公开(公告)号：US20250006598A1

公开(公告)日：2025-01-02

申请号：US18342809

申请日：2023-06-28

Applicant: NXP B.V.

Inventor： Yao Jung Chang ,  Tzu Ya Fang ,  Yu Ling Tsai ,  Jian Nian Chen ,  Yen-Chih Lin

IPC: H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

Abstract: A method of manufacturing a semiconductor device is provided. The method includes affixing a spacer structure to a bottom side of a plurality of leads of a leadframe. A semiconductor die is attached to a top side of a die pad of the leadframe. The semiconductor die, the leadframe, and the spacer structure are encapsulated with an encapsulant. Portions of the spacer structure and portions of the leads of the plurality of leads are exposed at a bottom side of the encapsulant.

公开(公告)号：US20250125159A1

公开(公告)日：2025-04-17

申请号：US18484533

申请日：2023-10-11

Applicant: NXP B.V.

Inventor： Yu Ling Tsai ,  Yao Jung Chang ,  Yen-Chih Lin ,  Tzu Ya Fang ,  Jian Nian Chen ,  Yi-Hsuan Tsai

IPC: H01L21/60 ,  H01L21/56

Abstract: A semiconductor device having dismantlable structure is provided. The method includes forming a packaged semiconductor die by mounting the semiconductor die onto a package substrate in a flip chip orientation, attaching an interposer substrate over a backside of the semiconductor die, and encapsulating with an encapsulant the semiconductor die and remaining gap region between the package substrate and the interposer substrate. A bond pad of the semiconductor die is interconnected with a conductive trace of the package substrate. The interposer substrate includes a plurality of conductive pads exposed at a top surface and interconnected with the package substrate. A dismantlable structure is attached on the top surface of the interposer substrate. A first region of the dismantlable structure covers the plurality of conductive pads.

公开(公告)号：US20240038683A1

公开(公告)日：2024-02-01

申请号：US17815638

申请日：2022-07-28

Applicant: NXP B.V.

Inventor： Tzu Ya Fang ,  Yen-Chih Lin ,  Jian Nian Chen ,  Moly Lee ,  Yi Xiu Xie ,  Vanessa Wyn Jean Tan ,  Yao Jung Chang ,  Yi-Hsuan Tsai ,  Xiu Hong Shen ,  Kuan Lin Huang

IPC: H01L23/00 ,  H01L25/065 ,  H01L23/31 ,  H01L23/48 ,  H01L23/538 ,  H01L21/683 ,  H01L21/48 ,  H01L21/56 ,  H01L25/00

CPC classification number: H01L23/562 ,  H01L25/0657 ,  H01L24/20 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5389 ,  H01L21/6835 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/565 ,  H01L21/568 ,  H01L24/19 ,  H01L25/50 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06586 ,  H01L2224/214 ,  H01L2924/17151 ,  H01L2924/351 ,  H01L2221/68372

Abstract: A method of manufacturing a semiconductor device is provided. The method includes placing a package substrate on a carrier substrate, forming a frame on the package substrate, and affixing an active side of a semiconductor die on the package substrate. The semiconductor die together with the frame and the package substrate form a cavity between the semiconductor die and the package substrate. At least a portion of the semiconductor die and the package substrate are encapsulated with an encapsulant. The frame is configured to prevent the encapsulant from entering the cavity.