TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATORS AND FILTERS WITH TRAP-RICH LAYER

    公开(公告)号:US20250023540A1

    公开(公告)日:2025-01-16

    申请号:US18904039

    申请日:2024-10-01

    Inventor: Patrick TURNER

    Abstract: An acoustic resonator device is provided that includes a substrate comprising a base and an intermediate layer, the intermediate layer comprising a silicon nitride trap-rich layer: a dielectric layer adjacent to the silicon nitride trap-rich layer; a piezoelectric layer having front and back surfaces, the back surface facing the dielectric layer; and an interdigital transducer (IDT) on the piezoelectric layer such that interleaved fingers of the IDT extend on the piezoelectric layer.

    TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR PACKAGE

    公开(公告)号:US20250055441A1

    公开(公告)日:2025-02-13

    申请号:US18925553

    申请日:2024-10-24

    Abstract: A radio frequency filter includes bulk acoustic resonator chips that each include a substrate; a piezoelectric plate that includes multiple separate plates; and a conductor pattern on the piezoelectric layer and including an interdigitated transducer (IDT) with interleaved fingers on the piezoelectric layer opposite the substrate. The filter further includes an interposer having a surface facing the piezoelectric layer of each of the plurality of bulk acoustic resonator chips; a conductor pattern on the surface of the interposer; a conductive metal bump between the piezoelectric layer and the interposer that electrically connects the plurality of bulk acoustic resonator chips to the interposer; and a cover bonded to the substrates of the plurality of bulk acoustic resonator chips and to the interposer, wherein the cover seals an interior of the plurality bulk acoustic resonator chips.

    TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH CONTROLLED CONDUCTOR SIDEWALL ANGLES

    公开(公告)号:US20230051876A1

    公开(公告)日:2023-02-16

    申请号:US17975749

    申请日:2022-10-28

    Abstract: Acoustic resonator devices and methods are disclosed. An acoustic resonator device includes a piezoelectric plate having opposed front and back surfaces. A first electrode and a second electrode are formed on the front surface of the piezoelectric plate, the first and second electrodes and the piezoelectric plate configured such that a radio frequency signal applied between the first and second electrodes excites a shear primary acoustic mode in the piezoelectric plate. The first electrode and the second electrode have trapezoidal cross-sectional shapes. A sidewall angle of at least one side surface of the first electrode and a sidewall angle of at least one side surface of the second electrode are greater than or equal to 70 degrees and less than or equal to 110 degrees.

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