Heat Actuated and Projected Lithography Systems and Methods
    4.
    发明申请
    Heat Actuated and Projected Lithography Systems and Methods 有权
    热激活和投影光刻系统和方法

    公开(公告)号:US20150286148A1

    公开(公告)日:2015-10-08

    申请号:US14439252

    申请日:2013-10-15

    摘要: In accordance with an embodiment of the disclosure, a method of patterning can include dividing an image into a set of frame sections; determining a tip pattern for a respective portion of an image to be patterned by each tip of the tip array in each frame section of the set of frame sections; disposing the tip array in a patterning position in a first location of the substrate corresponding to a location of the substrate in which the first frame section in the set of frame sections is to be patterned; projecting a first pattern of radiation onto the tip array to selectively irradiate one or more tips of the tip array and pattern the substrate, wherein the first pattern of radiation corresponds to a tip pattern for the first frame section; disposing the tip array in a patterning position in a second location of the substrate corresponding to a location of the substrate in which the second frame section in the set of frame sections is to be patterned; projecting a second pattern of radiation onto the tip array to selectively irradiate tips of the tip array and pattern the substrate, wherein the second pattern of radiation corresponds to a tip pattern for the second frame section; and repeating the disposing and projecting for each frame section in the set of frame sections to pattern the image.

    摘要翻译: 根据本公开的实施例,图案化方法可以包括将图像划分成一组帧部分; 在所述一组框架部分的每个框架部分中确定要由所述尖端阵列的每个尖端构图的图像的相应部分的尖端图案; 将所述尖端阵列布置在所述基板的第一位置中的图案化位置,所述第一位置对应于所述基板的位置,所述框架部分组中的第一框架部分将被构图; 将第一辐射模式投影到所述尖端阵列上以选择性地照射所述尖端阵列中的一个或多个尖端并对所述衬底进行图案化,其中所述第一辐射图案对应于所述第一框架部分的尖端图案; 将所述末端阵列布置在所述基板的第二位置中的对应于所述基板的位置的图案化位置中,在所述基板的位置中所述框架部分组中的第二框架部分将被图案化; 将第二辐射模式投影到所述尖端阵列上以选择性地照射所述尖端阵列的尖端并对所述衬底进行图案化,其中所述第二辐射图案对应于所述第二框架部分的尖端图案; 并且重复对所述一组帧部分中的每个帧部分的布置和投影以对图像进行图案化。