公开(公告)号：US20170146790A1

公开(公告)日：2017-05-25

申请号：US15426125

申请日：2017-02-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YUTAKA HIROSE ,  KEISUKE YAZAWA ,  SHINZO KOYAMA ,  YOSHIHISA KATO ,  HIDETO MOTOMURA

IPC: G02B21/36 ,  G02B21/26 ,  G02B21/06 ,  G01N21/84 ,  H04N5/349

CPC classification number: G02B21/367 ,  G01N21/84 ,  G01N2201/0627 ,  G02B21/06 ,  G02B21/086 ,  G02B21/26 ,  G02B2207/123 ,  G06T1/00 ,  H04N5/349

Abstract: An image acquisition device includes an optical system, an illumination angle adjustment mechanism, and a stage. The optical system has a lens and a light source disposed in the focal plane of the lens, and generates a collimated illumination light. The illumination angle adjustment mechanism is configured so as to be able to change the irradiation direction of the illumination light with respect to an object. A module is detachably loaded on a stage. The module includes the object and an image sensor which are integrated such that the illumination light transmitted through the object is incident on the image sensor. The stage has a circuit for receiving an output of the image sensor in a state where the module is loaded on the stage.

公开(公告)号：US20150021731A1

公开(公告)日：2015-01-22

申请号：US14511737

申请日：2014-10-10

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： KEISUKE YAZAWA ,  YUTAKA HIROSE ,  YOSHIHISA KATO

IPC: H01L27/146 ,  H01L31/0224 ,  H01L31/109 ,  H01L31/108

CPC classification number: H01L27/14649 ,  B82Y20/00 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687 ,  H01L29/78 ,  H01L31/022408 ,  H01L31/035236 ,  H01L31/108 ,  H01L31/109

Abstract: The solid-state imaging device according to the present invention includes a semiconductor substrate including an imaging region and a peripheral circuit region, a wiring layer formed on the semiconductor substrate, a plurality of pixel electrodes arranged in a matrix on the wiring layer above the imaging region, a photoelectric conversion film formed on the wiring layer and the plurality of pixel electrodes above the imaging region, and an upper electrode formed on the photoelectric conversion film. The photoelectric conversion film has a laminated structure in which a plurality of well layers and a plurality of barrier layers are alternately laminated, the well layers made of a first semiconductor having a fundamental absorption edge in a wavelength region longer than a near-infrared light wavelength, and the barrier layers made of an insulator or a second semiconductor having a band gap wider than that of the first semiconductor.

Abstract translation: 根据本发明的固态成像装置包括：半导体衬底，其包括成像区域和外围电路区域;形成在半导体衬底上的布线层;多个像素电极，其布置在阵列上方的矩阵中，高于成像 形成在配线层上的光电转换膜和成像区域上方的多个像素电极以及形成在光电转换膜上的上电极。 光电转换膜具有交替层叠多个阱层和多个势垒层的层叠结构，由具有比近红外光波长长的波长区域的基本吸收边缘的第一半导体构成的阱层 并且由具有比第一半导体宽的带隙的绝缘体或第二半导体制成的阻挡层。