Wafer dividing method and apparatus
    1.
    发明授权
    Wafer dividing method and apparatus 有权
    晶圆分割方法和装置

    公开(公告)号:US07063083B2

    公开(公告)日:2006-06-20

    申请号:US11183828

    申请日:2005-07-19

    IPC分类号: B28D1/00 B26F3/00

    摘要: A method of dividing a wafer whose strength is reduced along a plurality of dividing lines formed on the front surface in a lattice pattern, along the dividing lines, comprising: a tape affixing step for affixing a protective tape to one surface side of the wafer; a holding step for positioning a first suction-holding member and a second suction-holding member on both sides of a dividing line and suction-holding the wafer on the first suction-holding member and the second suction-holding member through the protective tape; and a dividing step for moving the first suction-holding member and the second suction-holding member in a direction for separating them from each other to exert tensile force in a direction perpendicular to the dividing line.

    摘要翻译: 沿着分割线沿着形成在前表面上的多个分割线以强度减小的晶片以格子图案分割晶片的方法,包括:用于将保护带固定到晶片的一个表面侧的带固定步骤; 保持步骤,用于在分隔线的两侧定位第一吸持保持构件和第二吸持保持构件,并且通过保护带将第一吸引保持构件和第二吸持保持构件上的晶片吸持保持; 以及分割步骤,用于使第一吸持保持部件和第二吸持保持部件沿彼此分离的方向移动,以在与分割线垂直的方向上施加张力。

    Wafer dividing method and apparatus

    公开(公告)号:US20060016443A1

    公开(公告)日:2006-01-26

    申请号:US11183828

    申请日:2005-07-19

    IPC分类号: B28D1/02

    摘要: A method of dividing a wafer whose strength is reduced along a plurality of dividing lines formed on the front surface in a lattice pattern, along the dividing lines, comprising: a tape affixing step for affixing a protective tape to one surface side of the wafer; a holding step for positioning a first suction-holding member and a second suction-holding member on both sides of a dividing line and suction-holding the wafer on the first suction-holding member and the second suction-holding member through the protective tape; and a dividing step for moving the first suction-holding member and the second suction-holding member in a direction for separating them from each other to exert tensile force in a direction perpendicular to the dividing line.

    Wafer dividing method
    3.
    发明授权
    Wafer dividing method 有权
    晶圆分割法

    公开(公告)号:US07618878B2

    公开(公告)日:2009-11-17

    申请号:US12071711

    申请日:2008-02-25

    摘要: A method of dividing a wafer having a plurality of devices, which are formed in a plurality of areas sectioned by streets formed in a lattice pattern on the front surface, and having test metal patterns which are formed on the streets, comprising the steps of: a laser beam application step for carrying out laser processing to form a dividing start point along a street on both sides of the test metal patterns by applying a laser beam along the street on both sides of the test metal patterns in the street formed on the wafer; and a dividing step for dividing the wafer which has been laser processed to form dividing start points along the dividing start points by exerting external force to the wafer, resulting in leaving the streets having the test metal patterns formed thereon behind.

    摘要翻译: 一种分割具有多个装置的晶片的方法,所述晶片形成在由前表面上的格子图案形成的街道划分的多个区域中,并且具有形成在街道上的测试金属图案,包括以下步骤: 激光束施加步骤,用于通过在形成在晶片上的街道中的测试金属图案的两侧沿着街道施加激光束来进行激光处理以在测试金属图案的两侧上沿着街道形成分割起始点 ; 以及分割步骤,通过向晶片施加外力,分割已经被激光处理的晶片沿分割开始点形成分割开始点,导致留下在其上形成有测试金属图案的街道。

    Wafer dividing method
    4.
    发明申请
    Wafer dividing method 有权
    晶圆分割法

    公开(公告)号:US20080153264A1

    公开(公告)日:2008-06-26

    申请号:US12071711

    申请日:2008-02-25

    IPC分类号: H01L21/00

    摘要: A method of dividing a wafer having a plurality of devices, which are formed in a plurality of areas sectioned by streets formed in a lattice pattern on the front surface, and having test metal patterns which are formed on the streets, comprising the steps of: a laser beam application step for carrying out laser processing to form a dividing start point along a street on both sides of the test metal patterns by applying a laser beam along the street on both sides of the test metal patterns in the street formed on the wafer; and a dividing step for dividing the wafer which has been laser processed to form dividing start points along the dividing start points by exerting external force to the wafer, resulting in leaving the streets having the test metal patterns formed thereon behind.

    摘要翻译: 一种分割具有多个装置的晶片的方法,所述晶片形成在由前表面上的格子图案形成的街道划分的多个区域中,并且具有形成在街道上的测试金属图案,包括以下步骤: 激光束施加步骤,用于通过在形成在晶片上的街道中的测试金属图案的两侧沿着街道施加激光束来进行激光处理以在测试金属图案的两侧上沿着街道形成分割起始点 ; 以及分割步骤,通过向晶片施加外力,分割已经被激光处理的晶片沿分割开始点形成分割开始点,导致留下在其上形成有测试金属图案的街道。

    Wafer dividing method
    5.
    发明授权
    Wafer dividing method 有权
    晶圆分割法

    公开(公告)号:US07329564B2

    公开(公告)日:2008-02-12

    申请号:US11198137

    申请日:2005-08-08

    IPC分类号: H01L21/00 H01L21/30 H01L21/46

    摘要: A method of dividing a wafer having a plurality of dividing lines formed on the front surface in a lattice pattern and function elements formed in a plurality of areas sectioned by the plurality of dividing lines into individual chips, along the dividing lines, the method comprising the steps of forming a deteriorated layer by applying a laser beam capable of passing through the wafer along the dividing lines; expanding the support tape affixed to the wafer to divide the wafer into individual chips along the dividing lines where the deteriorated layer has been formed and to form a space between adjacent chips; and applying an external stimulus to an area, to which the wafer is affixed, of the support tape in the above state to cure the adhesive layer to maintain the space between adjacent chips.

    摘要翻译: 一种将沿着划分线将形成在前表面上的多个划分线的晶片和由多个分割线划分成多个区域的功能元件分成单个芯片的方法,该方法包括: 通过施加能够沿分割线穿过晶片的激光束形成劣化层的步骤; 扩展固定在晶片上的支撑胶带,沿着形成了劣化层的分割线将晶片分割成单独的芯片,并在相邻芯片之间形成空间; 并且在上述状态下将外部刺激施加到支撑带的晶片固定的区域上,以固化粘合剂层以保持相邻芯片之间的空间。

    Wafer dividing method
    6.
    发明申请
    Wafer dividing method 有权
    晶圆分割法

    公开(公告)号:US20070004179A1

    公开(公告)日:2007-01-04

    申请号:US11472285

    申请日:2006-06-22

    IPC分类号: H01L21/78

    摘要: A method of dividing a wafer having a plurality of devices, which are formed in a plurality of areas sectioned by streets formed in a lattice pattern on the front surface and test metal patterns which are formed on the streets, comprising: a metal pattern breaking step for forming a break line in the test metal patterns by applying a pulse laser beam having permeability to the wafer to the rear surface of the wafer with its focal point set to a position near the test metal patterns; a deteriorated layer forming step for forming a deteriorated layer along the streets above the break lines in the inside of the wafer by applying a pulse laser beam having permeability to the wafer to the rear surface of the wafer with its focal point set to a position above the break lines in the inside of the wafer; and a dividing step for dividing the wafer into individual chips along the deteriorated layers of the wafer by exerting external force to the wafer having the deteriorated layers formed therein.

    摘要翻译: 一种分割具有多个装置的晶片的方法,所述晶片形成在由正面上的格子图案形成的街道划分的多个区域中,并且测试形成在街道上的金属图案,包括:金属图案断裂步骤 用于通过将其焦点设置在靠近测试金属图案的位置向晶片的后表面施加具有渗透性的脉冲激光束,从而在测试金属图案中形成断裂线; 劣化层形成步骤,用于通过将具有渗透性的脉冲激光束施加到晶片的后表面,使其焦点设置在晶片的上方,沿着晶片内部的断裂线上方的街道形成劣化层 晶片内部的断裂线; 以及分割步骤,通过向其中形成有劣化层的晶片施加外力,将晶片分割成沿晶片的劣化层的各个芯片。

    Laser beam machine
    7.
    发明申请
    Laser beam machine 审中-公开
    激光束机

    公开(公告)号:US20050082267A1

    公开(公告)日:2005-04-21

    申请号:US10950813

    申请日:2004-09-28

    IPC分类号: B23K26/00 B23K26/03

    CPC分类号: B23K26/03 B23K2101/40

    摘要: A laser beam machine comprising a chuck table for holding a workpiece and a laser beam application means for applying a laser to the workpiece held on the chuck table, wherein the machine further comprises a processing sound wave detection means for detecting processing sound waves generated when a laser beam is applied to the workpiece from the laser beam application means and a control means for judging whether a detection signal from the processing sound wave detection means falls within a predetermined permissible range.

    摘要翻译: 一种激光束机,包括用于保持工件的卡盘台和用于将激光施加到保持在卡盘台上的工件的激光束施加装置,其中,该机器还包括处理声波检测装置,用于检测当 激光束从激光束施加装置施加到工件,以及用于判断来自处理声波检测装置的检测信号是否落在预定允许范围内的控制装置。

    Wafer dividing method
    8.
    发明授权

    公开(公告)号:US07470566B2

    公开(公告)日:2008-12-30

    申请号:US11444310

    申请日:2006-06-01

    IPC分类号: H01L21/44 H01L21/48 H01L21/50

    摘要: A method of dividing a wafer having a plurality of devices, which are formed in a plurality of areas sectioned by streets formed in a lattice pattern on the front surface, and having test metal patterns which are formed on the streets, comprising the steps of: a laser beam application step for carrying out laser processing to form a dividing start point along a street on both sides of the test metal patterns by applying a laser beam along the street on both sides of the test metal patterns in the street formed on the wafer; and a dividing step for dividing the wafer which has been laser processed to form dividing start points along the dividing start points by exerting external force to the wafer, resulting in leaving the streets having the test metal patterns formed thereon behind.

    Wafer processing method
    9.
    发明申请
    Wafer processing method 有权
    晶圆加工方法

    公开(公告)号:US20050282359A1

    公开(公告)日:2005-12-22

    申请号:US11151526

    申请日:2005-06-14

    摘要: A wafer processing method for dividing a wafer having function elements in area sectioned by dividing lines formed on the front surface in a lattice pattern into individual chips along the dividing lines, comprising a deteriorated layer forming step for forming a deteriorated layer on the side of the back surface of a position at a distance corresponding to the final thickness of the chip from the front surface of the wafer by applying a laser beam capable of passing through the wafer along the dividing lines from the back surface of the wafer; a dividing step for dividing the wafer into individual chips along the dividing lines by applying external force to the wafer in which the deteriorated layer has been formed along the dividing lines; and a back surface grinding step for grinding the back surface of the wafer divided into individual chips to the final thickness of the chip.

    摘要翻译: 一种晶片处理方法,其特征在于,将沿着划分线将在前表面上形成的划分线的划分线的区域的功能元件分割为各个芯片,所述晶片处理方法包括在劣化层形成步骤中形成劣化层 通过施加能够从晶片的背面沿着划分线穿过晶片的激光束,从与晶片的前表面相对应的与芯片的最终厚度相对应的距离的位置的背面; 分割步骤,通过沿着分割线向已经形成有劣化层的晶片施加外力,沿着分割线将晶片分割成单个芯片; 以及后表面研磨步骤,用于将分成单个芯片的晶片的背面研磨至芯片的最终厚度。

    Apparatus for checking a laser processed deteriorated layer
    10.
    发明申请
    Apparatus for checking a laser processed deteriorated layer 审中-公开
    用于检查激光加工劣化层的装置

    公开(公告)号:US20050127299A1

    公开(公告)日:2005-06-16

    申请号:US11004818

    申请日:2004-12-07

    CPC分类号: G03F7/70608

    摘要: An apparatus for checking a laser processed deteriorated layer formed in the inside of a workpiece by applying a laser beam capable of passing through the workpiece to the workpiece, comprising a workpiece holding means for holding the workpiece; a light application means for applying light capable of passing through the workpiece held on the workpiece holding means to the exposed surface of the workpiece at a predetermined angle; a light receiving means for receiving light that is applied from the light application, passes through the inside of the workpiece and is reflected from the workpiece; and a display means for displaying the state of light received by the light receiving means.

    摘要翻译: 一种用于通过将能够通过工件的激光束施加到工件来检查在工件内部形成的激光加工劣化层的装置,包括用于保持工件的工件保持装置; 光施加装置,用于施加能够以保持在工件保持装置上的工件以预定角度穿过工件的暴露表面的光; 用于接收从光照射施加的光的光接收装置通过工件内部并从工件反射; 以及显示装置,用于显示由光接收装置接收的光的状态。