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    Methods Of Treating Semiconductor Substrates, Methods Of Forming Openings During Semiconductor Fabrication, And Methods Of Removing Particles From Over Semiconductor Substrates
    2.
    发明申请
    Methods Of Treating Semiconductor Substrates, Methods Of Forming Openings During Semiconductor Fabrication, And Methods Of Removing Particles From Over Semiconductor Substrates 有权
    半导体衬底处理方法，半导体制造过程中形成开口的方法以及从半导体衬底去除微粒的方法

    公开(公告)号：US20130302995A1

    公开(公告)日：2013-11-14

    申请号：US13948043

    申请日：2013-07-22

    Applicant: Micron Technology, Inc.

    Inventor： Janos Fucsko ,  Niraj B. Rana ,  Sandra Tagg ,  Robert J. Hanson ,  Gundu M. Sabde ,  Donald L. Yates ,  Patrick M. Flynn ,  Prashant Raghu ,  Kyle Grant

    IPC: H01L21/306

    CPC classification number: H01L21/30604 ,  H01L21/02052 ,  H01L21/31111

    Abstract: Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath.

    Abstract translation: 一些实施方案包括处理半导体衬底的方法。 衬底可以暴露于连续变化的一个或多个条件。 条件可以包括温度梯度，一种或多种淬灭蚀刻剂的组合物的浓度梯度，有助于除去颗粒的pH梯度和/或一种或多种有助于除去颗粒的组合物的浓度梯度。 可以通过将半导体衬底放置在流动的冲洗溶液浴中来赋予连续变化的条件，浴中具有至少两条在其中提供漂洗溶液的进料管线。 供给管线中的一个可以处于第一状态，另一个可以处于与第一条件不同的第二条件。 可以改变通过每个进料管提供给浴的冲洗溶液的相对量，以连续地改变浴内的状态。

    Methods of treating semiconductor substrates, methods of forming openings during semiconductor fabrication, and methods of removing particles from over semiconductor substrates
    3.
    发明授权
    Methods of treating semiconductor substrates, methods of forming openings during semiconductor fabrication, and methods of removing particles from over semiconductor substrates 有权
    处理半导体衬底的方法，半导体制造期间形成开口的方法，以及从半导体衬底上去除颗粒的方法

    公开(公告)号：US08969217B2

    公开(公告)日：2015-03-03

    申请号：US13948043

    申请日：2013-07-22

    Applicant: Micron Technology, Inc.

    Inventor： Janos Fucsko ,  Niraj B. Rana ,  Sandra Tagg ,  Robert J. Hanson ,  Gundu M. Sabde ,  Donald L. Yates ,  Patrick M. Flynn ,  Prashant Raghu ,  Kyle Grant

    IPC: H01L21/302 ,  H01L21/461 ,  C03C15/00 ,  C03C25/68 ,  B08B3/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/306

    CPC classification number: H01L21/30604 ,  H01L21/02052 ,  H01L21/31111

    Abstract: Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath.

    Abstract translation: 一些实施方案包括处理半导体衬底的方法。 衬底可以暴露于连续变化的一个或多个条件。 条件可以包括温度梯度，一种或多种淬灭蚀刻剂的组合物的浓度梯度，有助于除去颗粒的pH梯度和/或一种或多种有助于除去颗粒的组合物的浓度梯度。 可以通过将半导体衬底放置在流动的漂洗溶液浴中来赋予连续变化的条件，浴中具有至少两条在其中提供漂洗溶液的进料管线。 供给管线中的一个可以处于第一状态，另一个可以处于与第一条件不同的第二条件。 可以改变通过每个进料管提供给浴的冲洗溶液的相对量，以连续地改变浴内的状态。

    MEMORY DEVICE WITH LATERALLY FORMED MEMORY CELLS
    4.
    发明申请
    MEMORY DEVICE WITH LATERALLY FORMED MEMORY CELLS 有权

    公开(公告)号：US20220384722A1

    公开(公告)日：2022-12-01

    申请号：US17332628

    申请日：2021-05-27

    Applicant: Micron Technology, Inc.

    Inventor： Thomas M. Graettinger ,  Lorenzo Fratin ,  Patrick M. Flynn ,  Enrico Varesi ,  Paolo Fantini

    IPC: H01L45/00

    Abstract: Methods, systems, and devices for a memory device with laterally formed memory cells are described. A material stack that includes a conductive layer between multiple dielectric layers may be formed, where the conductive layer and dielectric layers may form a channel in a sidewall of the material stack. The channel may be filled with one or more materials, where a first side of an outermost material of the one or more materials may be exposed. An opening may be formed in the material stack that exposes a second side of at least one material of the one or more materials. The opening may be used to replace a portion of the at least one material with a chalcogenide material where the electrode materials may be formed before replacing the portion of the at least one material with the chalcogenide material.

    MEMORY DEVICE WITH LATERALLY FORMED MEMORY CELLS
    6.
    发明公开
    MEMORY DEVICE WITH LATERALLY FORMED MEMORY CELLS 审中-公开

    公开(公告)号：US20240196765A1

    公开(公告)日：2024-06-13

    申请号：US18545636

    申请日：2023-12-19

    Applicant: Micron Technology, Inc.

    Inventor： Thomas M. Graettinger ,  Lorenzo Fratin ,  Patrick M. Flynn ,  Enrico Varesi ,  Paolo Fantini

    IPC: H10N70/00

    CPC classification number: H10N70/8265 ,  H10N70/021 ,  H10N70/841 ,  H10N70/882 ,  H10N70/883

    Abstract: Methods, systems, and devices for a memory device with laterally formed memory cells are described. A material stack that includes a conductive layer between multiple dielectric layers may be formed, where the conductive layer and dielectric layers may form a channel in a sidewall of the material stack. The channel may be filled with one or more materials, where a first side of an outermost material of the one or more materials may be exposed. An opening may be formed in the material stack that exposes a second side of at least one material of the one or more materials. The opening may be used to replace a portion of the at least one material with a chalcogenide material where the electrode materials may be formed before replacing the portion of the at least one material with the chalcogenide material.

    Memory device with laterally formed memory cells
    8.
    发明授权
    Memory device with laterally formed memory cells 有权

    公开(公告)号：US11864475B2

    公开(公告)日：2024-01-02

    申请号：US17332628

    申请日：2021-05-27

    Applicant: Micron Technology, Inc.

    Inventor： Thomas M. Graettinger ,  Lorenzo Fratin ,  Patrick M. Flynn ,  Enrico Varesi ,  Paolo Fantini

    IPC: H10N70/00

    CPC classification number: H10N70/8265 ,  H10N70/021 ,  H10N70/841 ,  H10N70/882 ,  H10N70/883

    Abstract: Methods, systems, and devices for a memory device with laterally formed memory cells are described. A material stack that includes a conductive layer between multiple dielectric layers may be formed, where the conductive layer and dielectric layers may form a channel in a sidewall of the material stack. The channel may be filled with one or more materials, where a first side of an outermost material of the one or more materials may be exposed. An opening may be formed in the material stack that exposes a second side of at least one material of the one or more materials. The opening may be used to replace a portion of the at least one material with a chalcogenide material where the electrode materials may be formed before replacing the portion of the at least one material with the chalcogenide material.

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