公开(公告)号：US10809619B2

公开(公告)日：2020-10-20

申请号：US14900384

申请日：2014-06-24

Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.

Inventor： Keisuke Hashimoto ,  Kenji Takase ,  Tetsuya Shinjo ,  Rikimaru Sakamoto ,  Takafumi Endo ,  Hirokazu Nishimaki

IPC: G03F7/11 ,  C09D161/22 ,  C09D161/06 ,  C08G12/08 ,  G03F7/09 ,  G03F7/40 ,  C07C39/10 ,  C07C43/178 ,  H01L21/311

Abstract: A resist underlayer film for use in lithography process which generates less sublimate, has excellent embeddability at the time of applying onto a substrate having a hole pattern, and has high dry etching resistance, wiggling resistance and heat resistance, etc. A resist underlayer film-forming composition including a resin and a crosslinkable compound of Formula (1) or Formula (2): in which Q1 is a single bond or an m1-valent organic group, R1 and R4 are each a C2-10 alkyl group or a C2-10 alkyl group having a C1-10 alkoxy group, R2 and R5 are each a hydrogen atom or a methyl group, R3 and R6 are each a C1-10 alkyl group or a C6-40 aryl group.

公开(公告)号：US10508181B2

公开(公告)日：2019-12-17

申请号：US14651998

申请日：2013-12-13

Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.

Inventor： Yasunobu Someya ,  Hiroyuki Wakayama ,  Takafumi Endo ,  Rikimaru Sakamoto

IPC: C08J5/18 ,  B05D3/02 ,  B05D1/32 ,  B05D1/00 ,  C09D139/04 ,  C09D145/00 ,  C09D201/00 ,  C09D153/00 ,  G03F7/00 ,  C08F212/32

Abstract: An underlayer film-forming composition for a self-assembled film having a polymer including 0.2% by mole or more of a unit structure of a polycyclic aromatic vinyl compound relative to all unit structures of the polymer. The polymer includes 20% by mole or more of a unit structure of an aromatic vinyl compound relative to all the unit structures of the polymer and includes 1% by mole or more of a unit structure of the polycyclic aromatic vinyl compound relative to all the unit structures of the aromatic vinyl compound. The aromatic vinyl compound includes an optionally substituted vinylnaphthalene, acenaphthylene, or vinylcarbazole, and the polycyclic aromatic vinyl compound is vinylnaphthalene, acenaphthylene, or vinylcarbazole. The aromatic vinyl compound includes an optionally substituted styrene and an optionally substituted vinylnaphthalene, acenaphthylene, or vinylcarbazole, and the polycyclic aromatic vinyl compound is vinylnaphthalene, acenaphthylene, or vinylcarbazole.

公开(公告)号：US09212255B2

公开(公告)日：2015-12-15

申请号：US14399702

申请日：2013-04-26

Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.

Inventor： Takafumi Endo ,  Rikimaru Sakamoto ,  Noriaki Fujitani

IPC: C08G63/00 ,  H01L21/308 ,  G03F7/11 ,  G03F7/09

CPC classification number: G03F7/091 ,  C08G63/00 ,  C08G63/6856 ,  C08G73/101 ,  C09D167/00 ,  C09D167/02 ,  C09D175/12 ,  G03F7/11 ,  G03F7/2037 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/0276 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086

Abstract: A composition forms a resist underlayer film showing improved adhesiveness to a resist pattern. A resist underlayer film-forming composition for lithography, including: a polymer that has a structure of Formula (1a), Formula (1b), or Formula (2) below on an end of the polymer; and an organic solvent: (where R1 is a hydrogen atom or a methyl group; each of R2 and R3 is independently a hydrogen atom or an organic group such as a hydrocarbon group, etc., the hydrocarbon group optionally has at least one of a hydroxy group and a methylthio group as substituent(s); R4 is a hydrogen atom or a hydroxy group; Q1 is an arylene group; v is 0 or 1; y is an integer of 1 to 4; w is an integer of 1 to 4; x1 is 0 or 1; and x2 is an integer of 1 to 5).

Abstract translation: 组合物形成抗蚀剂下层膜，显示出与抗蚀剂图案的粘合性提高。 一种用于光刻的抗蚀剂下层膜形成组合物，包括：聚合物末端具有式（1a），式（1b）或式（2）结构的聚合物; 和有机溶剂（其中R 1是氢原子或甲基; R 2和R 3各自独立地是氢原子或烃基等有机基团，烃基任选地具有以下中的至少一种： 羟基和甲硫基作为取代基; R4是氢原子或羟基; Q1是亚芳基; v是0或1; y是1至4的整数; w是1至 4; x1为0或1; x2为1〜5的整数）。

公开(公告)号：US20140287589A1

公开(公告)日：2014-09-25

申请号：US14352821

申请日：2012-10-12

Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.

Inventor： Takafumi Endo ,  Rikimaru Sakamoto ,  Noriaki Fujitani

IPC: H01L21/308 ,  H01L21/027

CPC classification number: H01L21/3081 ,  C08F8/14 ,  C08F20/36 ,  C08F220/32 ,  C08F220/36 ,  G03F7/11 ,  H01L21/0271 ,  C08F2220/325 ,  C08F220/24

Abstract: It is aimed to enhance adhesiveness between a resist pattern formed on a resist underlayer film and to reduce an undercut of the resist pattern. An additive for a resist underlayer film-forming composition, including: a polymer having a structural unit of Formula (1): (where R1 is a hydrogen atom or a methyl group; L is a divalent linking group; X is an acyloxy group having an amino group protected with a tert-butoxycarbonyl group or a nitrogen heterocycle protected with a tert-butoxycarbonyl group).

Abstract translation: 旨在提高形成在抗蚀剂下层膜上的抗蚀剂图案之间的粘附性，并减少抗蚀剂图案的底切。 一种抗蚀剂下层膜形成组合物的添加剂，包括：具有式（1）的结构单元的聚合物：其中R1是氢原子或甲基; L是二价连接基团; X是具有 用叔丁氧基羰基保护的氨基或用叔丁氧基羰基保护的氮杂环）。

公开(公告)号：US11674053B2

公开(公告)日：2023-06-13

申请号：US14917853

申请日：2014-09-16

Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.

Inventor： Takafumi Endo ,  Yasunobu Someya ,  Hiroyuki Wakayama ,  Rikimaru Sakamoto

IPC: C09D165/00 ,  C09D5/00 ,  C09D201/02 ,  C08L101/02 ,  C09J133/06 ,  G03F7/00 ,  C09D145/00 ,  G03F7/11 ,  G03F7/09 ,  B05D1/38 ,  B05D3/02 ,  B05D1/18 ,  B05D7/00 ,  C09D201/00 ,  C08G83/00

CPC classification number: C09D165/00 ,  B05D1/38 ,  B05D3/0254 ,  C08L101/02 ,  C09D5/00 ,  C09D145/00 ,  C09D201/00 ,  C09D201/02 ,  C09J133/066 ,  G03F7/0002 ,  G03F7/091 ,  G03F7/11 ,  B05D1/185 ,  B05D7/52 ,  C08G83/008 ,  C08G2261/148 ,  C08G2261/1422 ,  C08G2261/1426 ,  C08G2261/312 ,  C08G2261/3142 ,  C08G2261/3162 ,  C08G2261/3241 ,  C08G2261/3246 ,  C08G2261/3325

Abstract: A composition for forming an underlayer film necessary for facilitating alignment of self-assembled film into desired vertical pattern. Composition for forming an underlayer film of self-assembled film including a polymer having unit structure containing aliphatic polycyclic structure of aliphatic polycyclic compound in main chain. The polymer is a polymer having unit structure containing aliphatic polycyclic structure of aliphatic polycyclic compound with aromatic ring structure of aromatic ring-containing compound or polymer chain derived from vinyl group of vinyl group-containing compound in main chain. The polymer has unit structure of Formula (1):

X—Y  Formula (1)

wherein X is single bond, divalent group having vinyl structure as polymer chain, or divalent group having aromatic ring-containing structure as polymer chain, and Y is divalent group having aliphatic polycyclic structure as polymer chain. The aliphatic polycyclic compound is bi- to hexa-cyclic diene compound. The aliphatic polycyclic compound is dicyclopentadiene or norbornadiene.

公开(公告)号：US10191374B2

公开(公告)日：2019-01-29

申请号：US15316425

申请日：2015-05-01

Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.

Inventor： Hirokazu Nishimaki ,  Keisuke Hashimoto ,  Takafumi Endo ,  Rikimaru Sakamoto

IPC: C08G8/02 ,  G03F7/11 ,  C09D161/16 ,  G03F7/16 ,  H01L21/308 ,  G03F7/09 ,  H01L21/027

Abstract: The present invention provides a novel resist underlayer film-forming composition capable of forming a resist underlayer film that has etching resistance and excellent embeddability in a surface having concave portions and/or convex portions. A resist underlayer film-forming composition comprising a polymer having a structural unit represented by formula (1) or formula (2): (wherein X is an arylene group, n is 1 or 2, and R1, R2, R3, and R4 are each independently a hydrogen atom, a hydroxy group, a C1-3 alkyl group, or a phenyl group), and a solvent.

公开(公告)号：US10042258B2

公开(公告)日：2018-08-07

申请号：US15324542

申请日：2015-07-23

Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.

Inventor： Noriaki Fujitani ,  Takafumi Endo ,  Rikimaru Sakamoto

IPC: G03F7/004 ,  G03F7/11 ,  G03F7/20 ,  G03F7/16 ,  G03F7/38 ,  G03F7/32 ,  G03F7/40 ,  G03F7/038 ,  G03F7/039 ,  C09D161/06 ,  C09D125/16 ,  H01L21/027 ,  G03F7/09 ,  C08F220/22 ,  C08F220/18 ,  C08F220/30 ,  H01L21/311

Abstract: This composition for forming an extreme-ultraviolet (EUV) or electron-beam upper-layer resist film including (a) a polymer (P) and (b) a solvent, the solvent containing 1 to 13 mass % of a C4-12 ketone compound with respect to the entire solvent, is used in the lithography process of a procedure for manufacturing a semiconductor device. Without needing to be intermixed with a resist, and particularly on the occasion of EUV exposure, the composition for forming an EUV or electron-beam upper-layer resist film blocks undesirable exposure light, e.g., ultraviolet (UV) or deep ultraviolet (DUV) rays, and selectively transmits only the EUV rays, and can be developed using a developing solution after exposure.

公开(公告)号：US10017664B2

公开(公告)日：2018-07-10

申请号：US14786044

申请日：2014-05-08

Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.

Inventor： Takafumi Endo ,  Keisuke Hashimoto ,  Hirokazu Nishimaki ,  Rikimaru Sakamoto

IPC: C07C39/15 ,  G03F7/11 ,  G03F7/32 ,  C07C37/68 ,  G03F7/16 ,  C09D179/02 ,  C09D179/04 ,  C09D161/12 ,  G03F7/09 ,  H01L21/311 ,  C08G73/06

CPC classification number: C09D179/02 ,  C08G73/06 ,  C09D161/12 ,  C09D179/04 ,  G03F7/091 ,  G03F7/094 ,  H01L21/31138 ,  H01L21/31144

Abstract: Resist underlayer film-forming composition for forming resist underlayer film with high dry etching resistance, wiggling resistance and exerts good flattening property and embedding property for uneven parts, including resin obtained by reacting organic compound A including aromatic ring and aldehyde B having at least two aromatic hydrocarbon ring groups having phenolic hydroxy group and having structure wherein the aromatic hydrocarbon ring groups are bonded through tertiary carbon atom. The aldehyde B may be compound of Formula (1): The obtained resin may have a unit structure of Formula (2): Ar1 and Ar2 each are C6-40 aryl group. The organic compound A including aromatic ring may be aromatic amine or phenolic hydroxy group-containing compound. The composition may contain further solvent, acid and/or acid generator, or crosslinking agent. Forming resist pattern used for semiconductor production, including forming resist underlayer film by applying the resist underlayer film-forming composition onto semiconductor substrate and baking it.

公开(公告)号：US09165782B2

公开(公告)日：2015-10-20

申请号：US14352821

申请日：2012-10-12

Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.

Inventor： Takafumi Endo ,  Rikimaru Sakamoto ,  Noriaki Fujitani

IPC: C09K13/06 ,  H01L21/308 ,  C08F20/36 ,  C08F220/36 ,  G03F7/11 ,  C08F220/32 ,  C08F8/14 ,  H01L21/027

CPC classification number: H01L21/3081 ,  C08F8/14 ,  C08F20/36 ,  C08F220/32 ,  C08F220/36 ,  G03F7/11 ,  H01L21/0271 ,  C08F2220/325 ,  C08F220/24

Abstract: It is aimed to enhance adhesiveness between a resist pattern formed on a resist underlayer film and to reduce an undercut of the resist pattern. An additive for a resist underlayer film-forming composition, including: a polymer having a structural unit of Formula (1): (where R1 is a hydrogen atom or a methyl group; L is a divalent linking group; X is an acyloxy group having an amino group protected with a tert-butoxycarbonyl group or a nitrogen heterocycle protected with a tert-butoxycarbonyl group).

Abstract translation: 旨在提高形成在抗蚀剂下层膜上的抗蚀剂图案之间的粘合性，并减少抗蚀剂图案的底切。 一种抗蚀剂下层膜形成用组合物的添加剂，其特征在于，具有式（1）的结构单元的聚合物：（其中，R 1为氢原子或甲基，L为二价连接基，X为具有 用叔丁氧基羰基保护的氨基或用叔丁氧基羰基保护的氮杂环）。

公开(公告)号：US09046768B2

公开(公告)日：2015-06-02

申请号：US14350191

申请日：2012-09-26

Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.

Inventor： Ryuji Ohnishi ,  Takafumi Endo ,  Rikimaru Sakamoto

IPC: G03F7/26 ,  G03F7/027 ,  G03F7/11

CPC classification number: G03F7/027 ,  G03F7/11

Abstract: A resist overlayer film composition for lithography from which a resist overlayer film is formed. A resist overlayer film forming composition including a benzene compound having at least one amino group. A resist may be an EUV resist or an electron beam resist. The benzene compound may have at least one amino group and at least one alkyl group, one or two amino groups and one to four alkyl groups, or may be a compound of Formula (1): where R1 to R5 are independently a hydrogen atom, a C1-10 alkyl group such as methyl, ethyl or isopropyl, or an amino group.

Abstract translation: 用于光刻的抗蚀剂覆盖膜组合物，其中形成抗蚀剂覆盖膜。 一种抗蚀剂覆盖膜形成组合物，其包含具有至少一个氨基的苯化合物。 抗蚀剂可以是EUV抗蚀剂或电子束抗蚀剂。 苯化合物可以具有至少一个氨基和至少一个烷基，一个或两个氨基和一至四个烷基，或者可以是式（1）的化合物：其中R 1至R 5独立地是氢原子， C 1-10烷基如甲基，乙基或异丙基，或氨基。