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1.发明申请QUANTITATIVE CHARACTERIZATION OF NONLINEARITY AND MEMORY EFFECT IN NONLINEAR CIRCUITS 审中-公开非线性电路中非线性和记忆效应的量化特征公开(公告)号：US20150160279A1
公开(公告)日：2015-06-11
申请号：US14564071
申请日：2014-12-08
Applicant: QUALCOMM Incorporated
Inventor： Hao Zhou , Feipeng Wang , Haojen Cheng , Volodymyr Rakytyanskyy
CPC classification number: G01R29/26 , H03F1/3247 , H03F3/189 , H03F3/245 , H03F2201/3209 , H03F2201/3224 , H03F2201/3233
Abstract: An input signal is transmitted to a component. A distortion associated with the component is determined based, at least in part, on an output signal generated by the component in response to the input signal. A distortion error measurement associated with the component is determined based, at least in part, on the distortion and the output signal generated by the component. A memory effect and the associated nonlinearity within the component are quantified based, at least in part, on the distortion error measurement.
Abstract translation: 输入信号被发送到组件。 至少部分地基于由该组件响应输入信号产生的输出信号来确定与该组件相关联的失真。 至少部分地基于由该部件产生的失真和输出信号确定与该部件相关联的失真误差测量。 至少部分地基于失真误差测量量化部件内的记忆效应和相关联的非线性。
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公开(公告)号：US20160211804A1
公开(公告)日：2016-07-21
申请号：US14598612
申请日：2015-01-16
Applicant: QUALCOMM Incorporated
Inventor： Shu-Hsien Liao , Feipeng Wang , Cheng-Han Wang
CPC classification number: H03F1/0205 , H03F1/0266 , H03F1/223 , H03F1/3205 , H03F3/19 , H03F3/21 , H03F3/245 , H03F2200/18 , H03F2200/294 , H03F2200/451 , H03F2200/555 , H03F2201/3209
Abstract: A power amplifier bias circuit having high dynamic range and low memory is disclosed. In an exemplary embodiment, an apparatus includes an output stage configured to generate a biased RF signal based on a first DC signal and a filtered signal. The apparatus also includes a low pass filter configured to filter the biased RF signal to generate the filtered signal.
Abstract translation: 公开了具有高动态范围和低存储器的功率放大器偏置电路。 在示例性实施例中，一种装置包括：输出级，被配置为基于第一DC信号和滤波信号产生偏置的RF信号。 该装置还包括低通滤波器，其配置成对偏置的RF信号进行滤波以产生经滤波的信号。
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公开(公告)号：US09941842B2
公开(公告)日：2018-04-10
申请号：US14598612
申请日：2015-01-16
Applicant: QUALCOMM Incorporated
Inventor： Shu-Hsien Liao , Feipeng Wang , Cheng-Han Wang
CPC classification number: H03F1/0205 , H03F1/0266 , H03F1/223 , H03F1/3205 , H03F3/19 , H03F3/21 , H03F3/245 , H03F2200/18 , H03F2200/294 , H03F2200/451 , H03F2200/555 , H03F2201/3209
Abstract: A power amplifier bias circuit having high dynamic range and low memory is disclosed. In an exemplary embodiment, an apparatus includes an output stage configured to generate a biased RF signal based on a first DC signal and a filtered signal. The apparatus also includes a low pass filter configured to filter the biased RF signal to generate the filtered signal.
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