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公开(公告)号：US20180216800A1
公开(公告)日：2018-08-02
申请号：US15934657
申请日：2018-03-23
Inventor： Kazuhiko YAMANAKA , Hideki KASUGAI , Yoshihisa NAGASAKI , Takahiro HAMADA
CPC classification number: F21V9/32 , C09K11/02 , C09K11/7734 , C09K11/7774 , C09K11/7792 , F21K9/64 , F21V5/04 , F21V7/28 , F21V9/30 , F21V9/38 , F21Y2115/30 , G02B5/20 , H01L33/504 , H01L33/507 , H01L33/508 , H01L2933/0041 , H01S5/022
Abstract: A wavelength conversion element includes a support member having a supporting surface, and a wavelength converter disposed above the supporting surface. The wavelength converter contains first fluorescent particles which absorb excitation light and generate fluorescence (second radiation light), and a transparent binder which bonds the first fluorescent particles, and has a joint surface facing supporting surface, and an incident surface disposed opposite to the joint surface, the excitation light entering the incident surface. The excitation light and fluorescence are emitted from the incident surface. The wavelength converter includes projections. At least part of the projections is disposed on the incident surface. The first fluorescent particles are partially exposed from vertices of the projections.
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公开(公告)号：US20170159911A1
公开(公告)日：2017-06-08
申请号：US15435762
申请日：2017-02-17
Inventor： Kazuhiko YAMANAKA , Norio IKEDO
CPC classification number: F21V9/08 , C09K11/02 , C09K11/025 , C09K11/08 , F21V5/04 , F21V7/0066 , F21V9/30 , F21Y2115/30 , H01L33/505 , H01L33/507 , H01L2224/16225 , H05B33/10
Abstract: A phosphor optical element includes: a base member; a phosphor-containing member that includes a transparent member containing a phosphor particle; and a cover member, wherein the base member, the phosphor-containing member, and the cover member are sequentially formed on a transparent base that is transparent to a wavelength of incident light from an excitation light source, the phosphor particle has a diameter no greater than the wavelength of the incident light, and in an arbitrary cross section of the phosphor-containing member in a direction perpendicular to a main surface of the transparent base, the phosphor-containing member has, in a direction perpendicular to the main surface of the transparent base, a thickness no greater than the wavelength of the incident light.
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公开(公告)号：US20160284936A1
公开(公告)日：2016-09-29
申请号：US15174525
申请日：2016-06-06
Inventor： Katsuya SAMONJI , Kazuhiko YAMANAKA , Shinji YOSHIDA , Hiroyuki HAGINO
IPC: H01L33/12 , H01L33/14 , H01L33/32 , H01S5/02 , H01S5/024 , H01S5/042 , H01S5/022 , H01S5/343 , H01S5/323 , H01L33/06 , H01S5/20
CPC classification number: H01L33/12 , B82Y20/00 , H01L33/06 , H01L33/145 , H01L33/16 , H01L33/32 , H01L33/483 , H01L33/64 , H01L33/641 , H01L2224/48091 , H01S5/0206 , H01S5/02212 , H01S5/0226 , H01S5/02272 , H01S5/02469 , H01S5/02476 , H01S5/0425 , H01S5/2009 , H01S5/32341 , H01S5/34333 , H01S2304/04 , H01L2924/00014
Abstract: A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.
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公开(公告)号：US20150108518A1
公开(公告)日：2015-04-23
申请号：US14550145
申请日：2014-11-21
Inventor： Katsuya SAMONJI , Kazuhiko YAMANAKA , Shinji YOSHIDA , Hiroyuki HAGINO
CPC classification number: H01L33/12 , B82Y20/00 , H01L33/06 , H01L33/145 , H01L33/16 , H01L33/32 , H01L33/483 , H01L33/64 , H01L33/641 , H01L2224/48091 , H01S5/0206 , H01S5/02212 , H01S5/0226 , H01S5/02272 , H01S5/02469 , H01S5/02476 , H01S5/0425 , H01S5/2009 , H01S5/32341 , H01S5/34333 , H01S2304/04 , H01L2924/00014
Abstract: A semiconductor light emitting device includes: a nitride semiconductor light emitting element including a nitride semiconductor substrate having a polar or semipolar surface and a nitride semiconductor multilayer film stacked on the polar or semipolar surface; and a mounting section to which the element is mounted. The nitride semiconductor multilayer film includes an electron block layer. The electron block layer has a smaller lattice constant than the nitride semiconductor substrate. The mounting section includes at least a first mounting section base. The first mounting section base is located close to the nitride semiconductor light emitting element. The first mounting section base has a lower thermal expansion coefficient than the nitride semiconductor multilayer film. The first mounting section base has a lower thermal conductivity than the nitride semiconductor multilayer film.
Abstract translation: 半导体发光器件包括：氮化物半导体发光元件，其包括具有极性或半极性表面的氮化物半导体衬底和层叠在极性或半极性表面上的氮化物半导体多层膜; 以及安装该元件的安装部。 氮化物半导体多层膜包括电子阻挡层。 电子阻挡层具有比氮化物半导体衬底更小的晶格常数。 安装部分至少包括第一安装部分基部。 第一安装部分基座靠近氮化物半导体发光元件。 第一安装部分底座具有比氮化物半导体多层膜更低的热膨胀系数。 第一安装部分基底具有比氮化物半导体多层膜低的热导率。
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公开(公告)号：US20150124433A1
公开(公告)日：2015-05-07
申请号：US14598030
申请日：2015-01-15
Inventor： Toshikazu ONISHI , Kazuhiko YAMANAKA , Takuma KATAYAMA
CPC classification number: F21K9/90 , B82Y20/00 , F21V13/02 , H01S5/0078 , H01S5/0216 , H01S5/0425 , H01S5/18369 , H01S5/34333 , H01S5/423 , H04B10/116
Abstract: A visible light communication system includes a light transmitter including a group III nitride semiconductor laser element and a wavelength converter provided to face a light exit surface of the nitride semiconductor laser element and containing a fluorescent material. The visible light communication system further includes a wavelength filter configured to remove light emitted from the fluorescent material and a light receiving element configured to receive light emitted from the group III nitride semiconductor laser element via the wavelength filter.
Abstract translation: 可见光通信系统包括：光发射机，其包括III族氮化物半导体激光元件和设置为面对氮化物半导体激光元件的光出射面并含有荧光材料的波长转换器。 可见光通信系统还包括：波长滤波器，被配置为去除从荧光材料发射的光;以及光接收元件，被配置为经由波长滤光器接收从III族氮化物半导体激光元件发射的光。
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Patent Agency Ranking
公开(公告)号：US20180375001A1
公开(公告)日：2018-12-27
申请号：US16053047
申请日：2018-08-02
Inventor： Hirotaka UENO , Hideo YAMAGUCHI , Masaharu FUKAKUSA , Kazuhiko YAMANAKA
Abstract: A light source device includes: a semiconductor light emitting device which emits laser light; a wavelength conversion component which emits fluorescence by being irradiated with the laser light emitted from the semiconductor light emitting device as excitation light; and a photodetector on which a portion of light emitted from the wavelength conversion component is incident. The photodetector is disposed at a location off a light path of usable radiation light which is emitted from the wavelength conversion component to a space and used as illumination light.
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公开(公告)号：US20180235040A1
公开(公告)日：2018-08-16
申请号：US15950846
申请日：2018-04-11
Inventor： Kazuhiko YAMANAKA , Kiyoshi MORIMOTO , Hideki KASUGAI , Kazuyuki MATSUMURA , Hideo YAMAGUCHI , Nobuyasu SUZUKI
CPC classification number: H01S5/02469 , G02B19/0014 , G02B19/0028 , G02B19/0052 , G03B21/16 , G03B21/2033 , H01S5/005 , H01S5/02 , H01S5/02208 , H01S5/02212 , H01S5/02236 , H01S5/02296 , H01S5/024 , H01S5/02476
Abstract: A light source device includes: a semiconductor light-emitting device including a flat-shaped base having a first main surface on a first side and a second main surface and a semiconductor light-emitting element disposed on the first side; a first fixing component having a first through-hole and a first pressing surface that presses the first main surface; and a second fixing component having a second through-hole and a second pressing surface that presses the second main surface. The base is fixed between the first and second pressing surfaces by an engagement between a first inner surface surrounding the first through-hole of the first fixing component and a second outer surface of the second fixing component. A distance between the first and second pressing surfaces is smaller than or equal to a thickness of the base, and a void is formed lateral to the base between the first and second pressing surfaces.
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公开(公告)号：US20180233633A1
公开(公告)日：2018-08-16
申请号：US15951897
申请日：2018-04-12
Inventor： Kazuhiko YAMANAKA , Hideki KASUGAI , Hirotaka UENO , Kimihiro MURAKAMI
Abstract: A light emitting device includes a wavelength conversion element, and an excitation light source which radiates excitation light to the wavelength conversion element. The wavelength conversion element includes a support member having a supporting surface, and a wavelength conversion member disposed on the supporting surface so as to be contained within the support member when the support member is viewed from the supporting surface side. An outer peripheral region on the support member, which is an outer peripheral portion of an arrangement region including the wavelength conversion member and is exposed from the wavelength conversion member, includes a light absorbing portion which can absorb first light having same wavelength as the excitation light or a light scattering portion which can scatter the first light. The arrangement region includes a reflective member which is disposed between the wavelength conversion member and the support member, and is different from the support member.
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公开(公告)号：US20190097095A1
公开(公告)日：2019-03-28
申请号：US16184125
申请日：2018-11-08
Inventor： Kazuhiko YAMANAKA , Hideki KASUGAI
Abstract: A light source device includes a semiconductor light-emitting device which emits coherent excitation light, and a wavelength conversion element which is spaced from the semiconductor light-emitting device, generates fluorescence by converting the wavelength of the excitation light emitted from semiconductor light-emitting device, and generates scattered light by scattering the excitation light. The wavelength conversion element includes a support member, and a wavelength converter disposed on the support member. The wavelength converter includes a first wavelength converter, and a second wavelength converter which is disposed around the first wavelength converter to surround the first wavelength converter in a top view of the surface of the support member on which the wavelength converter is disposed. The ratio of the intensity of fluorescence to that of scattered light is lower in the second wavelength converter than in the first wavelength converter.
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公开(公告)号：US20190259917A1
公开(公告)日：2019-08-22
申请号：US16399790
申请日：2019-04-30
Inventor： Kazuhiko YAMANAKA , Kenichi MATSUMOTO , Hideo YAMAGUCHI , Wakahiko OKAZAKI , Yasuhiko ENAMI , Taku KOBAYASHI , Kazuki ADACHI , Hirotaka UENO
Abstract: A light source device includes a mounted substrate which is a multi-layered substrate, a semiconductor light-emitting device which emits a laser beam, a wavelength-converting member which radiates fluorescence by being irradiated with the laser beam emitted from the semiconductor light-emitting device as an excitation light, a state detection circuit, an electric field effect type transistor which adjusts an electric current amount applied to the semiconductor light-emitting device upon receipt of an output from the state detection circuit, and an external connecting member, and the semiconductor light-emitting device, the state detection circuit, the transistor, and the external connecting member are mounted on the single mounted substrate.
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