公开(公告)号：US20140043110A1

公开(公告)日：2014-02-13

申请号：US14055104

申请日：2013-10-16

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Tsutomu KOBORI ,  Shigeki KOYA ,  Akishige NAKAJIMA ,  Yasushi SHIGENO

IPC: H01P1/15

CPC classification number: H01P1/15 ,  H04B1/48

Abstract: A semiconductor apparatus includes multiple field effect transistors provided between an antenna terminal to be connected to an antenna and multiple external terminals through which RF signals are capable of being supplied and a voltage generating circuit. When the field effect transistors provided between one of the multiple external terminals and the antenna terminal are turned off, the voltage generating unit charges a capacitor via a resistor circuit by switching the polarity of the RF signal to be supplied to the other external terminal with respect to the control signal and outputs a voltage based on a sum of the charge voltage and the voltage of the control signal as the gate drive voltage. The resistor circuit includes a first resistor including positive temperature characteristics and a second resistor including negative temperature characteristics.

Abstract translation: 半导体装置包括设置在要连接到天线的天线端子与能够提供RF信号的多个外部端子之间的多个场效应晶体管和电压产生电路。 当设置在多个外部端子中的一个外部端子和天线端子之间的场效应晶体管截止时，电压产生单元通过电阻电路对电容器充电，通过将要提供给另一个外部端子的RF信号的极性相对于 并输出基于充电电压和控制信号的电压之和的电压作为栅极驱动电压。 电阻电路包括具有正温度特性的第一电阻器和包括负温度特性的第二电阻器。

公开(公告)号：US20140361406A1

公开(公告)日：2014-12-11

申请号：US14469674

申请日：2014-08-27

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Satoshi SASAKI ,  Yasunari UMEMOTO ,  Yasuo OSONE ,  Tsutomu KOBORI ,  Chushiro KUSANO ,  Isao OHBU ,  Kenji SASAKI

IPC: H01L29/73 ,  H01L49/02 ,  H01L29/08 ,  H01L27/06

CPC classification number: H01L29/7304 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/042 ,  H01L27/0605 ,  H01L27/067 ,  H01L28/40 ,  H01L29/0808 ,  H01L29/7371 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/19032 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45099

Abstract: A radio communication device includes a power amplifier having a semiconductor device formed with a plurality of unit transistors. Base electrodes of the unit transistors are connected with each other by a base line, and an input capacitor is connected to the base line such that the input capacitor is commonly and electrically connected to the base electrodes of a plurality of the unit transistors.

Abstract translation: 无线电通信装置包括具有形成有多个单位晶体管的半导体器件的功率放大器。 单元晶体管的基极通过基线相互连接，输入电容器连接到基极线，使得输入电容器与多个单位晶体管的基极电连接。

公开(公告)号：US20210013164A1

公开(公告)日：2021-01-14

申请号：US16925006

申请日：2020-07-09

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Tsutomu KOBORI ,  Hiroshi OKABE ,  Shigeru YOSHIDA ,  Shingo YANAGIHARA ,  Yoshifumi TAKAHASHI

IPC: H01L23/66 ,  H01L27/06 ,  H01L49/02 ,  H01L29/737

Abstract: A ground pad is disposed on a substrate. A plurality of transistors, each grounded at an emitter thereof, are in a first direction on a surface of the substrate. An input line connected to bases of the transistors is on the substrate. At least two shunt inductors are each connected at one end thereof to the input line and connected at the other end thereof to the ground pad. In the first direction, the two shunt inductors are on opposite sides of a center of a region where the transistors are arranged.

公开(公告)号：US20210344312A1

公开(公告)日：2021-11-04

申请号：US17242815

申请日：2021-04-28

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Tsutomu KOBORI ,  Shingo YANAGIHARA ,  Yoshifumi TAKAHASHI ,  Hiroshi OKABE

IPC: H03F3/24 ,  H03F3/195 ,  H01L23/31

Abstract: A power amplifier device includes a semiconductor substrate; a plurality of first transistors that are provided on the semiconductor substrate and receive input of a radio-frequency signal; a plurality of second transistors that are provided on the semiconductor substrate and electrically connected to the respective plurality of first transistors, and output a radio-frequency output signal obtained by amplifying the radio-frequency signal; a plurality of first bumps provided so as to overlay the respective plurality of first transistors; and a second bump provided away from the plurality of first bumps and provided so as not to overlay the plurality of first transistors and the plurality of second transistors. When viewed in plan from a direction perpendicular to a surface of the semiconductor substrate, a first transistor and a first bump, a second transistor, the second bump, a second transistor, and a first transistor and a first bump are arranged in sequence.