公开(公告)号：US20230171976A1

公开(公告)日：2023-06-01

申请号：US18150835

申请日：2023-01-06

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YUUKO TOMEKAWA ,  SHOTA YAMADA

IPC: H10K39/32

CPC classification number: H10K39/32

Abstract: An imaging device includes a first electrode, a second electrode, a photoelectric conversion layer, and a charge storage region. The photoelectric conversion layer is located between the first electrode and the second electrode. The charge storage region is electrically connected to the first electrode. An area of the charge storage region in plan view is smaller than or equal to 0.01 µm2.

公开(公告)号：US20190035842A1

公开(公告)日：2019-01-31

申请号：US16038896

申请日：2018-07-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： JUNJI HIRASE ,  YOSHINORI TAKAMI ,  SHOTA YAMADA ,  YOSHIHIRO SATO ,  YOSHIAKI SATOU

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14806 ,  H04N5/3575 ,  H04N5/363 ,  H04N5/3745 ,  H04N5/378

Abstract: An imaging device includes a semiconductor substrate having a surface, the semiconductor substrate including: a first layer of a first conductivity type; a second layer of a second conductivity type, the second layer being closer to the surface; and a pixel including: a photoelectric converter configured to convert light into charge; a first diffusion region of the first conductivity type, the first diffusion region facing the first layer via the second layer, configured to store at least a part of the charge; and a second diffusion region being a diffusion region closest to the first diffusion region among diffusion regions of the first conductivity type, the diffusion regions facing the first layer via the second layer. A distance between the second diffusion region and the first layer is equal to or less than 1.5 times a distance between the second diffusion region and the first diffusion region.

公开(公告)号：US20190115378A1

公开(公告)日：2019-04-18

申请号：US16145008

申请日：2018-09-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： AKIO NAKAJUN ,  SHOTA YAMADA

IPC: H01L27/146 ,  H01L51/44

Abstract: An imaging device includes a semiconductor substrate having a first surface; a microlens located above the first surface of the semiconductor substrate; and one or more photoelectric converters located between the first surface of the semiconductor substrate and the microlens, each of the one or more photoelectric converters including a first electrode, a second electrode located closer to the microlens than the first electrode is, and a photoelectric conversion layer that is located between the first electrode and the second electrode and that converts light into electric charges, wherein a focal point of the microlens is located below a lowermost surface of the photoelectric conversion layer of a first photoelectric converter, the first photoelectric converter being located closest to the first surface of the semiconductor substrate among the one or more photoelectric converters.

公开(公告)号：US20210335867A1

公开(公告)日：2021-10-28

申请号：US17370012

申请日：2021-07-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHOTA YAMADA ,  YUTAKA HIROSE

IPC: H01L27/146 ,  H04N5/369

Abstract: An imaging device includes: one or more pixels, each of the one or more pixels including a photoelectric converter including a first electrode, a second electrode, a photoelectric conversion layer that converts incident light into a signal charge, and a blocking layer; and a charge accumulation region that is coupled to the second electrode, and that accumulates the signal charge. An energy barrier of the blocking layer against migration of a charge having an opposite polarity to a polarity of the signal charge from the second electrode to the photoelectric conversion layer is larger than or equal to 1.8 eV, and an energy barrier of the blocking layer against migration of the charge from the photoelectric conversion layer to the second electrode is smaller than or equal to 1.6 eV.

公开(公告)号：US20190238767A1

公开(公告)日：2019-08-01

申请号：US16377855

申请日：2019-04-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIAKI SATOU ,  SHOTA YAMADA ,  MASASHI MURAKAMI ,  YUTAKA HIROSE

IPC: H04N5/361 ,  H01L27/146 ,  H04N5/369

CPC classification number: H04N5/361 ,  H01L27/146 ,  H01L27/14612 ,  H01L27/14643 ,  H04N5/359 ,  H04N5/369 ,  H04N5/374

Abstract: An imaging device includes a semiconductor substrate that includes a first impurity region having n-type conductivity; a photoelectric converter that is electrically connected to the first impurity region and that converts light into charges; a capacitor that includes a first terminal and a second terminal, the first terminal being electrically connected to the first impurity region; and a voltage supply circuit electrically connected to the second terminal. The voltage supply circuit is configured to generate a first voltage and a second voltage different from the first voltage. The first impurity region accumulates positive charges generated by the photoelectric converter.