公开(公告)号：US20150281620A1

公开(公告)日：2015-10-01

申请号：US14740113

申请日：2015-06-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： MANABU USUDA ,  YUTAKA HIROSE ,  YOSHIHISA KATO ,  NOBUKAZU TERANISHI

IPC: H04N5/378 ,  H01L31/107 ,  H04N5/357 ,  H01L27/146

CPC classification number: H04N5/378 ,  G01J1/44 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/14634 ,  H01L27/14665 ,  H01L31/107 ,  H01L2924/381 ,  H04N5/357 ,  H04N5/361 ,  H04N5/369 ,  H04N5/37455

Abstract: A semiconductor photodetector has at least one unit pixel having a photoelectric conversion part, a charge storage part, and a detection circuit. The photoelectric conversion part includes a charge multiplication region in which incident light is converted into a charge, and the charge is multiplied by avalanche multiplication. The charge storage part is connected to the photoelectric conversion part and stores a signal charge from the photoelectric conversion part. The detection circuit is connected to the charge storage part, converts the signal charge stored in the charge storage part into a voltage, passes the voltage through an amplifier to amplify the voltage, and outputs the amplified voltage.

Abstract translation: 半导体光电检测器具有至少一个具有光电转换部分，电荷存储部分和检测电路的单位像素。 光电转换部包括入射光转换为电荷的电荷倍增区域，电荷乘以雪崩倍增。 电荷存储部分连接到光电转换部分并存储来自光电转换部分的信号电荷。 检测电路连接到电荷存储部分，将存储在电荷存储部分中的信号电荷转换为电压，使电压通过放大器放大，并输出放大的电压。

公开(公告)号：US20210335867A1

公开(公告)日：2021-10-28

申请号：US17370012

申请日：2021-07-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHOTA YAMADA ,  YUTAKA HIROSE

IPC: H01L27/146 ,  H04N5/369

Abstract: An imaging device includes: one or more pixels, each of the one or more pixels including a photoelectric converter including a first electrode, a second electrode, a photoelectric conversion layer that converts incident light into a signal charge, and a blocking layer; and a charge accumulation region that is coupled to the second electrode, and that accumulates the signal charge. An energy barrier of the blocking layer against migration of a charge having an opposite polarity to a polarity of the signal charge from the second electrode to the photoelectric conversion layer is larger than or equal to 1.8 eV, and an energy barrier of the blocking layer against migration of the charge from the photoelectric conversion layer to the second electrode is smaller than or equal to 1.6 eV.

公开(公告)号：US20190238767A1

公开(公告)日：2019-08-01

申请号：US16377855

申请日：2019-04-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIAKI SATOU ,  SHOTA YAMADA ,  MASASHI MURAKAMI ,  YUTAKA HIROSE

IPC: H04N5/361 ,  H01L27/146 ,  H04N5/369

CPC classification number: H04N5/361 ,  H01L27/146 ,  H01L27/14612 ,  H01L27/14643 ,  H04N5/359 ,  H04N5/369 ,  H04N5/374

Abstract: An imaging device includes a semiconductor substrate that includes a first impurity region having n-type conductivity; a photoelectric converter that is electrically connected to the first impurity region and that converts light into charges; a capacitor that includes a first terminal and a second terminal, the first terminal being electrically connected to the first impurity region; and a voltage supply circuit electrically connected to the second terminal. The voltage supply circuit is configured to generate a first voltage and a second voltage different from the first voltage. The first impurity region accumulates positive charges generated by the photoelectric converter.

公开(公告)号：US20170146790A1

公开(公告)日：2017-05-25

申请号：US15426125

申请日：2017-02-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YUTAKA HIROSE ,  KEISUKE YAZAWA ,  SHINZO KOYAMA ,  YOSHIHISA KATO ,  HIDETO MOTOMURA

IPC: G02B21/36 ,  G02B21/26 ,  G02B21/06 ,  G01N21/84 ,  H04N5/349

CPC classification number: G02B21/367 ,  G01N21/84 ,  G01N2201/0627 ,  G02B21/06 ,  G02B21/086 ,  G02B21/26 ,  G02B2207/123 ,  G06T1/00 ,  H04N5/349

Abstract: An image acquisition device includes an optical system, an illumination angle adjustment mechanism, and a stage. The optical system has a lens and a light source disposed in the focal plane of the lens, and generates a collimated illumination light. The illumination angle adjustment mechanism is configured so as to be able to change the irradiation direction of the illumination light with respect to an object. A module is detachably loaded on a stage. The module includes the object and an image sensor which are integrated such that the illumination light transmitted through the object is incident on the image sensor. The stage has a circuit for receiving an output of the image sensor in a state where the module is loaded on the stage.

公开(公告)号：US20160056577A1

公开(公告)日：2016-02-25

申请号：US14823659

申请日：2015-08-11

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YUTAKA HIROSE ,  YOSHIHISA KATO ,  HIROYUKI MORI ,  TAICHI SATO ,  YOSHIHIDE SAWADA ,  TSUYOSHI TANAKA

IPC: H01R13/64 ,  H01R13/73 ,  F16M11/04 ,  H04N5/372 ,  F16M11/10 ,  H01R13/639 ,  H04N1/031

CPC classification number: H01R13/64 ,  B01L9/52 ,  B01L2300/0645 ,  B01L2300/0654 ,  B01L2300/0822 ,  F16M11/046 ,  F16M11/10 ,  G02B21/0008 ,  G02B21/34 ,  H01L27/14623 ,  H01L27/14818 ,  H01R13/639 ,  H01R13/73 ,  H04N1/0315 ,  H04N1/0318 ,  H04N5/2257 ,  H04N5/372

Abstract: A socket includes a first base member that includes a module mount unit allowing a module including an imaging device and an object to be placed thereon and an electric connector that electrically connects the imaging device to an external apparatus, a second base member having an opening, and an engagement unit that causes the first base member to be engaged with the second base member under a condition that the module placed on the module mount unit is sandwiched by the first and second base members. When the first base member is engaged with the second base member by the engagement unit under a condition that the module placed on the module mount unit is sandwiched by the first base member and the second base member, the electric connector is electrically connected to the imaging device, and the object receives illumination light from a light source through the opening.

Abstract translation: 插座包括：第一基座构件，其包括模块安装单元，其允许包括成像装置和物体的模块放置在其上;以及电连接器，其将所述成像装置电连接到外部装置;第二基座构件， 以及接合单元，其使得所述第一基底构件在被放置在所述模块安装单元上的所述模块被所述第一和第二基底构件夹持的状态下与所述第二基底构件接合。 当第一基座部件通过接合单元与位于模块安装单元上的模块夹在第一基座部件和第二基部部件之间的条件下与第二基部部件接合时，电连接器电连接到成像部件 装置，物体通过开口接收来自光源的照明光。

公开(公告)号：US20150021731A1

公开(公告)日：2015-01-22

申请号：US14511737

申请日：2014-10-10

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： KEISUKE YAZAWA ,  YUTAKA HIROSE ,  YOSHIHISA KATO

IPC: H01L27/146 ,  H01L31/0224 ,  H01L31/109 ,  H01L31/108

CPC classification number: H01L27/14649 ,  B82Y20/00 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687 ,  H01L29/78 ,  H01L31/022408 ,  H01L31/035236 ,  H01L31/108 ,  H01L31/109

Abstract: The solid-state imaging device according to the present invention includes a semiconductor substrate including an imaging region and a peripheral circuit region, a wiring layer formed on the semiconductor substrate, a plurality of pixel electrodes arranged in a matrix on the wiring layer above the imaging region, a photoelectric conversion film formed on the wiring layer and the plurality of pixel electrodes above the imaging region, and an upper electrode formed on the photoelectric conversion film. The photoelectric conversion film has a laminated structure in which a plurality of well layers and a plurality of barrier layers are alternately laminated, the well layers made of a first semiconductor having a fundamental absorption edge in a wavelength region longer than a near-infrared light wavelength, and the barrier layers made of an insulator or a second semiconductor having a band gap wider than that of the first semiconductor.

Abstract translation: 根据本发明的固态成像装置包括：半导体衬底，其包括成像区域和外围电路区域;形成在半导体衬底上的布线层;多个像素电极，其布置在阵列上方的矩阵中，高于成像 形成在配线层上的光电转换膜和成像区域上方的多个像素电极以及形成在光电转换膜上的上电极。 光电转换膜具有交替层叠多个阱层和多个势垒层的层叠结构，由具有比近红外光波长长的波长区域的基本吸收边缘的第一半导体构成的阱层 并且由具有比第一半导体宽的带隙的绝缘体或第二半导体制成的阻挡层。

公开(公告)号：US20150256777A1

公开(公告)日：2015-09-10

申请号：US14714366

申请日：2015-05-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： MOTONORI ISHII ,  YOSHIYUKI MATSUNAGA ,  YUTAKA HIROSE

IPC: H04N5/363 ,  H04N5/374 ,  H04N5/378

CPC classification number: H04N5/363 ,  H04N5/3742 ,  H04N5/3745 ,  H04N5/378

Abstract: A solid-state imaging apparatus has: a signal readout circuit including a charge storage region connected to a photoelectric conversion region, and a reset transistor connected at one of source and drain to the charge storage region; and a negative feedback circuit that feeds back an output of the signal readout circuit in a negative feedback manner to the other of the source and drain of the reset transistor. A reset operation for discharging a charge stored in the charge storage region includes a first period in which the negative feedback circuit is OFF and a second period which occurs after the first period and in which the negative feedback circuit is ON. In the first period, the reset transistor changes from OFF to ON and then to OFF. In the second period, such a reset transistor control voltage is applied that makes the reset transistor to gradually change to ON.

Abstract translation: 固态成像装置具有：包括连接到光电转换区域的电荷存储区域的信号读出电路和连接到源极和漏极之间的电荷存储区域的复位晶体管; 以及负反馈电路，以负反馈方式将信号读出电路的输出反馈到复位晶体管的源极和漏极中的另一个。 用于对存储在电荷存储区域中的电荷进行放电的复位动作包括负反馈电路为OFF的第一期间和在第一期间后发生的负反馈电路为ON的第二期间。 在第一个周期中，复位晶体管从OFF变为ON，然后变为OFF。 在第二时段中，施加这样的复位晶体管控制电压，使得复位晶体管逐渐变为导通。