公开(公告)号：US20160005849A1

公开(公告)日：2016-01-07

申请号：US14321539

申请日：2014-07-01

Applicant: QUALCOMM Incorporated

Inventor： Xia LI ,  Bin YANG ,  Ming CAI

IPC: H01L29/778 ,  H01L29/66 ,  H01L21/02 ,  H01L29/201 ,  H01L29/205 ,  H01L21/762 ,  H01L29/78 ,  H01L29/20

CPC classification number: H01L29/7789 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/76224 ,  H01L29/0657 ,  H01L29/151 ,  H01L29/20 ,  H01L29/201 ,  H01L29/205 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/7781 ,  H01L29/7783 ,  H01L29/7785 ,  H01L29/7787 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/78696

Abstract: An inner fin of a high bandgap material is on a substrate, having two vertical faces, and is surrounded by a carrier redistribution fin of a low bandgap material. The inner fin and the carrier redistribution fin have two vertical interfaces. The carrier redistribution fin has a thickness and a bandgap relative to the bandgap of the inner fin that establishes, along the two vertical interfaces, an equilibrium of a corresponding two two-dimensional electron gasses.

公开(公告)号：US20160013306A1

公开(公告)日：2016-01-14

申请号：US14858992

申请日：2015-09-18

Applicant: QUALCOMM Incorporated

Inventor： Xia LI ,  Bin YANG ,  Ming CAI

IPC: H01L29/778 ,  H01L21/02 ,  H01L29/15 ,  H01L29/66 ,  H01L29/205 ,  H01L29/78

CPC classification number: H01L29/7789 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/76224 ,  H01L29/0657 ,  H01L29/151 ,  H01L29/20 ,  H01L29/201 ,  H01L29/205 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/7781 ,  H01L29/7783 ,  H01L29/7785 ,  H01L29/7787 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/78696

Abstract: An inner fin of a high bandgap material is on a substrate, having two vertical faces, and is surrounded by a carrier redistribution fin of a low bandgap material. The inner fin and the carrier redistribution fin have two vertical interfaces. The carrier redistribution fin has a thickness and a bandgap relative to the bandgap of the inner fin that establishes, along the two vertical interfaces, an equilibrium of a corresponding two two-dimensional electron gasses.

Abstract translation: 高带隙材料的内翅片在基板上，具有两个垂直面，并被低带隙材料的载流子再分布翅片围绕。 内鳍和载体再分布鳍具有两个垂直接口。 载流子再分布片相对于内鳍的带隙具有厚度和带隙，沿着两个垂直界面建立相应的两个二维电子气体的平衡。

公开(公告)号：US20150001631A1

公开(公告)日：2015-01-01

申请号：US14109203

申请日：2013-12-17

Applicant: QUALCOMM Incorporated

Inventor： Xia LI ,  Ming CAI ,  Samit SENGUPTA ,  PR CHIDAMBARAM

IPC: H01L21/8238 ,  H01L27/092

CPC classification number: H01L21/8238 ,  H01L21/823807 ,  H01L21/823828 ,  H01L21/823857 ,  H01L27/092

Abstract: Complementary metal oxide semiconductor (CMOS) devices include input/output (I/O) devices and core function devices. A method includes forming first conduction type wells for the I/O devices and the core function devices with a well mask. Such a method also includes creating at least one baseline device of a first conduction type, at least one first threshold voltage device of the first conduction type, and at least one second threshold device of the first conduction type by tuning a conduction type drive current ratio with a threshold voltage mask. The method also includes controlling a gate critical dimension for the first conduction type devices and/or at least one second conduction type device using a gate mask.

Abstract translation: 互补金属氧化物半导体（CMOS）器件包括输入/​​输出（I / O）器件和核心功能器件。 一种方法包括用于具有良好掩模的I / O设备和核心功能设备的第一导电型阱。 这种方法还包括通过调谐传导类型的驱动电流比率来产生第一导电类型的至少一个基线装置，第一导电类型的至少一个第一阈值电压装置和第一导电类型的至少一个第二阈值装置 具有阈值电压掩模。 该方法还包括使用栅极掩模来控制第一导电类型器件和/或至少一个第二导电型器件的栅极临界尺寸。