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1.发明授权Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers 有权具有合成反铁磁存储层和非固定参考层的磁性随机存取存储器公开(公告)号：US08852677B2
公开(公告)日：2014-10-07
申请号：US13566132
申请日：2012-08-03
CPC分类号： G11C11/161 , H01L43/08 , H01L43/12 , Y10T428/31953 , Y10T428/32 , Y10T428/325
摘要： A method for fabricating a synthetic antiferromagnetic device, includes depositing a magnesium oxide spacer layer on a reference layer having a first and second ruthenium layer, depositing a cobalt iron boron layer on the magnesium oxide spacer layer; and depositing a third ruthenium layer on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0-18 angstroms.
摘要翻译： 一种制造合成反铁磁装置的方法，包括在具有第一和第二钌层的参考层上沉积氧化镁间隔层，在氧化镁间隔层上沉积钴铁硼层; 以及在所述钴铁硼层上沉积第三钌层，所述第三钌层的厚度约为0-18埃。
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2.发明申请MAGNETIC RANDOM ACCESS MEMORY WITH SYNTHETIC ANTIFERROMAGNETIC STORAGE LAYERS AND NON-PINNED REFERENCE LAYERS 有权具有合成抗真菌储存层和非引导参考层的磁性随机存取存储器公开(公告)号：US20140038309A1
公开(公告)日：2014-02-06
申请号：US13566132
申请日：2012-08-03
IPC分类号： H01L43/10
CPC分类号： G11C11/161 , H01L43/08 , H01L43/12 , Y10T428/31953 , Y10T428/32 , Y10T428/325
摘要： A method for fabricating a synthetic antiferromagnetic device, includes depositing a magnesium oxide spacer layer on a reference layer having a first and second ruthenium layer, depositing a cobalt iron boron layer on the magnesium oxide spacer layer; and depositing a third ruthenium layer on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0-18 angstroms.
摘要翻译： 一种制造合成反铁磁装置的方法，包括在具有第一和第二钌层的参考层上沉积氧化镁间隔层，在氧化镁间隔层上沉积钴铁硼层; 以及在所述钴铁硼层上沉积第三钌层，所述第三钌层的厚度约为0-18埃。
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3.发明申请MAGNETIC RANDOM ACCESS MEMORY WITH SYNTHETIC ANTIFERROMAGNETIC STORAGE LAYERS AND NON-PINNED REFERENCE LAYERS 有权具有合成抗真菌储存层和非引导参考层的磁性随机存取存储器公开(公告)号：US20140037990A1
公开(公告)日：2014-02-06
申请号：US13562868
申请日：2012-07-31
IPC分类号： G11B5/66
CPC分类号： G11C11/161 , H01L43/08 , H01L43/12 , Y10T428/31953 , Y10T428/32 , Y10T428/325
摘要： A synthetic antiferromagnetic device includes a reference layer having a first and second ruthenium layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer and a third ruthenium layer disposed on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0 angstroms to 18 angstroms.
摘要翻译： 合成反铁磁装置包括具有第一和第二钌层的参考层，设置在参考层上的氧化镁间隔层，设置在氧化镁间隔层上的钴铁硼层和设置在钴铁硼上的第三钌层 第三钌层的厚度为约0埃至18埃。
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公开(公告)号：US08928100B2
公开(公告)日：2015-01-06
申请号：US13168477
申请日：2011-06-24
CPC分类号： H01L43/12 , B82Y40/00 , H01F10/3254 , H01F10/329 , H01F41/307 , H01L43/08
摘要： Embodiments are directed to STT MRAM devices. One embodiment of an STT MRAM device includes a reference layer, a tunnel barrier layer, a free layer and one or more conductive vias. The reference layer is configured to have a fixed magnetic moment. In addition, the tunnel barrier layer is configured to enable electrons to tunnel between the reference layer and the free layer through the tunnel barrier layer. The free layer is disposed beneath the tunnel barrier layer and is configured to have an adaptable magnetic moment for the storage of data. The conductive via is disposed beneath the free layer and is connected to an electrode. Further, the conductive via has a width that is smaller than a width of the free layer such that a width of an active STT area for the storage of data in the free layer is defined by the width of the conductive via.
摘要翻译： 实施例针对STT MRAM设备。 STT MRAM器件的一个实施例包括参考层，隧道势垒层，自由层和一个或多个导电通孔。 参考层被配置为具有固定的磁矩。 此外，隧道势垒层被配置为使得电子能够通过隧道势垒层在参考层和自由层之间隧穿。 自由层设置在隧道势垒层之下，并被配置为具有用于存储数据的适应性磁矩。 导电通孔设置在自由层下方并连接到电极。 此外，导电通孔的宽度小于自由层的宽度，使得用于存储自由层中的数据的活动STT区域的宽度由导电通孔的宽度限定。
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5.发明授权Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers 有权具有合成反铁磁存储层和非固定参考层的磁性随机存取存储器公开(公告)号：US08852762B2
公开(公告)日：2014-10-07
申请号：US13562868
申请日：2012-07-31
CPC分类号： G11C11/161 , H01L43/08 , H01L43/12 , Y10T428/31953 , Y10T428/32 , Y10T428/325
摘要： A synthetic antiferromagnetic device includes a reference layer having a first and second ruthenium layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer and a third ruthenium layer disposed on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0 angstroms to 18 angstroms.
摘要翻译： 合成反铁磁装置包括具有第一和第二钌层的参考层，设置在参考层上的氧化镁间隔层，设置在氧化镁间隔层上的钴铁硼层和设置在钴铁硼上的第三钌层 第三钌层的厚度为约0埃至18埃。
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6.发明授权Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory 有权具有垂直磁各向异性的磁性堆叠，用于自旋动量传递磁阻随机存取存储器公开(公告)号：US08866207B2
公开(公告)日：2014-10-21
申请号：US13602533
申请日：2012-09-04
CPC分类号： G11C11/161 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetic tunnel junction (MTJ) includes a magnetic free layer, having a variable magnetization direction; an insulating tunnel barrier located adjacent to the free layer; a magnetic fixed layer having an invariable magnetization direction, the fixed layer disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer, wherein the free layer and the fixed layer have perpendicular magnetic anisotropy; and one or more of: a composite fixed layer, the composite fixed layer comprising a dusting layer, a spacer layer, and a reference layer; a synthetic antiferromagnetic (SAF) fixed layer structure, the SAF fixed layer structure comprising a SAF spacer located between the fixed layer and a second fixed magnetic layer; and a dipole layer, wherein the free layer is located between the dipole layer and the tunnel barrier.
摘要翻译： 磁性隧道结（MTJ）包括具有可变磁化方向的无磁性层; 位于邻近自由层的绝缘隧道屏障; 具有不变磁化方向的磁性固定层，所述固定层邻近所述隧道势垒设置，使得所述隧道势垒位于所述自由层和所述固定层之间，其中所述自由层和所述固定层具有垂直的磁各向异性; 以及复合固定层中的一个或多个，所述复合固定层包括除尘层，间隔层和参考层; 合成反铁磁（SAF）固定层结构，SAF固定层结构包括位于固定层和第二固定磁性层之间的SAF间隔物; 和偶极子层，其中自由层位于偶极层和隧道势垒之间。
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7.发明申请MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER AND TUNNEL BARRIER 审中-公开磁铁隧道与铁矿石层之间的自由层和隧道障碍公开(公告)号：US20130005052A1
公开(公告)日：2013-01-03
申请号：US13604236
申请日：2012-09-05
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , B82Y40/00 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F41/307 , H01L43/08
摘要： A magnetic tunnel junction (MTJ) for a magnetic random access memory (MRAM) includes a magnetic free layer having a variable magnetization direction; an iron (Fe) dusting layer formed on the free layer; an insulating tunnel barrier formed on the dusting layer; and a magnetic fixed layer having an invariable magnetization direction, disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer; wherein the free layer and the fixed layer have perpendicular magnetic anisotropy and are magnetically coupled through the tunnel barrier.
摘要翻译： 用于磁性随机存取存储器（MRAM）的磁性隧道结（MTJ）包括具有可变磁化方向的无磁性层; 形成在自由层上的铁（Fe）除尘层; 形成在除尘层上的绝缘隧道屏障; 以及具有不变磁化方向的磁性固定层，邻近所述隧道势垒设置，使得所述隧道势垒位于所述自由层和所述固定层之间; 其中自由层和固定层具有垂直的磁各向异性并且通过隧道势垒磁耦合。
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8.发明申请MAGNETIC STACKS WITH PERPENDICULAR MAGNETIC ANISOTROPY FOR SPIN MOMENTUM TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY 有权具有用于旋转磁传递随机访问存储器的全息磁性ANISOTROPY的磁性堆叠公开(公告)号：US20130005051A1
公开(公告)日：2013-01-03
申请号：US13602533
申请日：2012-09-04
IPC分类号： H01L43/06
CPC分类号： G11C11/161 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetic tunnel junction (MTJ) includes a magnetic free layer, having a variable magnetization direction; an insulating tunnel barrier located adjacent to the free layer; a magnetic fixed layer having an invariable magnetization direction, the fixed layer disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer, wherein the free layer and the fixed layer have perpendicular magnetic anisotropy; and one or more of: a composite fixed layer, the composite fixed layer comprising a dusting layer, a spacer layer, and a reference layer; a synthetic antiferromagnetic (SAF) fixed layer structure, the SAF fixed layer structure comprising a SAF spacer located between the fixed layer and a second fixed magnetic layer; and a dipole layer, wherein the free layer is located between the dipole layer and the tunnel barrier.
摘要翻译： 磁性隧道结（MTJ）包括具有可变磁化方向的无磁性层; 位于邻近自由层的绝缘隧道屏障; 具有不变磁化方向的磁性固定层，所述固定层邻近所述隧道势垒设置，使得所述隧道势垒位于所述自由层和所述固定层之间，其中所述自由层和所述固定层具有垂直的磁各向异性; 以及复合固定层中的一个或多个，所述复合固定层包括除尘层，间隔层和参考层; 合成反铁磁（SAF）固定层结构，SAF固定层结构包括位于固定层和第二固定磁性层之间的SAF间隔物; 和偶极子层，其中自由层位于偶极层和隧道势垒之间。
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9.发明申请MAGNETIC STACKS WITH PERPENDICULAR MAGNETIC ANISOTROPY FOR SPIN MOMENTUM TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY 审中-公开具有用于旋转磁传递随机访问存储器的全息磁性ANISOTROPY的磁性堆叠公开(公告)号：US20120267733A1
公开(公告)日：2012-10-25
申请号：US13093287
申请日：2011-04-25
IPC分类号： H01L29/82 , H01L21/8239
CPC分类号： G11C11/161 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetic tunnel junction (MTJ) includes a magnetic free layer, having a variable magnetization direction; an insulating tunnel barrier located adjacent to the free layer; a magnetic fixed layer having an invariable magnetization direction, the fixed layer disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer, wherein the free layer and the fixed layer have perpendicular magnetic anisotropy; and one or more of: a composite fixed layer, the composite fixed layer comprising a dusting layer, a spacer layer, and a reference layer; a synthetic antiferromagnetic (SAF) fixed layer structure, the SAF fixed layer structure comprising a SAF spacer located between the fixed layer and a second fixed magnetic layer; and a dipole layer, wherein the free layer is located between the dipole layer and the tunnel barrier.
摘要翻译： 磁性隧道结（MTJ）包括具有可变磁化方向的无磁性层; 位于邻近自由层的绝缘隧道屏障; 具有不变磁化方向的磁性固定层，所述固定层邻近所述隧道势垒设置，使得所述隧道势垒位于所述自由层和所述固定层之间，其中所述自由层和所述固定层具有垂直的磁各向异性; 以及复合固定层中的一个或多个，所述复合固定层包括除尘层，间隔层和参考层; 合成反铁磁（SAF）固定层结构，SAF固定层结构包括位于固定层和第二固定磁性层之间的SAF间隔物; 和偶极子层，其中自由层位于偶极层和隧道势垒之间。
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10.发明申请MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER AND TUNNEL BARRIER 审中-公开磁铁隧道与铁矿石层之间的自由层和隧道障碍公开(公告)号：US20120241878A1
公开(公告)日：2012-09-27
申请号：US13071043
申请日：2011-03-24
IPC分类号： H01L29/82 , H01L21/8239
CPC分类号： H01L43/12 , B82Y40/00 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F41/307 , H01L43/08
摘要： A magnetic tunnel junction (MTJ) for a magnetic random access memory (MRAM) includes a magnetic free layer having a variable magnetization direction; an iron (Fe) dusting layer formed on the free layer; an insulating tunnel barrier formed on the dusting layer; and a magnetic fixed layer having an invariable magnetization direction, disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer; wherein the free layer and the fixed layer have perpendicular magnetic anisotropy and are magnetically coupled through the tunnel barrier.
摘要翻译： 用于磁性随机存取存储器（MRAM）的磁性隧道结（MTJ）包括具有可变磁化方向的无磁性层; 形成在自由层上的铁（Fe）除尘层; 形成在除尘层上的绝缘隧道屏障; 以及具有不变磁化方向的磁性固定层，邻近所述隧道势垒设置，使得所述隧道势垒位于所述自由层和所述固定层之间; 其中自由层和固定层具有垂直的磁各向异性并且通过隧道势垒磁耦合。
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