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公开(公告)号：US20130234111A1
公开(公告)日：2013-09-12
申请号：US12942817
申请日：2010-11-09
CPC分类号： H01L33/0095 , H01L29/20 , H01L33/0075 , H01L33/32 , H01L2933/0066 , H01S5/0014 , H01S5/0202 , H01S5/0203 , H01S5/0421 , H01S5/2013 , H01S5/3013 , H01S5/3202 , H01S5/32341
摘要： A method for forming optical devices. The method includes providing a gallium nitride substrate member having a crystalline surface region and a backside region. The method also includes subjecting the backside region to a laser scribing process to form a plurality of scribe regions on the backside region and forming a metallization material overlying the backside region including the plurality of scribe regions. The method removes at least one optical device using at least one of the scribe regions.
摘要翻译： 一种形成光学器件的方法。 该方法包括提供具有结晶表面区域和背面区域的氮化镓衬底构件。 该方法还包括使背面区域进行激光划线工艺以在背面区域上形成多个划线区域，并形成覆盖包括多个划线区域的背面区域的金属化材料。 该方法使用至少一个划线区域去除至少一个光学装置。
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公开(公告)号：US09048170B2
公开(公告)日：2015-06-02
申请号：US12942817
申请日：2010-11-09
CPC分类号： H01L33/0095 , H01L29/20 , H01L33/0075 , H01L33/32 , H01L2933/0066 , H01S5/0014 , H01S5/0202 , H01S5/0203 , H01S5/0421 , H01S5/2013 , H01S5/3013 , H01S5/3202 , H01S5/32341
摘要： A method for forming optical devices. The method includes providing a gallium nitride substrate member having a crystalline surface region and a backside region. The method also includes subjecting the backside region to a laser scribing process to form a plurality of scribe regions on the backside region and forming a metallization material overlying the backside region including the plurality of scribe regions. The method removes at least one optical device using at least one of the scribe regions.
摘要翻译： 一种形成光学器件的方法。 该方法包括提供具有结晶表面区域和背面区域的氮化镓衬底构件。 该方法还包括使背面区域进行激光划线工艺以在背面区域上形成多个划线区域，并形成覆盖包括多个划线区域的背面区域的金属化材料。 该方法使用至少一个划线区域去除至少一个光学装置。
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公开(公告)号：US08634442B1
公开(公告)日：2014-01-21
申请号：US12868441
申请日：2010-08-25
申请人： James W. Raring , Daniel F. Feezell , Nicholas J. Pfister , Rajat Sharma , Mathew C. Schmidt , Christiane Poblenz , Yu-Chia Chang
发明人： James W. Raring , Daniel F. Feezell , Nicholas J. Pfister , Rajat Sharma , Mathew C. Schmidt , Christiane Poblenz , Yu-Chia Chang
IPC分类号： H01S5/00
CPC分类号： H01S5/2201 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/2009 , H01S5/3202 , H01S5/34333
摘要： An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.
摘要翻译： 光学器件包括具有m面非极性晶体表面区域的氮化镓衬底构件，其特征在于朝向（000-1）约为-1度且朝向（11-20）小于约+/- 0.3度。 该器件还具有覆盖在m面非极性晶体取向表面区域的一部分上的激光条纹区域。 在优选实施例中，激光条纹区域的特征在于基本上平行于c方向的空腔取向，激光条纹区域具有第一端和第二端。 该装置包括被设置在激光条区域的第一端上的第一切割的c面小面。 该装置还具有暴露于激光条区域的第二端上的第二切割的c面刻面。
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4.发明授权Optical device structure using miscut GaN substrates for laser applications 有权使用miscut GaN衬底进行激光应用的光学器件结构公开(公告)号：US08422525B1
公开(公告)日：2013-04-16
申请号：US12749466
申请日：2010-03-29
IPC分类号： H01S5/00
CPC分类号： H01S5/3202 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/2009 , H01S5/2201 , H01S5/34333 , H01S2301/14
摘要： An optical device capable of emitting light having a wavelength ranging from about 490 to about 580 nanometers has a gallium nitride substrate with a semipolar crystalline surface region characterized by an orientation of greater than 3 degrees from (11-22) towards (0001) but less than about 50 degrees. A laser stripe formed on the substrate has a cavity orientation substantially parallel to the m-direction.
摘要翻译： 能够发射波长为约490至约580纳米的光的光学器件具有氮化镓衬底，其具有半极性晶体表面区域，其特征在于从（11-22）朝向（0001）大于3度的取向，但较少 比约50度。 形成在基板上的激光条纹具有基本上平行于m方向的空腔取向。
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公开(公告)号：US20100316075A1
公开(公告)日：2010-12-16
申请号：US12759273
申请日：2010-04-13
CPC分类号： H01S5/2201 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/2009 , H01S5/3202 , H01S5/32341
摘要： An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −2 degrees to about 2 degrees towards (000-1) and less than about 0.5 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. A first cleaved c-face facet is provided on one end of the laser stripe region, and a second cleaved c-face facet is provided on the other end of the laser stripe region.
摘要翻译： 光学器件包括具有m面非极性晶体表面区域的氮化镓衬底构件，其特征在于朝向（000-1）约-2度至约2度且朝向（11-20）小于约0.5度。 该器件还具有覆盖在m面非极性晶体取向表面区域的一部分上的激光条纹区域。 在激光条区域的一端设置第一切割的c面刻面，在激光条纹区域的另一端设置第二切割的c面刻面。
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公开(公告)号：US09531164B2
公开(公告)日：2016-12-27
申请号：US12759273
申请日：2010-04-13
CPC分类号： H01S5/2201 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/2009 , H01S5/3202 , H01S5/32341
摘要： An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −2 degrees to about 2 degrees towards (000-1) and less than about 0.5 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. A first cleaved c-face facet is provided on one end of the laser stripe region, and a second cleaved c-face facet is provided on the other end of the laser stripe region.
摘要翻译： 光学器件包括具有m面非极性晶体表面区域的氮化镓衬底构件，其特征在于朝向（000-1）约-2度至约2度且朝向（11-20）小于约0.5度。 该器件还具有覆盖在m面非极性晶体取向表面区域的一部分上的激光条纹区域。 在激光条区域的一端设置第一切割的c面刻面，在激光条纹区域的另一端设置第二切割的c面刻面。
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7.发明申请公开(公告)号：US20120104359A1
公开(公告)日：2012-05-03
申请号：US13291922
申请日：2011-11-08
申请人： Andrew Felker , Nicholas A. Vickers , Rafael Aldaz , David Press , Nicholas J. Pfister , James W. Raring , Mathew C. Schmidt , Kenneth John Thomson
发明人： Andrew Felker , Nicholas A. Vickers , Rafael Aldaz , David Press , Nicholas J. Pfister , James W. Raring , Mathew C. Schmidt , Kenneth John Thomson
CPC分类号： H01L33/20 , B82Y20/00 , H01L33/0095 , H01L2924/0002 , H01S5/0202 , H01S5/0217 , H01S5/028 , H01S5/0425 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/04 , H01L2924/00
摘要： A method for forming optical devices includes providing a gallium nitride substrate having a crystalline surface region and a backside region. The backside is subjected to a laser scribing process to form scribe regions. Metal contacts overly the scribe regions.
摘要翻译： 一种形成光学器件的方法包括提供具有结晶表面区域和背面区域的氮化镓衬底。 将背面进行激光划线处理以形成划线区域。 金属接触过度的划痕区域。
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8.发明授权Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material 有权使用激光处理含镓和氮的材料的接触区域制造光学器件的方法公开(公告)号：US08975615B2
公开(公告)日：2015-03-10
申请号：US13291922
申请日：2011-11-08
申请人： Andrew Felker , Nicholas A. Vickers , Rafael Aldaz , David Press , Nicholas J. Pfister , James W. Raring , Mathew C. Schmidt , Kenneth John Thomson
发明人： Andrew Felker , Nicholas A. Vickers , Rafael Aldaz , David Press , Nicholas J. Pfister , James W. Raring , Mathew C. Schmidt , Kenneth John Thomson
IPC分类号： H01L33/06 , H01L33/20 , B82Y20/00 , H01S5/042 , H01S5/22 , H01S5/32 , H01L33/00 , H01S5/02 , H01S5/028 , H01S5/343
CPC分类号： H01L33/20 , B82Y20/00 , H01L33/0095 , H01L2924/0002 , H01S5/0202 , H01S5/0217 , H01S5/028 , H01S5/0425 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/04 , H01L2924/00
摘要： A method for forming optical devices includes providing a gallium nitride substrate having a crystalline surface region and a backside region. The backside is subjected to a laser scribing process to form scribe regions. Metal contacts overly the scribe regions.
摘要翻译： 一种形成光学器件的方法包括提供具有结晶表面区域和背面区域的氮化镓衬底。 将背面进行激光划线处理以形成划线区域。 金属接触过度的划痕区域。
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公开(公告)号：US20160013620A9
公开(公告)日：2016-01-14
申请号：US12883652
申请日：2010-09-16
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/2009 , H01S5/227 , H01S5/3202 , H01S5/3213 , H01S5/3407 , H01S5/4025
摘要： A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
摘要翻译： 一种低电压激光器件，其具有被配置用于一个或多个所选择的光发射波长的有源区。
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10.发明授权Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates 有权在{30-31}或切割含镓和氮的底物上形成激光二极管的生长结构和方法公开(公告)号：US08351478B2
公开(公告)日：2013-01-08
申请号：US12884993
申请日：2010-09-17
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/2009 , H01S5/227 , H01S5/3202 , H01S5/3213 , H01S5/3407 , H01S5/4025
摘要： An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate.
摘要翻译： 一种光学器件，其具有被配置用于一个或多个所选择的发光波长的结构化的有源区，并形成在切断的m面镓和含氮衬底上。
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