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公开(公告)号:US20230354626A1
公开(公告)日:2023-11-02
申请号:US18333609
申请日:2023-06-13
Inventor: TAKANORI DOI , TAKAMICHI YOKOYAMA , TAKAHIRO KOYANAGI
IPC: H10K39/32
CPC classification number: H10K39/32
Abstract: An imaging device includes a pixel electrode, a counter electrode facing the pixel electrode, and a photoelectric conversion layer located between the pixel electrode and the counter electrode. The counter electrode includes a first transparent electrode, a second transparent electrode, and an intermediate layer located between the first transparent electrode and the second transparent electrode. A material of the intermediate layer is different from a material of the first transparent electrode and different from a material of the second transparent electrode. The photoelectric conversion layer, the first transparent electrode, the intermediate layer, and the second transparent electrode are arranged in this order. The intermediate layer contains an insulating material as a major ingredient.
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公开(公告)号:US20210273020A1
公开(公告)日:2021-09-02
申请号:US17324181
申请日:2021-05-19
Inventor: TAKAHIRO KOYANAGI , YUUKO TOMEKAWA
Abstract: An imaging device includes a first electrode, a second electrode, a photoelectric conversion layer that is arranged between the first electrode and the second electrode, and an electron blocking layer that suppresses movement of electrons from the first electrode to the photoelectric conversion layer. The electron blocking layer contains carbon and an oxide of chromium and is arranged between the first electrode and the photoelectric conversion layer.
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3.
公开(公告)号:US20190252488A1
公开(公告)日:2019-08-15
申请号:US16259102
申请日:2019-01-28
Inventor: TAKAHIRO KOYANAGI , YUUKO TOMEKAWA , TAKESHI HARADA , YOSHIO KAWASHIMA
IPC: H01L49/02 , H01L21/3215 , H01L21/285 , H01L21/02
CPC classification number: H01L28/40 , H01L21/02181 , H01L21/02189 , H01L21/02205 , H01L21/0228 , H01L21/28568 , H01L21/3215 , H01L27/10814 , H01L27/10852 , H01L27/14609 , H01L28/60 , H01L28/91
Abstract: A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode and which is in contact with the first electrode. The first electrode includes a first portion including an interface between the first electrode and the dielectric layer, the dielectric layer includes a second portion including the interface, and the first portion and the second portion each contain silicon. A concentration distribution of the silicon along a thickness direction of the first portion and the second portion includes a convex portion intersecting the interface.
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公开(公告)号:US20230261012A1
公开(公告)日:2023-08-17
申请号:US18297677
申请日:2023-04-10
Inventor: TAKAHIRO KOYANAGI
IPC: H01L27/146
CPC classification number: H01L27/14609 , H01L27/14636 , H01L28/90
Abstract: A semiconductor device includes: a first capacitor element that includes a first electrode, a second electrode, and a dielectric layer positioned between the first electrode and the second electrode; and a second capacitor element that includes a third electrode and an insulating layer positioned between the second electrode and the third electrode. The first capacitor element includes at least one first trench portion.
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5.
公开(公告)号:US20190081130A1
公开(公告)日:2019-03-14
申请号:US16109809
申请日:2018-08-23
Inventor: TAKAHIRO KOYANAGI , YUUKO TOMEKAWA
IPC: H01L49/02 , H01L27/146 , H01L27/30 , H01L21/3115
Abstract: A capacitor includes a first electrode, a second electrode facing the first electrode, and a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes. The dielectric layer contains at least one element selected from the group consisting of nitrogen and silicon.
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公开(公告)号:US20220336534A1
公开(公告)日:2022-10-20
申请号:US17809040
申请日:2022-06-27
Inventor: TAKAHIRO KOYANAGI , YUUKO TOMEKAWA
IPC: H01L27/30
Abstract: An imaging device includes at least one first pixel electrode, at least one second pixel electrode, a photoelectric converter continuously covering upper surfaces of the at least one first pixel electrode and the at least one second pixel electrode, a first counter electrode facing the at least one first pixel electrode, a second counter electrode facing the at least one second pixel electrode, and a sealing layer continuously covering upper surfaces of the first and second counter electrodes. In a plan view, a first portion of an upper surface of the photoelectric converter in an interelectrode region between the first counter electrode and the second counter electrode is more depressed than a second portion of the upper surface of the photoelectric converter in an overlap region overlapping the first counter electrode or the second counter electrode. The sealing layer is in contact with the photoelectric converter in the interelectrode region.
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公开(公告)号:US20210313399A1
公开(公告)日:2021-10-07
申请号:US17347460
申请日:2021-06-14
Inventor: SANSHIRO SHISHIDO , TAKAHIRO KOYANAGI , YUUKO TOMEKAWA , SHINICHI MACHIDA
Abstract: An imaging device includes a first pixel and a second pixel adjacent to the first pixel. Each of the first pixel and the second pixel includes a first electrode, a second electrode positioned on or above the first electrode and facing the first electrode, a photoelectric conversion layer positioned between the first electrode and the second electrode, and a first charge-blocking layer positioned between the first electrode and the photoelectric conversion layer. The first charge-blocking layer of the first pixel is separated from the first charge-blocking layer of the second pixel. The photoelectric conversion layer is disposed continuously to the first pixel and the second pixel. An area of the first charge-blocking layer of the first pixel is larger than an area of the first electrode of the first pixel in plan view.
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8.
公开(公告)号:US20190288018A1
公开(公告)日:2019-09-19
申请号:US16279157
申请日:2019-02-19
Inventor: YUUKO TOMEKAWA , TAKAHIRO KOYANAGI , HIROYUKI AMIKAWA , YASUYUKI ENDOH
IPC: H01L27/146
Abstract: An imaging device includes: a semiconductor substrate; a first photoelectric converter which is disposed in the semiconductor substrate; a second photoelectric converter different from the first photoelectric converter, which is disposed in the semiconductor substrate; a wiring layer disposed on or above the semiconductor substrate; and a capacitor which is disposed in the wiring layer and surrounds the first photoelectric converter in plan view. The capacitor includes a first electrode, a second electrode, and a dielectric layer disposed between the first electrode and the second electrode. The first electrode is connected to one of the first photoelectric converter and the second photoelectric converter.
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9.
公开(公告)号:US20190081096A1
公开(公告)日:2019-03-14
申请号:US16118220
申请日:2018-08-30
Inventor: YUUKO TOMEKAWA , TAKAHIRO KOYANAGI , TAKEYOSHI TOKUHARA
IPC: H01L27/146 , H01L49/02
Abstract: A capacitor includes a first electrode, a second electrode facing the first electrode, and a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes. The dielectric layer has a thickness of 10 nm or more. The first electrode contains carbon. At the interface between the dielectric layer and the first electrode, an elemental percentage of carbon is 30 atomic % or less.
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