发明申请
US20130005051A1 MAGNETIC STACKS WITH PERPENDICULAR MAGNETIC ANISOTROPY FOR SPIN MOMENTUM TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY
有权
具有用于旋转磁传递随机访问存储器的全息磁性ANISOTROPY的磁性堆叠
- 专利标题： MAGNETIC STACKS WITH PERPENDICULAR MAGNETIC ANISOTROPY FOR SPIN MOMENTUM TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY
- 专利标题（中）： 具有用于旋转磁传递随机访问存储器的全息磁性ANISOTROPY的磁性堆叠
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申请号： US13602533申请日： 2012-09-04
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公开(公告)号： US20130005051A1公开(公告)日： 2013-01-03
- 发明人: Guohan Hu , Janusz J. Nowak , Philip L. Trouilloud , Daniel C. Worledge
- 申请人： Guohan Hu , Janusz J. Nowak , Philip L. Trouilloud , Daniel C. Worledge
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L43/06
- IPC分类号： H01L43/06
摘要：
A magnetic tunnel junction (MTJ) includes a magnetic free layer, having a variable magnetization direction; an insulating tunnel barrier located adjacent to the free layer; a magnetic fixed layer having an invariable magnetization direction, the fixed layer disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer, wherein the free layer and the fixed layer have perpendicular magnetic anisotropy; and one or more of: a composite fixed layer, the composite fixed layer comprising a dusting layer, a spacer layer, and a reference layer; a synthetic antiferromagnetic (SAF) fixed layer structure, the SAF fixed layer structure comprising a SAF spacer located between the fixed layer and a second fixed magnetic layer; and a dipole layer, wherein the free layer is located between the dipole layer and the tunnel barrier.
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