公开(公告)号：US20240276744A1

公开(公告)日：2024-08-15

申请号：US18626366

申请日：2024-04-04

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： MORIO MITSUISHI ,  TAKAMICHI YOKOYAMA ,  HIROAKI IIJIMA

IPC: H10K30/85 ,  H10K39/32

CPC classification number: H10K30/85 ,  H10K39/32

Abstract: An imaging apparatus includes a first electrode, a second electrode, a photoelectric conversion layer, a charge injection layer, and a charge accumulation region. The second electrode opposes the first electrode. The photoelectric conversion layer is located between the first electrode and the second electrode, contains a donor semiconductor material and an acceptor semiconductor material, and generates a pair of an electron and a hole. The charge injection layer is located between the first electrode and the photoelectric conversion layer. The charge accumulation region is electrically coupled to the second electrode and accumulates the hole. An ionization potential of the charge injection layer is less than or equal to an ionization potential of the acceptor semiconductor material. Electron affinity of the charge injection layer is less than or equal to electron affinity of the acceptor semiconductor material. Light transmittance of the charge injection layer is greater than or equal to 70%.

公开(公告)号：US20230283927A1

公开(公告)日：2023-09-07

申请号：US18315514

申请日：2023-05-11

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TAKAMICHI YOKOYAMA ,  HIROAKI IIJIMA ,  MORIO MITSUISHI

IPC: H04N25/77 ,  H10K39/32 ,  H04N25/709 ,  H04N25/63

CPC classification number: H04N25/77 ,  H10K39/32 ,  H04N25/709 ,  H04N25/63

Abstract: An imaging device includes a plurality of pixels and a voltage supply circuit. Each of the plurality of pixels includes: a pixel electrode; a counter electrode; a photoelectric conversion layer located between the pixel electrode and the counter electrode; and a charge blocking layer located between the pixel electrode and the photoelectric conversion layer. The charge blocking layer contains an impurity and has a first surface facing the photoelectric conversion layer and a second surface facing the pixel electrode. The concentration of the impurity on the first surface is higher than the concentration of the impurity on the second surface. The voltage supply circuit supplies a first voltage between the counter electrode and the pixel electrode in a first period and supplies a second voltage different from the first voltage between the counter electrode and the pixel electrode in a second period.

公开(公告)号：US20250031512A1

公开(公告)日：2025-01-23

申请号：US18906209

申请日：2024-10-04

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： MORIO MITSUISHI ,  YASUO MIYAKE

IPC: H10K39/32

Abstract: A photoelectric conversion element includes: a photoelectric conversion layer converting light into signal charge, a first electrode collecting the signal charge, a second electrode, and a first charge blocking layer. The first charge blocking layer blocks charge of polarity opposite to the signal charge. A photocurrent characteristic of the element, with respect to a voltage applied between the first and second electrodes when the photoelectric conversion layer is irradiated with light, exhibits first and second voltage ranges. A photocurrent density at a first voltage in the first voltage range is less than that at a second voltage in the second voltage range. The first voltage is less than the second voltage. A change ratio of photocurrent density at the first voltage is less than that at the second voltage. An absolute value of a difference between the maximum and minimum voltages of the first voltage range is ≥0.5 V.

公开(公告)号：US20250030963A1

公开(公告)日：2025-01-23

申请号：US18905137

申请日：2024-10-02

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YASUO MIYAKE ,  MORIO MITSUISHI

IPC: H04N25/772 ,  H04N25/57

Abstract: An imaging device includes a pixel that includes a photoelectric converter converting light into a signal charge and a charge accumulator accumulating the signal charge and outputs a pixel signal according to an amount of the signal charge accumulated in the charge accumulator, an AD conversion circuit performing AD conversion of the pixel signal output from the pixel, and a control circuit setting the number of gradations of digital output of the AD conversion. The photoelectric converter has photoelectric conversion characteristics such that photoelectric conversion efficiency changes according to a potential difference between a counter electrode and a pixel electrode. Linearity of a magnitude of the pixel signal with respect to an amount of light incident on the photoelectric converter changes depending on a voltage VITO supplied from a voltage supply circuit to the pixel. The control circuit changes the number of gradations in accordance with the voltage VITO.