公开(公告)号：US3649354A

公开(公告)日：1972-03-14

申请号：US3649354D

申请日：1967-04-11

Applicant: PHILIPS CORP

Inventor： VELDE TIES SIEBOLT TE

IPC: C25D5/56 ,  H01B5/16 ,  H01L21/28 ,  H01L23/31 ,  C23B5/50 ,  C23B5/64

CPC classification number: H01L21/28 ,  C25D5/56 ,  H01B5/16 ,  H01L23/31 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/3011 ,  Y10S148/12 ,  Y10S148/122 ,  H01L2924/00

Abstract: A method of manufacturing an electrical device in which a liquid electrically insulating filler substance is applied to a layer of electrically active grains which filler is allowed to contract thus exposing the peaks of the grains after which it is allowed to harden. The filler is preferably a resin hardenable by polymerization or by polycondensation in a liquid solution with a volatile solvent, for example polyurethane.

Abstract translation: 一种制造电气装置的方法，其中液体电绝缘填料物质被施加到电活性颗粒层上，该填料被允许收缩，从而暴露出允许其硬化的颗粒的峰。 填料优选是可通过聚合或通过在液体溶液中与挥发性溶剂例如聚氨酯缩聚而固化的树脂。

公开(公告)号：US3679496A

公开(公告)日：1972-07-25

申请号：US3679496D

申请日：1970-01-27

Applicant: PHILIPS CORP

Inventor： VELDE TIES SIEBOLT TE ,  HEUSDEN SYBRANDUS VAN

IPC: H01L21/00 ,  H01L21/22 ,  H01L29/267 ,  H01L31/00 ,  H01L7/44

CPC classification number: H01L29/267 ,  H01L21/00 ,  H01L21/22 ,  H01L31/00 ,  Y10S148/03

Abstract: LAYER OF THE HALIDE OF THE II MATERIAL IS SUBSEQUENTLY REMOVED WITH A SOLVENT THEREOF.

A METHOD OF FORMING A HETEROJUNCTION IN A SEMICONDUCTOR DEVICE WHEREIN A SUBSTRATE OF A POLYCRYSATLLINE LAYER OF A II-VI MATERIAL COATED WITH A THIN LAYER OF A HALIDE OF COPPER, SILVER AND/OR GOLD IS HEATED TO EFFECT A SOLID-STATE REACTION WHEREIN A HALIDE LAYER OF THE II-VI MATERIAL IS FORMED IN THE THIN LAYER AND AT LEAST ONE OF THE METALS COPPER, SILVER, AND GOLD PENETRATES INTO THE SUBSTRATE TO FORM A COMPOUND WITH THE VI MATERIAL WHICH PROVIDES A HETEROJUNCTIN WITH THE SUBSTRATE. THE THIN

公开(公告)号：US3620832A

公开(公告)日：1971-11-16

申请号：US3620832D

申请日：1967-04-11

Applicant: PHILIPS CORP

Inventor： VELDE TIES SIEBOLT TE

IPC: H01B1/20 ,  H01L31/0384 ,  H05B33/28 ,  B44D1/18 ,  H01J1/00

CPC classification number: H01B1/20 ,  H01L31/0384 ,  H05B33/28

Abstract: An electrode system comprising a semiconductive granular layer substantially one grain in thickness is manufactured by embedding a layer of this semiconductive material in an insulating material, e.g., polyurethane so that the peaks of the grains extend substantially above the insulating material i.e., the spaces between the grains are filled to a level well below the peaks of the grains. An electrode is formed on this layer by depositing an electrically conducting layer. The so-coated layer is thereafter subjected to an abrasive on a carrier comprising grains whose average diameter is smaller than the average diameter of the electrically active grains and whose diameter exceeds the average spacing between the active grains to remove only the electrode layer covering the exposed grain peaks without abrading the grains themselves. The grain size of the abrasive is critical to avoid grains of the abrasive being lodged in the depressions between the grains of the semiconductive material and to avoid removing portions of the semiconductive grains.

公开(公告)号：US3522339A

公开(公告)日：1970-07-28

申请号：US3522339D

申请日：1966-08-01

Applicant: PHILIPS CORP

Inventor： VELDE TIES SIEBOLT TE

IPC: B29C70/64 ,  B29C73/10 ,  H01L21/00 ,  H01L31/0384 ,  H01L33/00 ,  H05B33/20 ,  C04B35/00 ,  B29C24/00 ,  B29D9/00

CPC classification number: H05B33/20 ,  B29C70/64 ,  B29C73/10 ,  H01L21/00 ,  H01L31/0384 ,  H01L33/00 ,  Y10S148/12

公开(公告)号：US3480818A

公开(公告)日：1969-11-25

申请号：US3480818D

申请日：1966-08-01

Applicant: PHILIPS CORP

Inventor： VELDE TIES SIEBOLT TE

IPC: C23F1/00 ,  H01L31/0384 ,  H01L33/00 ,  H01L35/32 ,  H05B33/20 ,  H01J39/04 ,  H01J13/28 ,  H01J17/24

CPC classification number: H05B33/20 ,  C23F1/00 ,  H01L31/0384 ,  H01L33/00 ,  H01L35/32 ,  Y10S148/12