公开(公告)号：US10446694B2

公开(公告)日：2019-10-15

申请号：US15620846

申请日：2017-06-13

Applicant: National Applied Research Laboratories

Inventor： Kai-Shin Li ,  Bo-Wei Wu ,  Min-Cheng Chen ,  Jia-Min Shieh ,  Wen-Kuan Yeh

IPC: H01L29/786 ,  H01L29/08 ,  H01L29/06 ,  H01L29/24 ,  H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L29/423 ,  H01L29/778 ,  H01L29/10

Abstract: A field-effect transistor structure having two-dimensional transition metal dichalcogenides includes a substrate, a source/drain structure, a two-dimensional (2D) channel layer, and a gate layer. The source/drain structure is disposed on the substrate and has a surface higher than a surface of the substrate. The 2D channel layer is disposed on the source and the drain and covers the space between the source and the drain. The gate layer is disposed between the source and the drain and covers the 2D channel layer. The field-effect transistor having two-dimensional transition metal dichalcogenides is a planar field-effect transistor or a fin field-effect transistor.

公开(公告)号：US20250133968A1

公开(公告)日：2025-04-24

申请号：US18921034

申请日：2024-10-21

Applicant: National Applied Research Laboratories

Inventor： Ya-Jui Tsou ,  Duan-Lee Tang ,  Yuan-Chen Sun ,  Kai-Shin Li ,  Ya-Ling Wu ,  Jia-Min Shieh

IPC: H10N50/10 ,  G11C11/16 ,  H10B61/00 ,  H10N50/80

Abstract: The present invention provides a spin-orbit torque magnetoresistive memory structure, which comprises a first conductive layer, a magnetic tunneling junction (MTJ) layer, a channel layer, and a second conductive layer stacked sequentially. The MTJ layer is disposed on the first conductive layer. The channel layer is disposed on the MTJ layer. The second conductive layer is disposed on the channel layer. These structures are fabricated sequentially using lithography. By forming the MTJ layer before the channel layer, redeposition of the metal of the channel layer on the MTJ layer can be avoided.

公开(公告)号：US20180358474A1

公开(公告)日：2018-12-13

申请号：US15620846

申请日：2017-06-13

Applicant: National Applied Research Laboratories

Inventor： Kai-Shin Li ,  Bo-Wei Wu ,  Min-Cheng Chen ,  Jia-Min Shieh ,  Wen-Kuan Yeh

IPC: H01L29/786 ,  H01L29/08 ,  H01L29/06 ,  H01L29/24 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L21/02697 ,  H01L29/0657 ,  H01L29/0688 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78618

Abstract: A field-effect transistor structure having two-dimensional transition metal dichalcogenides includes a substrate, a source/drain structure, a two-dimensional (2D) channel layer, and a gate layer. The source/drain structure is disposed on the substrate and has a surface higher than a surface of the substrate. The 2D channel layer is disposed on the source and the drain and covers the space between the source and the drain. The gate layer is disposed between the source and the drain and covers the 2D channel layer. The field-effect transistor having two-dimensional transition metal dichalcogenides is a planar field-effect transistor or a fin field-effect transistor.