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公开(公告)号:US20240276744A1
公开(公告)日:2024-08-15
申请号:US18626366
申请日:2024-04-04
Inventor: MORIO MITSUISHI , TAKAMICHI YOKOYAMA , HIROAKI IIJIMA
Abstract: An imaging apparatus includes a first electrode, a second electrode, a photoelectric conversion layer, a charge injection layer, and a charge accumulation region. The second electrode opposes the first electrode. The photoelectric conversion layer is located between the first electrode and the second electrode, contains a donor semiconductor material and an acceptor semiconductor material, and generates a pair of an electron and a hole. The charge injection layer is located between the first electrode and the photoelectric conversion layer. The charge accumulation region is electrically coupled to the second electrode and accumulates the hole. An ionization potential of the charge injection layer is less than or equal to an ionization potential of the acceptor semiconductor material. Electron affinity of the charge injection layer is less than or equal to electron affinity of the acceptor semiconductor material. Light transmittance of the charge injection layer is greater than or equal to 70%.
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公开(公告)号:US20230354626A1
公开(公告)日:2023-11-02
申请号:US18333609
申请日:2023-06-13
Inventor: TAKANORI DOI , TAKAMICHI YOKOYAMA , TAKAHIRO KOYANAGI
IPC: H10K39/32
CPC classification number: H10K39/32
Abstract: An imaging device includes a pixel electrode, a counter electrode facing the pixel electrode, and a photoelectric conversion layer located between the pixel electrode and the counter electrode. The counter electrode includes a first transparent electrode, a second transparent electrode, and an intermediate layer located between the first transparent electrode and the second transparent electrode. A material of the intermediate layer is different from a material of the first transparent electrode and different from a material of the second transparent electrode. The photoelectric conversion layer, the first transparent electrode, the intermediate layer, and the second transparent electrode are arranged in this order. The intermediate layer contains an insulating material as a major ingredient.
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公开(公告)号:US20230283927A1
公开(公告)日:2023-09-07
申请号:US18315514
申请日:2023-05-11
Inventor: TAKAMICHI YOKOYAMA , HIROAKI IIJIMA , MORIO MITSUISHI
IPC: H04N25/77 , H10K39/32 , H04N25/709 , H04N25/63
CPC classification number: H04N25/77 , H10K39/32 , H04N25/709 , H04N25/63
Abstract: An imaging device includes a plurality of pixels and a voltage supply circuit. Each of the plurality of pixels includes: a pixel electrode; a counter electrode; a photoelectric conversion layer located between the pixel electrode and the counter electrode; and a charge blocking layer located between the pixel electrode and the photoelectric conversion layer. The charge blocking layer contains an impurity and has a first surface facing the photoelectric conversion layer and a second surface facing the pixel electrode. The concentration of the impurity on the first surface is higher than the concentration of the impurity on the second surface. The voltage supply circuit supplies a first voltage between the counter electrode and the pixel electrode in a first period and supplies a second voltage different from the first voltage between the counter electrode and the pixel electrode in a second period.
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