公开(公告)号：US20170170288A1

公开(公告)日：2017-06-15

申请号：US15434022

申请日：2017-02-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TSUTOMU KIYOSAWA ,  YASUYUKI YANASE ,  KAZUHIRO KAGAWA

IPC: H01L29/423 ,  H01L29/04 ,  H01L29/66 ,  H01L29/78 ,  H01L21/04 ,  H01L29/16 ,  H01L29/10

CPC classification number: H01L29/4236 ,  H01L21/0485 ,  H01L21/049 ,  H01L21/205 ,  H01L21/3247 ,  H01L23/544 ,  H01L29/045 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7813 ,  H01L29/7828 ,  H01L2223/54426 ,  H01L2223/5446

Abstract: A semiconductor device includes a substrate having a main surface inclined in an off-direction from a {0001} surface, a semiconductor layer, and an epitaxial layer. The semiconductor layer includes a trench. Where an upstream side is an off-angle upstream side and a downstream side is an off-angle downstream side in a direction with the off-direction projected on the main surface of the substrate, a side wall of the trench includes first and second side wall portions facing each other and each crossing the off-direction of the substrate. The first side wall portion is situated closer to the off-angle upstream side than the second side wall portion.