公开(公告)号：US08679650B2

公开(公告)日：2014-03-25

申请号：US12571499

申请日：2009-10-01

申请人： Naho Itagaki ,  Tatsuya Iwasaki ,  Katsuyuki Hoshino

发明人： Naho Itagaki ,  Tatsuya Iwasaki ,  Katsuyuki Hoshino

IPC分类号： B32B9/04 ,  C23C14/34

CPC分类号： C30B29/406 ,  C30B23/025 ,  C30B25/183 ,  C30B29/403

摘要： A laminated structure comprises a first layer comprising a crystal with six-fold symmetry, and a second layer comprising a metal oxynitride crystal formed on the first layer The second layer comprises at least one element selected from the group consisting of In, Ga, Si, Ge and Al, N, O and Zn, as main elements, and has in-plane orientation.

摘要翻译： 叠层结构包括第一层，其包含具有六重对称性的晶体，第二层包括在第一层上形成的金属氧氮化物晶体。第二层包括选自In，Ga，Si， Ge和Al，N，O和Zn作为主要元素，并具有面内取向。

公开(公告)号：US20100092800A1

公开(公告)日：2010-04-15

申请号：US12571499

申请日：2009-10-01

申请人： Naho Itagaki ,  Tatsuya Iwasaki ,  Katsuyuki Hoshino

发明人： Naho Itagaki ,  Tatsuya Iwasaki ,  Katsuyuki Hoshino

IPC分类号： B32B9/04 ,  C23C14/34

CPC分类号： C30B29/406 ,  C30B23/025 ,  C30B25/183 ,  C30B29/403

摘要： A laminated structure comprises a first layer comprising a crystal with six-fold symmetry, and a second layer comprising a metal oxynitride crystal formed on the first layer, wherein the second layer comprises at least one element selected from the group consisting of In, Ga, Si, Ge and Al, N, O and Zn, as main elements, and wherein the second layer has in-plane orientation.

摘要翻译： 叠层结构包括包含六对称晶体的第一层和形成在第一层上的金属氧氮化物晶体的第二层，其中第二层包括选自In，Ga， Si，Ge和Al，N，O和Zn作为主要元素，并且其中第二层具有面内取向。

公开(公告)号：US08885683B2

公开(公告)日：2014-11-11

申请号：US13606419

申请日：2012-09-07

申请人： Katsuyuki Hoshino ,  Yasuhiro Nagatomo ,  Shoichi Kawashima ,  Takeshi Kawashima

发明人： Katsuyuki Hoshino ,  Yasuhiro Nagatomo ,  Shoichi Kawashima ,  Takeshi Kawashima

IPC分类号： H01S5/00

CPC分类号： G02B6/1225 ,  B82Y20/00 ,  G02B2006/12107 ,  G02B2006/12169 ,  G02B2006/12176 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/32 ,  H01L2933/0083 ,  H01S5/105 ,  H01S5/32341

摘要： A process for forming a microstructure of a nitride semiconductor including (1) preparing a semiconductor structure which has a second semiconductor layer formed of a group III nitride semiconductor containing at least Al formed on a principal plane of a first semiconductor layer formed of a group III nitride semiconductor containing no Al, and which has a hole that penetrates through the second semiconductor layer and is formed in the first semiconductor layer; (2) subjecting the semiconductor structure to heat treatment under a gas atmosphere including a nitrogen element after step (1) to form a crystal plane of the group III nitride semiconductor containing no Al, on at least a part of a side wall of the hole; and (3) forming a third semiconductor layer formed of a group III nitride semiconductor on the second semiconductor layer after step (2) to cover the upper part of the hole.

摘要翻译： 一种用于形成氮化物半导体的微结构的方法，包括（1）制备半导体结构，所述半导体结构具有由在由III族形成的第一半导体层的主平面上形成的至少包含Al的III族氮化物半导体形成的第二半导体层 不含Al的氮化物半导体，其具有穿过第二半导体层并形成在第一半导体层中的孔; （2）在步骤（1）之后对包含氮元素的气体气氛进行半导体结构的热处理，以在孔的侧壁的至少一部分上形成不含Al的III族氮化物半导体的晶面 ; 以及（3）在步骤（2）之后，在所述第二半导体层上形成由III族氮化物半导体形成的第三半导体层以覆盖所述孔的上部。

公开(公告)号：US08311072B2

公开(公告)日：2012-11-13

申请号：US12773424

申请日：2010-05-04

申请人： Katsuyuki Hoshino ,  Shoichi Kawashima

发明人： Katsuyuki Hoshino ,  Shoichi Kawashima

IPC分类号： H01S5/18 ,  H01S5/12

CPC分类号： H01S5/18308 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02636 ,  H01S5/105 ,  H01S5/187 ,  H01S5/3202 ,  H01S5/32341 ,  H01S5/423 ,  H01S2304/12

摘要： A surface emitting laser array having a plurality of surface emitting lasers arranged in an array, each of the surface emitting lasers being provided with a two-dimensional photonic crystal having a resonance mode in an in-plane direction and with an active layer. The surface emitting laser has a mesa-shaped inclined side wall surface. When a maximum light-receiving angle with respect to the mesa-shaped inclined side wall surface at which an incident light is coupled with a waveguide containing the two-dimensional photonic crystal is denoted as θmax°, an angle formed by a plane of the two-dimensional photonic crystal and the mesa-shaped inclined side wall surface is controlled so as to exceed (90+θmax)° or be smaller than (90−θmax)°.

摘要翻译： 具有排列成阵列的多个表面发射激光器的表面发射激光器阵列，每个表面发射激光器都具有在面内方向上具有谐振模式的二维光子晶体和活性层。 表面发射激光器具有台面状的倾斜侧壁表面。 当相对于入射光与包含二维光子晶体的波导耦合的台面状倾斜侧壁表面的最大光接收角被表示为“最大”，由 二维光子晶体和台面状倾斜侧壁表面被控制为超过（90 +＆amp;最大）°或小于（90-＆amp;最大）°。

公开(公告)号：US20110039364A1

公开(公告)日：2011-02-17

申请号：US12914939

申请日：2010-10-28

申请人： Takeshi Kawashima ,  Katsuyuki Hoshino ,  Shoichi Kawashima ,  Yasuhiro Nagatomo

发明人： Takeshi Kawashima ,  Katsuyuki Hoshino ,  Shoichi Kawashima ,  Yasuhiro Nagatomo

IPC分类号： H01L21/302 ,  H01L21/20

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0259 ,  H01L21/0262 ,  H01L21/02667 ,  H01S5/105 ,  H01S5/183 ,  H01S2304/04

摘要： A manufacturing method of a microstructure which enables production of a deep and narrow microstructure in a GaN semiconductor with high precision is provided. The manufacturing method of a microstructure for forming a microscopic structure in a semiconductor has a configuration having a first step of forming a first GaN semiconductor layer on a substrate, a second step of forming a first hole by using etching on the first GaN semiconductor layer formed in the first narrow, and a third step of performing heat-treatment at a temperature from 850° C. to 950° C. inclusive under a gas atmosphere including nitrogen, in order to form a second narrow in which a diameter of the first hole h formed in the second step is made narrower than the diameter of the first hole in an in-plane direction of the substrate.

摘要翻译： 提供了能够高精度地生产GaN半导体中的深而窄的微结构的微结构的制造方法。 用于在半导体中形成微结构的显微组织的制造方法具有在基板上形成第一GaN半导体层的第一步骤的结构，通过在形成的第一GaN半导体层上的蚀刻来形成第一孔的第二步骤 以及在包括氮气的气体气氛下在850℃至950℃的温度下进行热处理的第一窄度和第三步骤，以形成第二狭缝，其中第一孔的直径 h形成为比基板的面内方向上的第一孔的直径窄。

公开(公告)号：US08842710B2

公开(公告)日：2014-09-23

申请号：US13058561

申请日：2010-07-27

申请人： Yasuhiro Nagatomo ,  Takeshi Kawashima ,  Katsuyuki Hoshino ,  Shoichi Kawashima

发明人： Yasuhiro Nagatomo ,  Takeshi Kawashima ,  Katsuyuki Hoshino ,  Shoichi Kawashima

IPC分类号： H01S3/08 ,  H01L21/02 ,  H01S5/20 ,  H01S5/12 ,  H01S5/323 ,  H01S5/10

CPC分类号： H01S5/1228 ,  H01L21/02389 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02667 ,  H01S5/1017 ,  H01S5/1231 ,  H01S5/2059 ,  H01S5/2095 ,  H01S5/32341

摘要： There are provided a process for producing a semiconductor device and a semiconductor device which allow conductivity distribution to be formed without making refractive index distributed even in a material system of a semiconductor difficult to be subjected to ion implantation. The process for producing a semiconductor device includes the steps of forming a semiconductor layer containing a dopant; forming a concave and convex structure on the semiconductor layer by partially removing the semiconductor layer; and forming a conductivity distribution reflecting the concave and convex structure in the semiconductor layer by performing heat treatment on the semiconductor layer in which the concave and convex structure has been formed at a temperature at which a material forming the semiconductor layer causes mass transport and filling up a hole of a concave portion of the concave and convex structure with the material forming the semiconductor layer.

摘要翻译： 提供了一种用于制造半导体器件和半导体器件的方法，其允许在不使难以进行离子注入的半导体的材料体系中即使在不使折射率分布的情况下形成导电性分布。 制造半导体器件的方法包括以下步骤：形成含有掺杂剂的半导体层; 通过部分去除半导体层在半导体层上形成凹凸结构; 并且在形成半导体层的材料导致大量运输和填充的温度下对形成有凹凸结构的半导体层进行热处理，形成反映半导体层中的凹凸结构的导电率分布 所述凹凸结构的凹部的孔与所述材料形成所述半导体层。

公开(公告)号：US20110237077A1

公开(公告)日：2011-09-29

申请号：US13002627

申请日：2010-07-27

申请人： Shoichi Kawashima ,  Takeshi Kawashima ,  Yasuhiro Nagatomo ,  Katsuyuki Hoshino

发明人： Shoichi Kawashima ,  Takeshi Kawashima ,  Yasuhiro Nagatomo ,  Katsuyuki Hoshino

IPC分类号： H01L21/263

CPC分类号： H01L29/2003 ,  B82Y20/00 ,  G02B6/1225 ,  G02B6/136 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02667 ,  H01L29/045 ,  H01S5/105 ,  H01S5/2095 ,  H01S5/32341

摘要： The method of producing a GaN-based microstructure includes a step of preparing a semiconductor structure provided with a trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering a main surface of the nitride semiconductor excluding the trench, a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the trench, a step of removing the heat-treating mask after the first heat-treatment step and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the trench on the sidewall of which the crystallographic face is formed with a nitride semiconductor.

摘要翻译： 制造GaN基微结构的方法包括制备在氮化物半导体的主表面上形成有沟槽的半导体结构和覆盖除了沟槽之外的氮化物半导体的主表面的热处理掩模的步骤，第一 在包含氮元素的气氛下对半导体结构进行热处理的热处理工序，在沟槽的侧壁的至少一部分上形成氮化物半导体的结晶面，在第一工序之后，除去热处理罩 热处理步骤和在包含氮元素的气氛下对半导体结构进行热处理的第二热处理步骤，以在氮化物半导体的形成有结晶面的侧壁上封闭沟槽的上部。

公开(公告)号：US20110134941A1

公开(公告)日：2011-06-09

申请号：US12957554

申请日：2010-12-01

申请人： Katsuyuki Hoshino ,  Yasuhiro Nagatomo

发明人： Katsuyuki Hoshino ,  Yasuhiro Nagatomo

IPC分类号： H01S3/063

CPC分类号： H01S5/105 ,  B82Y20/00 ,  H01S5/187 ,  H01S5/2031 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2304/12

摘要： Provided is a two dimensional photonic crystal surface emitting laser which can suppress light leaking outside in an in-plane direction of the two dimensional photonic crystal and an absorption loss in an active layer caused by serving as an absorbing layer without contributing to light emission, and can improve light use efficiency. The surface emitting laser has a laminated structure in which an active layer and a photonic crystal layer are laminated in a vertical direction, has a resonance mode in an in-plane direction of the photonic crystal, and extracts light in a vertical direction to a surface of the photonic crystal, wherein the laminated structure has a multi-refractive index layer including a central region made of a high refractive index medium and a peripheral portion made of a low refractive index medium with a lower refractive index than that of the high refractive index medium.

摘要翻译： 提供一种二维光子晶体表面发射激光器，其可以抑制在二维光子晶体的面内方向上向外泄漏的光和由用作吸收层而不对发光有贡献的有源层中的吸收损耗，以及 可以提高光的使用效率。 表面发射激光器具有在垂直方向上层叠有源层和光子晶体层的层叠结构，在光子晶体的面内方向具有共振模式，并且在与表面垂直的方向上提取光 的光子晶体，其中所述层叠结构具有多折射率层，所述多折射率层包括由高折射率介质构成的中心区域和由折射率低于所述高折射率的低折射率介质制成的周边部分 中。

公开(公告)号：US20100284432A1

公开(公告)日：2010-11-11

申请号：US12773424

申请日：2010-05-04

申请人： Katsuyuki Hoshino ,  Shoichi Kawashima

发明人： Katsuyuki Hoshino ,  Shoichi Kawashima

IPC分类号： H01S5/18 ,  H01L21/20

CPC分类号： H01S5/18308 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02636 ,  H01S5/105 ,  H01S5/187 ,  H01S5/3202 ,  H01S5/32341 ,  H01S5/423 ,  H01S2304/12

摘要： A surface emitting laser array having a plurality of surface emitting lasers arranged in an array, each of the surface emitting lasers being provided with a two-dimensional photonic crystal having a resonance mode in an in-plane direction and with an active layer. The surface emitting laser has a mesa-shaped inclined side wall surface. When a maximum light-receiving angle with respect to the mesa-shaped inclined side wall surface at which an incident light is coupled with a waveguide containing the two-dimensional photonic crystal is denoted as θmax°, an angle formed by a plane of the two-dimensional photonic crystal and the mesa-shaped inclined side wall surface is controlled so as to exceed (90+θmax)° or be smaller than (90−θmax)°.

摘要翻译： 具有排列成阵列的多个表面发射激光器的表面发射激光器阵列，每个表面发射激光器都具有在面内方向上具有谐振模式的二维光子晶体和活性层。 表面发射激光器具有台面状的倾斜侧壁表面。 当相对于入射光与包含二维光子晶体的波导耦合的台面状倾斜侧壁表面的最大光接收角被表示为“最大”，由 二维光子晶体和台面状倾斜侧壁表面被控制为超过（90 +＆amp;最大）°或小于（90-＆amp;最大）°。

公开(公告)号：US08791025B2

公开(公告)日：2014-07-29

申请号：US13002627

申请日：2010-07-27

申请人： Shoichi Kawashima ,  Takeshi Kawashima ,  Yasuhiro Nagatomo ,  Katsuyuki Hoshino

发明人： Shoichi Kawashima ,  Takeshi Kawashima ,  Yasuhiro Nagatomo ,  Katsuyuki Hoshino

IPC分类号： H01L21/302

CPC分类号： H01L29/2003 ,  B82Y20/00 ,  G02B6/1225 ,  G02B6/136 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/02667 ,  H01L29/045 ,  H01S5/105 ,  H01S5/2095 ,  H01S5/32341

摘要： The method of producing a GaN-based microstructure includes a step of preparing a semiconductor structure provided with a trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering a main surface of the nitride semiconductor excluding the trench, a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the trench, a step of removing the heat-treating mask after the first heat-treatment step and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the trench on the sidewall of which the crystallographic face is formed with a nitride semiconductor.

摘要翻译： 制造GaN基微结构的方法包括制备在氮化物半导体的主表面上形成有沟槽的半导体结构和覆盖除了沟槽之外的氮化物半导体的主表面的热处理掩模的步骤，第一 在包含氮元素的气氛下对半导体结构进行热处理的热处理工序，在沟槽的侧壁的至少一部分上形成氮化物半导体的结晶面，在第一工序之后，除去热处理罩 热处理步骤和在包含氮元素的气氛下对半导体结构进行热处理的第二热处理步骤，以在氮化物半导体的形成有结晶面的侧壁上封闭沟槽的上部。