公开(公告)号：US20170006241A1

公开(公告)日：2017-01-05

申请号：US15190198

申请日：2016-06-23

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SANSHIRO SHISHIDO ,  RYOTA SAKAIDA ,  YOSHIYUKI MATSUNAGA

IPC: H04N5/357 ,  H04N5/378 ,  H04N5/372

CPC classification number: H04N5/378 ,  H04N5/3698 ,  H04N5/374

Abstract: An imaging device includes a photoelectric converter that generates charge; a first charge transfer channel having a first end electrically connected to the photoelectric converter and a second end, and transferring the charge in a direction from the first end to the second end; a second charge transfer channel diverging from the first charge transfer channel at a first position and transferring a first part of the charge; a third charge transfer channel diverging from the first charge transfer channel at a second position different from the first position in the direction and transferring a part of the second part of the charge; and first and second charge accumulators that accumulate at least a part of the first and second part of the charge respectively. The imaging device does not include a gate that switches between cutoff and transfer of charge, in the first charge transfer channel.

Abstract translation: 成像装置包括产生电荷的光电转换器; 第一电荷转移通道，其具有电连接到所述光电转换器的第一端和第二端，并且在从所述第一端到所述第二端的方向上传送所述电荷; 第二电荷转移通道在第一位置处从第一电荷转移通道发散并转移电荷的第一部分; 在与所述方向上的所述第一位置不同的第二位置处从所述第一电荷转移通道发散的第三电荷转移通道，并且传送所述电荷的第二部分的一部分; 以及分别累积电荷的第一和第二部分的至少一部分的第一和第二电荷累加器。 在第一电荷转移通道中，成像装置不包括在截止和电荷转移之间切换的栅极。

公开(公告)号：US20250081713A1

公开(公告)日：2025-03-06

申请号：US18950278

申请日：2024-11-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHUNSUKE ISONO ,  YUUKO TOMEKAWA ,  JUNJI HIRASE ,  RYOTA SAKAIDA

IPC: H10K39/32

Abstract: A method for manufacturing an imaging device includes forming a photoelectric conversion film such that a ratio of an overlapping area of the photoelectric conversion film and a support substrate in plan view to an area of the support substrate in plan view is greater than 0% and less than 100%. The method includes performing first etching to reduce an area of the photoelectric conversion film in plan view.

公开(公告)号：US20230232644A1

公开(公告)日：2023-07-20

申请号：US18183049

申请日：2023-03-13

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHUNSUKE ISONO ,  YUUKO TOMEKAWA ,  RYOTA SAKAIDA

IPC: H10K39/32

CPC classification number: H10K39/32

Abstract: An imaging device includes a photoelectric conversion film and an electrode. The photoelectric conversion film converts light to charge. The electrode collects the charge. The electrode includes two or more layers. The two or more layers include a first layer containing tantalum nitride. An uppermost layer among the two or more layers contains a metal nitride.

公开(公告)号：US20210218912A1

公开(公告)日：2021-07-15

申请号：US17213597

申请日：2021-03-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHUNSUKE ISONO ,  TATSUNORI MOMOSE ,  RYOTA SAKAIDA

IPC: H04N5/341 ,  H04N5/355 ,  H01L27/146

Abstract: An imaging device includes: pixels that are disposed in a row direction and a column direction and that include a first pixel and a second pixel adjacent to the first pixel along the row direction; a shield electrode located between the first pixel and the second pixel; a first shield via that extends from the shield electrode. The first pixel includes: a first photoelectric conversion layer that converts incident light to generate charge; and a first pixel electrode that collects the charge generated thereby. The second pixel includes: a second photoelectric conversion layer that converts incident light to generate charge; and a second pixel electrode that collects the charge generated thereby. The shield electrode is electrically isolated from the first pixel electrode and the second pixel electrode, and the first shield via is located between the first pixel electrode and the second pixel electrode in a plan view.

公开(公告)号：US20240423004A1

公开(公告)日：2024-12-19

申请号：US18822525

申请日：2024-09-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TAKANORI DOI ,  JUNJI HIRASE ,  RYOTA SAKAIDA ,  SHUNSUKE ISONO ,  YUUKO TOMEKAWA

IPC: H10K39/32

Abstract: An image sensor includes a photoelectric conversion film, an upper electrode, and a connector. The upper electrode is located on or above the photoelectric conversion film. The connector is electrically connected to the upper electrode. On a first section parallel to a direction perpendicular to the photoelectric conversion film, the connector is in contact with the side surface of the photoelectric conversion film. On the first section, the upper electrode extends to a position outward of the outer edge of the upper surface of the photoelectric conversion film.

公开(公告)号：US20180083004A1

公开(公告)日：2018-03-22

申请号：US15698019

申请日：2017-09-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIHIRO SATO ,  RYOTA SAKAIDA ,  SATOSHI SHIBATA ,  TAIJI NODA

IPC: H01L27/092 ,  H01L27/146

CPC classification number: H01L27/0922 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14643

Abstract: An imaging device includes: a semiconductor substrate; a first insulating layer covering a surface of the semiconductor substrate, the first insulating layer including first and second portions, a thickness of the first portion being greater than a thickness of the second portion; and an imaging cell. The imaging cell includes: a first transistor including a first gate insulating layer and an impurity region in the semiconductor substrate as one of a source and a drain; a second transistor including a gate electrode and a second gate insulating layer; and a photoelectric converter electrically connected to the gate electrode and the impurity region. The first portion covers a portion of the impurity region, the portion being exposed to the surface of the semiconductor substrate. The first gate insulating layer is a part of the first portion. The second gate insulating layer is a part of the second portion.