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    Semiconductor Device
    1.
    发明申请
    Semiconductor Device 有权
    半导体器件

    公开(公告)号：US20080230807A1

    公开(公告)日：2008-09-25

    申请号：US11547402

    申请日：2005-03-30

    Applicant: Naotaka Kuroda ,  Masahiro Tanomura ,  Naoto Kurosawa

    Inventor： Naotaka Kuroda ,  Masahiro Tanomura ,  Naoto Kurosawa

    IPC: H01L29/73 ,  H01L23/34

    CPC classification number: H01L29/7371 ,  H01L23/367 ,  H01L27/0605 ,  H01L27/0664 ,  H01L29/66318 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor device having sufficiently high heat dissipation performance while inhibiting an increase in the area of a chip is provided. In semiconductor device 1, a plurality of HBTs 20 and a plurality of diodes 30 are one-dimensionally and alternately arranged on semiconductor substrate 10. Anode electrode 36 of diode 30 is connected to emitter electrode 27 of HBT 20 via common emitter wiring 42. Diode 30 works as heat dissipating elements dissipating to semiconductor substrate 10 the heat transmitted through common emitter wiring 42 from emitter electrode 27, and also works as a protection diode connected in parallel between an emitter and a collector of HBT 20.

    Abstract translation: 提供具有足够高的散热性能同时抑制芯片面积的增加的半导体器件。 在半导体器件1中，多个HBT 20和多个二极管30一维地交替地布置在半导体衬底10上。 二极管30的阳极电极36通过公共发射极配线42连接到HBT 20的发射极27。 二极管30作为散热元件散发到半导体衬底10上，从发射极27传播通过公共发射极配线42的热，并且还用作并联连接在HBT 20的发射极和集电极之间的保护二极管。

    Transistor with heat dissipating means
    2.
    发明授权
    Transistor with heat dissipating means 有权
    具有散热装置的晶体管

    公开(公告)号：US07741700B2

    公开(公告)日：2010-06-22

    申请号：US11547402

    申请日：2005-03-30

    Applicant: Naotaka Kuroda ,  Masahiro Tanomura ,  Naoto Kurosawa

    Inventor： Naotaka Kuroda ,  Masahiro Tanomura ,  Naoto Kurosawa

    IPC: H01L27/082 ,  H01L27/102 ,  H01L29/70 ,  H01L31/11

    CPC classification number: H01L29/7371 ,  H01L23/367 ,  H01L27/0605 ,  H01L27/0664 ,  H01L29/66318 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor device having sufficiently high heat dissipation performance while inhibiting an increase in the area of a chip is provided. In semiconductor device 1, a plurality of HBTs 20 and a plurality of diodes 30 are one-dimensionally and alternately arranged on semiconductor substrate 10. Anode electrode 36 of diode 30 is connected to emitter electrode 27 of HBT 20 via common emitter wiring 42. Diode 30 works as heat dissipating elements dissipating to semiconductor substrate 10 the heat transmitted through common emitter wiring 42 from emitter electrode 27, and also works as a protection diode connected in parallel between an emitter and a collector of HBT 20.

    Abstract translation: 提供具有足够高的散热性能同时抑制芯片面积的增加的半导体器件。 在半导体器件1中，多个HBT 20和多个二极管30在半导体衬底10上一维地交替地布置。二极管30的阳极电极36通过公共发射极布线42连接到HBT 20的发射电极27.二极管 30作为散热元件散发到半导体衬底10上，从发射极27传播通过公共发射极配线42的热，并且还用作并联连接在HBT 20的发射极和集电极之间的保护二极管。

    CIRCUIT SIMULATOR, CIRCUIT SIMULATION METHOD AND PROGRAM
    3.
    发明申请
    CIRCUIT SIMULATOR, CIRCUIT SIMULATION METHOD AND PROGRAM 失效
    电路仿真器，电路仿真方法和程序

    公开(公告)号：US20100057412A1

    公开(公告)日：2010-03-04

    申请号：US12517258

    申请日：2007-12-13

    Applicant: Masahiro Tanomura ,  Naotaka Kuroda ,  Masafumi Kawanaka

    Inventor： Masahiro Tanomura ,  Naotaka Kuroda ,  Masafumi Kawanaka

    IPC: G06G7/56 ,  G06F17/50 ,  G06G7/62 ,  G06F17/10

    CPC classification number: G06F17/5036

    Abstract: Characteristics of a circuit element are predicted accurately by taking account not only of the temperature variation due to self-heating of the element but also of temperature variation due to heat transmission from an adjoining heater element. With reference to an electric network supplied from an electric network input unit (2) and a heat network supplied from a heat network input unit (3), a simulation unit (4) determines a first heat generation temperature resulting from the amount of self-heat generation of that element and a second heat generating temperature resulting from the amount of heat flowing into that element from other elements, respectively, for a plurality of elements which make up a semiconductor integrated circuit, calculates the element temperature of that element based on the first and second heat generation temperatures, and then calculates the voltage value and the current value in the element at that element temperature based on previously provided data indicative of temperature dependency of that element.

    Abstract translation: 通过考虑由于元件的自加热引起的温度变化以及由于邻接的加热器元件的热传递引起的温度变化，可以精确地预测电路元件的特性。 参考从电网输入单元（2）提供的电网和从热网输入单元（3）提供的热网络，模拟单元（4）确定由自适应量产生的第一发热温度， 对于构成半导体集成电路的多个元件，该元件的发热和由分别从其它元件流入该元件的热量产生的第二发热温度基于该元件的温度来计算元件温度 第一和第二发热温度，然后基于先前提供的指示该元件的温度依赖性的数据计算该元件温度下的元件中的电压值和电流值。

    Circuit simulator, circuit simulation method and program
    7.
    发明授权
    Circuit simulator, circuit simulation method and program 失效
    电路仿真器，电路仿真方法及程序

    公开(公告)号：US08332190B2

    公开(公告)日：2012-12-11

    申请号：US12517258

    申请日：2007-12-13

    Applicant: Masahiro Tanomura ,  Naotaka Kuroda ,  Masafumi Kawanaka

    Inventor： Masahiro Tanomura ,  Naotaka Kuroda ,  Masafumi Kawanaka

    IPC: G06F17/50 ,  H01L21/82

    CPC classification number: G06F17/5036

    Abstract: Characteristics of a circuit element are predicted accurately by taking account not only of the temperature variation due to self-heating of the element but also of temperature variation due to heat transmission from an adjoining heater element. With reference to an electric network supplied from an electric network input unit (2) and a heat network supplied from a heat network input unit (3), a simulation unit (4) determines a first heat generation temperature resulting from the amount of self-heat generation of that element and a second heat generating temperature resulting from the amount of heat flowing into that element from other elements, respectively, for a plurality of elements which make up a semiconductor integrated circuit, calculates the element temperature of that element based on the first and second heat generation temperatures, and then calculates the voltage value and the current value in the element at that element temperature based on previously provided data indicative of temperature dependency of that element.

    Abstract translation: 通过考虑由于元件的自加热引起的温度变化以及由于邻接的加热器元件的热传递引起的温度变化，可以精确地预测电路元件的特性。 参考从电网输入单元（2）提供的电网和从热网输入单元（3）提供的热网络，模拟单元（4）确定由自适应量产生的第一发热温度， 对于构成半导体集成电路的多个元件，该元件的发热和由分别从其它元件流入该元件的热量产生的第二发热温度基于该元件的温度来计算元件温度 第一和第二发热温度，然后基于先前提供的指示该元件的温度依赖性的数据计算该元件温度下的元件中的电压值和电流值。

    Simulation device, simulation method, and recording medium storing program
    9.
    发明授权
    Simulation device, simulation method, and recording medium storing program 失效
    仿真设备，仿真方法和记录介质存储程序

    公开(公告)号：US08630835B2

    公开(公告)日：2014-01-14

    申请号：US13129341

    申请日：2009-09-17

    Applicant: Masahiro Tanomura

    Inventor： Masahiro Tanomura

    IPC: G06F17/50

    CPC classification number: G06F17/5036

    Abstract: Provided are a device model, a recording medium storing a program, a simulation circuit, device, and method that calculate a local temperature increase in an element. The device model according to the present invention is used for a semiconductor circuit simulation and has at least two model parameters. The model parameters include an electrical model describing temperature characteristics and a thermal model describing thermal characteristics and corresponding to the electrical model.

    Abstract translation: 提供了一种计算元件中的局部温度升高的装置型号，存储程序的记录介质，模拟电路，装置和方法。 根据本发明的器件模型用于半导体电路仿真，并且具有至少两个模型参数。 模型参数包括描述温度特性的电气模型和描述热特性并对应于电气模型的热模型。

    Transimpedance amplifier
    10.
    发明申请
    Transimpedance amplifier 有权
    互阻放大器

    公开(公告)号：US20090102563A1

    公开(公告)日：2009-04-23

    申请号：US11990871

    申请日：2006-07-24

    Applicant: Masahiro Tanomura ,  Kouji Matsunaga

    Inventor： Masahiro Tanomura ,  Kouji Matsunaga

    IPC: H03F1/34

    CPC classification number: H03F1/42 ,  H03F1/08 ,  H03F1/34 ,  H03F2200/36

    Abstract: The present invention solves characteristic deterioration caused by peaking and a ground inductance, and provides a transimpedance amplifier capable of achieving a higher gain and a wider band. For this purpose, the transimpedance amplifier is configured to include a feedback circuit having two or more extreme frequencies and having a filter characteristic which is flat with respect to frequencies in a frequency region not more than a smallest extreme frequency among the extreme frequencies, which is flat with respect to frequencies in a frequency region not less than a largest extreme frequency among the extreme frequencies, and which has at least one negative inclination portion with respect to frequencies in a frequency region between the smallest and largest extreme frequencies.

    Abstract translation: 本发明解决了由峰值和接地电感引起的特性劣化，并且提供了能够实现更高增益和更宽带的跨阻放大器。 为此，跨阻放大器被配置为包括具有两个或多个极端频率的反馈电路，并且具有相对于极端频率中不超过最小极端频率的频率区域中的频率为平坦的滤波器特性，其为 相对于极端频率以上的最大极端频率以上的频率区域中的频率平坦，并且相对于最小和最大极端频率之间的频率区域中的频率具有至少一个负倾斜部分。

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