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公开(公告)号：US12144092B2
公开(公告)日：2024-11-12
申请号：US17603023
申请日：2020-07-28
Inventor： Kazuki Maeda , Daisuke Hosokawa , Yoshiharu Oomori , Koji Yoshino , Fumitaka Ogasawara , Takashi Uno
Abstract: A microwave treatment device of the present disclosure includes heating chamber (1) for accommodating object (2) to be heated, microwave generator (3), heater (7), power feeder (4), detector (5), and controller (6). Microwave generator (3) generates microwaves. Heater (7) includes a heat source other than the microwaves and heats an inside of heating chamber (1). Power feeder (4) supplies the heating chamber with the microwaves. Detector (5) detects reflected power from power feeder (4). Controller (6) controls heater (7) and microwave generator (3). When heater (7) carries out heating, Controller (6) causes microwave generator (3) to generate the microwaves in heating by heater (7). The microwaves have output power such that the reflected power at a level detectable by detector (5) returns. By present disclosure, by understanding progress of cooking, a heating target can be appropriately cooked.
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公开(公告)号：US11937360B2
公开(公告)日：2024-03-19
申请号：US17251941
申请日：2019-08-01
Inventor： Takashi Uno , Daisuke Hosokawa , Fumitaka Ogasawara , Mikio Fukui , Koji Yoshino , Yoshiharu Oomori
Abstract: A high frequency heating apparatus (1A) includes the following components: a first electrode (11) that is flat; a plurality of flat second electrodes (12) that are flat; a high-frequency power supply (20); a matching unit (30); a controller (40); and an electric field regulator (50). The second electrodes (12) are placed opposite to the first electrode (11). The high-frequency power supply (20) applies a high-frequency voltage to the first electrode (11). The matching unit (30) is placed between the first electrode (11) and the high-frequency power supply (20), and is impedance-matched with the high-frequency power supply (20). The controller (40) controls the high-frequency power supply (20). The electric field regulator (50) individually adjusts the electric field strengths in a plurality of regions located between first electrode (11) and the second electrodes (12). This aspect can reduce uneven heating.
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公开(公告)号：US09668338B2
公开(公告)日：2017-05-30
申请号：US14404102
申请日：2014-02-28
Inventor： Takashi Uno , Kazuhiro Yahata
IPC: H05K1/18 , H05K1/02 , H01L23/66 , H05K7/00 , H01L23/02 , H01L23/48 , H01L23/52 , H01L23/043 , H01L23/047
CPC classification number: H05K1/0237 , H01L23/043 , H01L23/047 , H01L23/66 , H01L2223/6611 , H01L2223/6655 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/49175 , H01L2225/06548 , H01L2924/3011 , H01L2924/30111 , H05K1/18 , H05K2201/10166 , H05K2201/10689 , H01L2924/00014 , H01L2924/00 , H01L2224/49111
Abstract: A semiconductor device is provided that is inexpensively manufactured with variation in high-frequency characteristics suppressed. Internal matching circuit boards are disposed on at least one signal transmission path of an input-side signal transmission path between an input terminal and a semiconductor element and an output-side signal transmission path between the semiconductor element and an output terminal and is provided for matching at least between output impedance of an external circuit connected to the input terminal and input impedance of the semiconductor device or between input impedance of an external circuit connected to the output terminal and output impedance of the semiconductor device, and components are electrically connected by at least one wire causing a change exceeding an allowable value in high-frequency characteristics of the semiconductor device due to a change in wire length and are disposed in contact with each other inside a package.
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公开(公告)号：US12177956B2
公开(公告)日：2024-12-24
申请号：US17422824
申请日：2020-02-03
Inventor： Yoshiharu Oomori , Daisuke Hosokawa , Fumitaka Ogasawara , Mikio Fukui , Koji Yoshino , Takashi Uno
Abstract: A microwave treatment device includes a heating chamber for accommodating a heating target, a microwave generator, a feeder, a detector, and a controller. The microwave generator generates a microwave having a frequency in a specified frequency band. The feeder radiates the microwave inside the heating chamber. The detector detects a reflected microwave power reflected from the heating chamber. The controller causes the microwave generator to execute a frequency sweeping in the specified frequency band, and controls the microwave generator according to a temporal change in a frequency characteristic of the reflected microwave power. The temporal change in the frequency characteristic of the reflected microwave power is based on the frequency of the microwave, a level of the reflected microwave power, and a time passed from a start of heating. Thus, it is possible to accurately recognize the progress of cooking while heating the object.
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Patent Agency Ranking
公开(公告)号：US20150216035A1
公开(公告)日：2015-07-30
申请号：US14404102
申请日：2014-02-28
Inventor： Takashi Uno , Kazuhiro Yahata
CPC classification number: H05K1/0237 , H01L23/043 , H01L23/047 , H01L23/66 , H01L2223/6611 , H01L2223/6655 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/49175 , H01L2225/06548 , H01L2924/3011 , H01L2924/30111 , H05K1/18 , H05K2201/10166 , H05K2201/10689 , H01L2924/00014 , H01L2924/00 , H01L2224/49111
Abstract: A semiconductor device is provided that is inexpensively manufactured with variation in high-frequency characteristics suppressed. Internal matching circuit boards are disposed on at least one signal transmission path of an input-side signal transmission path between an input terminal and a semiconductor element and an output-side signal transmission path between the semiconductor element and an output terminal and is provided for matching at least between output impedance of an external circuit connected to the input terminal and input impedance of the semiconductor device or between input impedance of an external circuit connected to the output terminal and output impedance of the semiconductor device, and components are electrically connected by at least one wire causing a change exceeding an allowable value in high-frequency characteristics of the semiconductor device due to a change in wire length and are disposed in contact with each other inside a package.
Abstract translation: 提供了一种低成本地制造的半导体器件，其抑制了高频特性的变化。 内部匹配电路板设置在输入端和半导体元件之间的输入侧信号传输路径的至少一个信号传输路径和半导体元件与输出端之间的输出侧信号传输路径之间，并被提供用于匹配 至少在连接到输入端子的外部电路的输出阻抗和半导体器件的输入阻抗之间或连接到输出端子的外部电路的输入阻抗和半导体器件的输出阻抗之间，并且部件至少电连接 一根导线由于导线长度的变化导致超过半导体器件的高频特性的容许值的变化，并且在封装内彼此接触。
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公开(公告)号：US12225654B2
公开(公告)日：2025-02-11
申请号：US17261920
申请日：2019-09-11
Inventor： Mikio Fukui , Takashi Uno , Fumitaka Ogasawara , Motoyoshi Iwata , Shinji Takano , Daisuke Hosokawa , Masayoshi Hiramoto
Abstract: A microwave heating device includes: a heating chamber for accommodating a heating target object, a microwave generator for generating a microwave, and a coaxial connector. The coaxial connector includes a center conductor, an insulator, and an external conductor. The center conductor is connected to an output terminal of the microwave generator. An air gap is defined between the center conductor and the insulator.
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公开(公告)号：US12144091B2
公开(公告)日：2024-11-12
申请号：US17251955
申请日：2019-07-25
Inventor： Takashi Uno , Fumitaka Ogasawara , Motoyoshi Iwata , Shinji Takano , Mikio Fukui , Daisuke Hosokawa , Masayoshi Hiramoto
Abstract: A high-frequency heating apparatus includes: a heating chamber for accommodating a load; a microwave source; at least one radiator; a temperature detector; and a controller. The microwave source generates a microwave and adjusts the frequency and output of the microwave. The at least one radiator radiates a microwave into the heating chamber. The temperature detector detects the temperature in the heating chamber. The controller causes the microwave source to adjust the output of the microwave based on the temperature profile that defines the temperature change in the load, and the temperature in the heating chamber. According to this aspect, food can be heated in accordance with the temperature profile appropriate for the cooking recipe, thereby ensuring the quality of cooked food.
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公开(公告)号：US12207376B2
公开(公告)日：2025-01-21
申请号：US17294411
申请日：2019-10-25
Inventor： Daisuke Hosokawa , Takashi Uno , Fumitaka Ogasawara , Koji Yoshino
Abstract: A high-frequency heating apparatus according to an embodiment of the present disclosure includes a heating chamber, an electrode, a high-frequency power supply, at least one matching element, and a controller. The heating chamber accommodates a heating target. The high-frequency power supply applies a high-frequency voltage to the electrode. The impedance matcher includes at least one matching element having a matching constant that is variable. The controller stops the high-frequency power supply to complete heating based on a temporal change of the matching constant of the at least one matching element. In this embodiment, a heating target can be heated efficiently.
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公开(公告)号：US12048082B2
公开(公告)日：2024-07-23
申请号：US17290724
申请日：2019-11-20
Inventor： Takashi Uno , Mikio Fukui , Koji Yoshino , Daisuke Hosokawa
Abstract: A high frequency heating apparatus of the present disclosure includes a first electrode (11), a second electrode (12), a high frequency power supply, a position adjuster (20), and a controller. The second electrode (12) is disposed facing the first electrode (11). The high frequency power supply supplies high frequency power to the first electrode (11) or the second electrode (12). The position adjuster (20) adjusts the position of the first electrode (11). The controller controls the position adjuster (20). The position adjuster (20) includes a weight (21), one or more connecting lines (22), one or more pulleys (23), and one or more drive units (24). The one or more connecting lines (22) connect the weight (21) and the first electrode (11). The one or more pulleys (23) support the one or more connecting lines (22). The one or more drive units (24) are attached to the one or more pulleys (23) and drive the one or more pulleys (23). In this embodiment, a heating target can be heated efficiently.
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