公开(公告)号：US20190163363A1

公开(公告)日：2019-05-30

申请号：US15867719

申请日：2018-01-11

Applicant: PHISON ELECTRONICS CORP.

Inventor： Wei Lin ,  An-Cheng Liu ,  Lih Yuarn Ou ,  Szu-Wei Chen

IPC: G06F3/06 ,  G11C16/26 ,  G06F11/10 ,  G11C29/52

CPC classification number: G06F3/061 ,  G06F3/0619 ,  G06F3/0658 ,  G06F3/0659 ,  G06F3/0679 ,  G06F11/1068 ,  G06F11/1072 ,  G11C16/0483 ,  G11C16/26 ,  G11C29/028 ,  G11C29/52 ,  G11C2029/0407

Abstract: A data accessing method, a memory controlling circuit unit and a memory storage device are provided. The method includes: reading a first physical programming unit by using a first read voltage to obtain first data; reading the first physical programming unit by using a second read voltage to obtain second data; inputting a first state parameter corresponding to the first data and a second state parameter corresponding to the second data into a numerical calculation engine, and determining a third reading voltage for reading the first physical programming unit by the numerical calculation engine.

公开(公告)号：US20200035306A1

公开(公告)日：2020-01-30

申请号：US16120313

申请日：2018-09-03

Applicant: PHISON ELECTRONICS CORP.

Inventor： Wei Lin ,  Yu-Cheng Hsu ,  Tsai-Hao Kuo ,  Szu-Wei Chen ,  Lih Yuarn Ou ,  Hsiao-Yi Lin

IPC: G11C16/26 ,  G06F11/10 ,  G11C29/52 ,  G06F3/06 ,  G11C16/04

Abstract: A voltage adjusting method, a memory controlling circuit unit and a memory storage device are provided. The method includes: reading a first physical programming unit in a first physical programming unit group to obtain first data; correcting the first data according to a first error check and correction code corresponding to the first data to obtain first corrected data; reading a second physical programming unit in the first physical programming unit group to obtain second data; and adjusting a first read voltage for reading a first memory cell to a second read voltage according to the first data, the first corrected data, and the second data.

公开(公告)号：US10679707B2

公开(公告)日：2020-06-09

申请号：US16120313

申请日：2018-09-03

Applicant: PHISON ELECTRONICS CORP.

Inventor： Wei Lin ,  Yu-Cheng Hsu ,  Tsai-Hao Kuo ,  Szu-Wei Chen ,  Lih Yuarn Ou ,  Hsiao-Yi Lin

IPC: G06F3/01 ,  G11C16/26 ,  G06F11/10 ,  G11C29/52 ,  G06F3/06 ,  G11C16/04 ,  G11C11/56

Abstract: A voltage adjusting method, a memory controlling circuit unit and a memory storage device are provided. The method includes: reading a first physical programming unit in a first physical programming unit group to obtain first data; correcting the first data according to a first error check and correction code corresponding to the first data to obtain first corrected data; reading a second physical programming unit in the first physical programming unit group to obtain second data; and adjusting a first read voltage for reading a first memory cell to a second read voltage according to the first data, the first corrected data, and the second data.

公开(公告)号：US11373713B1

公开(公告)日：2022-06-28

申请号：US17209214

申请日：2021-03-22

Applicant: PHISON ELECTRONICS CORP.

Inventor： Shih-Jia Zeng ,  Lih Yuarn Ou ,  Hsiao-Yi Lin ,  Wei Lin

IPC: G11C16/34 ,  G11C16/26 ,  G11C16/30

Abstract: A memory control method, a memory storage device, and a memory control circuit unit are provided. The memory control method includes: reading multiple first memory cells using multiple read voltage levels to obtain a first threshold voltage distribution of the first memory cells; obtaining shift information of the first threshold voltage distribution with respect to an original threshold voltage distribution of the first memory cells; obtaining first reliability information corresponding to the first threshold voltage distribution; recovering original reliability information corresponding to the original threshold voltage distribution according to a statistical characteristic of the first reliability information; adjusting the original reliability information according to the shift information to obtain second reliability information corresponding to the first threshold voltage distribution; and updating reliability information related to the first memory cells according to the second reliability information.

公开(公告)号：US10685711B1

公开(公告)日：2020-06-16

申请号：US16276634

申请日：2019-02-15

Applicant: PHISON ELECTRONICS CORP.

Inventor： Wei Lin ,  Lih Yuarn Ou ,  Yu-Siang Yang

IPC: G06F3/06 ,  G11C16/08 ,  G11C16/26 ,  G11C16/10 ,  G11C16/14 ,  G11C11/56 ,  G11C16/04 ,  G11C16/24

Abstract: A decoding method, a memory controlling circuit unit, and a memory storage device are provided. The method includes: receiving a read command for reading first data; obtaining a current first temperature of a rewritable non-volatile memory module according to the read command; obtaining a second temperature of the rewritable non-volatile memory module of writing the first data to a first physical programming unit according to the read command; and selecting a first decoding operation according to the first temperature and the second temperature and executing the first decoding operation.

公开(公告)号：US10445002B2

公开(公告)日：2019-10-15

申请号：US15867719

申请日：2018-01-11

Applicant: PHISON ELECTRONICS CORP.

Inventor： Wei Lin ,  An-Cheng Liu ,  Lih Yuarn Ou ,  Szu-Wei Chen

IPC: G06F3/06 ,  G11C16/26 ,  G06F11/10 ,  G11C16/04 ,  G11C29/02 ,  G11C29/52 ,  G11C29/04

Abstract: A data accessing method, a memory controlling circuit unit and a memory storage device are provided. The method includes: reading a first physical programming unit by using a first read voltage to obtain first data; reading the first physical programming unit by using a second read voltage to obtain second data; inputting a first state parameter corresponding to the first data and a second state parameter corresponding to the second data into a numerical calculation engine, and determining a third reading voltage for reading the first physical programming unit by the numerical calculation engine.