal and a second charge current injected/extracted through the third terminal into/out of the MTJ via the third terminal (C).

Abstract translation: 系统和方法涉及包括混合巨型旋转霍尔效应（GSHE） - 旋转转矩（STT）磁阻随机存取存储器（MRAM）元件的存储元件，其包括形成在第一端子（A）和第二端子 第二端子（B）和磁性隧道结（MTJ），具有与GSHE条带接合的MTJ的自由层和耦合到第三端子（C）的MTJ的固定层。 自由层的容易轴的取向垂直于通过在第一端子和第二端子之间穿过GSHE带的电子产生的磁化，使得MTJ的自由层被配置为基于注入的第一充电电流来切换 从第一端子到第二端子和从第二端子到第一端子的第二充电电流经由第三端子（C）通过第三端子注入/提取出MTJ的第二充电电流。