公开(公告)号：US20240195384A1

公开(公告)日：2024-06-13

申请号：US18524193

申请日：2023-11-30

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Douglas JACHOWSKI ,  Patrick TURNER ,  Chris O'BRIEN

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/02 ,  H03H9/13 ,  H03H9/205

CPC classification number: H03H9/174 ,  H03H3/02 ,  H03H9/02228 ,  H03H9/13 ,  H03H9/205 ,  H03H2003/023

Abstract: An acoustic resonator is provided that includes a substrate; a first piezoelectric layer having first and second surfaces that oppose each other, with the second surface coupled to the substrate directly or via one or more intermediate layers; a second piezoelectric layer having first and second opposing surfaces, with the first surface coupled to the first surface of the first piezoelectric layer and opposite to the substrate; an etch stop layer disposed between the respective first surfaces of the first and second piezoelectric layers; and first and second interdigital transducers (IDTs) on at least one of the first and second piezoelectric layers, respectively. Moreover, a portion of one of the first and second piezoelectric layers is removed between the second surface of the respective piezoelectric layer and the etch stop.

公开(公告)号：US20250015774A1

公开(公告)日：2025-01-09

申请号：US18893017

申请日：2024-09-23

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Albert CARDONA ,  Andrew KAY ,  Chris O'BRIEN

IPC: H03H3/02 ,  H03H9/02 ,  H03H9/205 ,  H03H9/56

Abstract: An acoustic resonator device is provided that includes a wafer having a wafer surface and a wafer conductor pattern on the wafer surface; a piezoelectric layer having front and back surfaces, a portion of the piezoelectric layer being over a cavity between the wafer and the piezoelectric layer, and the wafer conductor pattern; a device conductor pattern including a first metal layer including an interdigital transducer on the front surface of the piezoelectric layer and facing the wafer, and a second metal layer attached to a portion of the device conductor pattern to provide an electrical connection between the IDT and the wafer conductor pattern. The second metal layer is bonded to the wafer conductor pattern and the piezoelectric layer comprises openings extending therethrough.