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    BIASING A SILICON-ON-INSULATOR (SOI) SUBSTRATE TO ENHANCE A DEPLETION REGION
    1.
    发明申请
    BIASING A SILICON-ON-INSULATOR (SOI) SUBSTRATE TO ENHANCE A DEPLETION REGION 审中-公开
    偏置绝缘子绝缘体（SOI）衬底以增强一个绝缘区域

    公开(公告)号：US20160035899A1

    公开(公告)日：2016-02-04

    申请号：US14447068

    申请日：2014-07-30

    Applicant: QUALCOMM Incorporated

    Inventor： Jiri Stulemeijer ,  Arnold Den Dekker ,  Maurice Adrianus de Jongh

    IPC: H01L29/786 ,  H03K17/687 ,  H03K17/12

    CPC classification number: H01L29/78606 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/78603 ,  H03K17/122 ,  H03K17/687 ,  H03K2017/6875

    Abstract: A device includes a silicon-on-insulator (SOI) substrate comprising a bulk silicon (Si) substrate, a buried oxide layer over the bulk Si substrate and a silicon device layer over the buried oxide layer, a first substrate tap and a second substrate tap located in the buried oxide layer and the silicon device layer, the first and second substrate taps in contact with the bulk Si substrate, and an initial depletion region located in the bulk Si substrate below the buried oxide layer and associated with at least one of the first substrate tap and the second substrate tap, the first substrate tap and the second substrate tap configured to increase the initial depletion region based on an applied bias voltage.

    Abstract translation: 一种器件包括：绝缘体上硅（SOI）衬底，其包括体硅（Si）衬底，体Si衬底上的掩埋氧化物层和掩埋氧化物层上的硅器件层，第一衬底抽头和第二衬底 位于掩埋氧化物层和硅器件层中的第一和第二衬底，与第一和第二衬底接触的本体Si衬底以及位于掩埋氧化物层下面的本体Si衬底中的初始耗尽区，并与第一和第二衬底的至少一个 第一衬底抽头和第二衬底抽头，第一衬底抽头和第二衬底抽头被配置为基于施加的偏置电压来增加初始耗尽区域。

    Transistor based switch stack having filters for preserving AC equipotential nodes
    4.
    发明授权
    Transistor based switch stack having filters for preserving AC equipotential nodes 有权
    基于晶体管的开关堆叠具有用于保持交流等电位节点的滤波器

    公开(公告)号：US09438223B2

    公开(公告)日：2016-09-06

    申请号：US14281965

    申请日：2014-05-20

    Applicant: QUALCOMM Incorporated

    Inventor： Maurice Adrianus de Jongh

    IPC: H03K3/012 ,  H04B1/40 ,  H03K17/16 ,  H03K17/10

    CPC classification number: H03K17/161 ,  H03K3/012 ,  H03K17/102 ,  H03K17/162 ,  H03K2217/0018 ,  H03K2217/0054 ,  H04B1/40

    Abstract: A device for switching a radio frequency (RF) signal includes two or more field-effect transistor (FET) unit cells in a stacked or chain topology, and gate or body node filtration circuitry that preserves RF equipotential nodes. The filtration circuitry may be capacitive or resistive-capacitive. The filtration circuitry may be included in each unit cell of the device or in a gate or body bias network that is common to all unit cells in the device.

    Abstract translation: 用于切换射频（RF）信号的装置包括堆叠或链式拓扑中的两个或多个场效应晶体管（FET）单元，以及保留RF等电位节点的门或体节点滤波电路。 过滤电路可以是电容性的或电阻的。 过滤电路可以包括在设备的每个单元电池中，或者在设备中所有单元电池共用的门或体偏置网络中。

    TRANSISTOR BASED SWITCH STACK HAVING FILTERS FOR PRESERVING AC EQUIPOTENTIAL NODES
    5.
    发明申请
    TRANSISTOR BASED SWITCH STACK HAVING FILTERS FOR PRESERVING AC EQUIPOTENTIAL NODES 有权
    基于晶体管的开关堆栈，具有用于保存交流电位的滤波器

    公开(公告)号：US20150341026A1

    公开(公告)日：2015-11-26

    申请号：US14281965

    申请日：2014-05-20

    Applicant: QUALCOMM Incorporated

    Inventor： Maurice Adrianus de Jongh

    IPC: H03K17/16 ,  H04B1/40 ,  H03K3/012

    CPC classification number: H03K17/161 ,  H03K3/012 ,  H03K17/102 ,  H03K17/162 ,  H03K2217/0018 ,  H03K2217/0054 ,  H04B1/40

    Abstract: A device for switching a radio frequency (RF) signal includes two or more field-effect transistor (FET) unit cells in a stacked or chain topology, and gate or body node filtration circuitry that preserves RF equipotential nodes. The filtration circuitry may be capacitive or resistive-capacitive. The filtration circuitry may be included in each unit cell of the device or in a gate or body bias network that is common to all unit cells in the device.

    Abstract translation: 用于切换射频（RF）信号的装置包括堆叠或链式拓扑中的两个或多个场效应晶体管（FET）单元，以及保留RF等电位节点的门或体节点滤波电路。 过滤电路可以是电容性的或电阻的。 过滤电路可以包括在设备的每个单元电池中，或者在设备中所有单元电池共用的门或体偏置网络中。

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