TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR PACKAGE

    公开(公告)号:US20250055441A1

    公开(公告)日:2025-02-13

    申请号:US18925553

    申请日:2024-10-24

    Abstract: A radio frequency filter includes bulk acoustic resonator chips that each include a substrate; a piezoelectric plate that includes multiple separate plates; and a conductor pattern on the piezoelectric layer and including an interdigitated transducer (IDT) with interleaved fingers on the piezoelectric layer opposite the substrate. The filter further includes an interposer having a surface facing the piezoelectric layer of each of the plurality of bulk acoustic resonator chips; a conductor pattern on the surface of the interposer; a conductive metal bump between the piezoelectric layer and the interposer that electrically connects the plurality of bulk acoustic resonator chips to the interposer; and a cover bonded to the substrates of the plurality of bulk acoustic resonator chips and to the interposer, wherein the cover seals an interior of the plurality bulk acoustic resonator chips.

    FILTER USING TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATORS WITH DIVIDED FREQUENCY-SETTING DIELECTRIC LAYERS

    公开(公告)号:US20250023539A1

    公开(公告)日:2025-01-16

    申请号:US18900008

    申请日:2024-09-27

    Abstract: An acoustic filter is provide that includes a substrate; a piezoelectric plate attached to the substrate; and a plurality of bulk acoustic resonators including one or more shunt resonators and one or more series resonators. One or more of the shunt resonators includes an interdigital transducer having interdigital fingers on the piezoelectric plate; a front-side frequency setting layer at least partially on a front side of the at least one shunt resonator; and a back-side frequency setting layer on a back side of the at least one shunt resonator. Moreover, a thickness of the back-side frequency setting layer is at least 30% of a total thickness of the front-side frequency setting layer and the back-side frequency setting layer.

    TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR PACKAGE

    公开(公告)号:US20250007482A1

    公开(公告)日:2025-01-02

    申请号:US18829076

    申请日:2024-09-09

    Abstract: A bulk acoustic resonator device is provided that includes a bulk acoustic resonator chip having a substrate; a piezoelectric layer attached to the substrate either directly or via one or more intermediate layers; and a first conductor pattern on the piezoelectric layer, the first conductor pattern comprising an interdigitated transducer (IDT). Moreover, an interposer is provided having a surface facing the piezoelectric layer and having a second conductor pattern on the surface of the interposer. A conductive metal bump is between the piezoelectric layer and the interposer that electrically connects the first conductor pattern to the second conductor pattern; and a cover is bonded both to the substrate and to a portion of the surface of the interposer. The cover seals an interior of the bulk acoustic resonator chip.

    ACOUSTIC WAVE DEVICE
    10.
    发明公开

    公开(公告)号:US20240097649A1

    公开(公告)日:2024-03-21

    申请号:US18510873

    申请日:2023-11-16

    CPC classification number: H03H9/205 H03H9/02015 H03H9/02157

    Abstract: An acoustic wave device is provided that includes a piezoelectric layer and first and second resonators. The first resonator includes a first functional electrode and a first dielectric film on the piezoelectric layer. The second resonator includes a second functional electrode and a second dielectric film on the piezoelectric layer. The piezoelectric layer includes first and second resonator portions respectively including portions of the first and second resonators. Moreover, a resonant frequency of the first resonator is lower than that of the second resonator. A thickness of the first resonator portion is greater than that of the second resonator portion, and ts1/tp1≤ts2/tp2 is satisfied, where tp1, tp2, ts1, and ts2 are respectively thicknesses of the first and second resonator portions and the first and second dielectric films.

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