Spread spectrum receiver
    1.
    发明授权
    Spread spectrum receiver 失效
    扩频接收机

    公开(公告)号:US5105436A

    公开(公告)日:1992-04-14

    申请号:US554537

    申请日:1990-07-18

    IPC分类号: H04B1/707 H04B1/709

    CPC分类号: H04B1/709 H04B1/70712

    摘要: A spread spectrum receiver using a correlator includes a pattern matching circuit for deciding presence or absence of a pulse output which is obtained upon coincidence between the pattern of a correlator output and a predetermined pattern, so as to switch a PN code inside the receiver or the center frequency of a received signal when absence of the pulse output is acknowledged.

    摘要翻译: 使用相关器的扩频接收机包括:模式匹配电路,用于判定在相关器输出的模式与预定模式之间一致时获得的脉冲输出的存在或不存在,以便切换接收器内的PN码或 确认不存在脉冲输出时的接收信号的中心频率。

    Spread spectrum communication device
    2.
    发明授权
    Spread spectrum communication device 失效
    扩频通信设备

    公开(公告)号:US5048052A

    公开(公告)日:1991-09-10

    申请号:US475185

    申请日:1990-02-02

    CPC分类号: H04B1/709 H04B1/70718

    摘要: The present invention is a spread spectrum communications system where the plural pseudonoise codes are switched such that one pseudonoise code represents binary "1" and another pseudonoise code represents binary "0" of the binary data to be transmitted. Further, in the receiver, a reference pseudonoise code is generated which is asynchronous with respect to the carrier and with respect to the pseudonoise codes of the transmitter. The reference pseudonoise code is used in a convolver to reproduce the transmitted information signal.

    摘要翻译: 本发明是一种扩频通信系统,其中多个伪噪声码被切换,使得一个伪噪声码表示二进制“1”,另一个伪噪声码表示要发送的二进制数据的二进制“0”。 此外,在接收机中,生成与载波相对于发射机的伪噪声码异步的参考伪噪声码。 在卷积器中使用参考伪噪声码来再现发送的信息信号。

    Surface acoustic wave device for differential phase shift keying
convolving
    3.
    发明授权
    Surface acoustic wave device for differential phase shift keying convolving 失效
    用于差分相移键控卷积的声表面波器件

    公开(公告)号:US4841470A

    公开(公告)日:1989-06-20

    申请号:US875855

    申请日:1986-06-18

    摘要: A differential phase shift keying convolver having a plurality of tracks includes at least one track where an opposite phase convolution output is produced. Each track includes two output gates spaced at the center for differential phase shift keying demodulation. Among these output gates, some gates selected in accordance with the phase relationship between convolution outputs are connected to provide sum and/or difference outputs of the convolution signals. The opposite phase convolution outputs can be produced by arranging at least one of the input transducers in a step-like configuration, by using multistrip couplers, or by providing a metal film in a selected position of the traveling path of surface acoustic waves for application of a control voltage.

    摘要翻译: 具有多个轨道的差分相移键控卷积器包括产生相反相位卷积输出的至少一个轨道。 每个轨道包括在中心间隔开的差分相移键控解调的两个输出门。 在这些输出门之中,根据卷积输出之间的相位关系选择的一些门被连接以提供卷积信号的和和/或差分输出。 相反的卷积输出可以通过使用多段耦合器布置至少一个输入换能器,通过使用多段耦合器,或者通过在表面声波的行进路径的选定位置提供金属膜来产生,以应用 一个控制电压。

    Variable capacitance device
    4.
    发明授权
    Variable capacitance device 失效
    可变电容器件

    公开(公告)号:US4529995A

    公开(公告)日:1985-07-16

    申请号:US397283

    申请日:1982-07-12

    IPC分类号: H01L29/93

    CPC分类号: H01L29/93

    摘要: Variable capacitance device consisting of a semiconductor substrate having a first conductivity type semiconductor layer, at least one second conductivity type semiconductor region formed in a surface portion of said first conductivity type semiconductor layer, and a barrier for generating a depletion layer formed on the surface opposite to said surface portion of said first conductivity type semiconductor layer, in which a capacitance reading-out section is disposed on said at least one second conductivity type semiconductor region. A depletion layer control section is disposed on said surface opposite to said surface portion; and said depletion layer control section is reversely biased so that said depletion layer extends from said barrier to a junction portion between said first conductivity type semiconductor layer and said at least one second conductivity type semiconductor region, whereby a capacitance variation results at said capacitance reading-out section in response to variation of the reverse bias voltage.

    摘要翻译: 由具有第一导电类型半导体层的半导体衬底,形成在所述第一导电类型半导体层的表面部分中的至少一个第二导电类型半导体区域和用于产生在相对的表面上形成的耗尽层的势垒组成的可变电容器件 到所述第一导电类型半导体层的所述表面部分,其中电容读出部分设置在所述至少一个第二导电类型半导体区域上。 耗尽层控制部分设置在与所述表面部分相对的所述表面上; 并且所述耗尽层控制部分被反向偏置,使得所述耗尽层从所述势垒延伸到所述第一导电类型半导体层和所述至少一个第二导电类型半导体区域之间的接合部分,由此在所述电容读取 - 响应于反向偏置电压的变化。

    Surface-acoustic-wave device
    5.
    发明授权
    Surface-acoustic-wave device 失效
    表面声波装置

    公开(公告)号:US4357553A

    公开(公告)日:1982-11-02

    申请号:US177966

    申请日:1980-08-14

    IPC分类号: H03F13/00 H03F7/00

    CPC分类号: H03F13/00

    摘要: A surface-acoustic-wave device has a laminate formed of a semiconductor and a piezoelectric layer and a depletion layer control means locally provided at an interface portion of the semiconductor and said piezoelectric layer, wherein a parametric interaction is caused at a region other than an area where the depletion layer control means is provided and a depletion layer capacitance is controlled by applying a DC bias voltage and a pumping voltage to the depletion layer control means.

    摘要翻译: 表面声波装置具有由半导体和压电层形成的叠层和局部地设置在半导体和所述压电层的界面部分的耗尽层控制装置,其中在除了 通过向耗尽层控制装置施加DC偏置电压和泵浦电压来控制耗尽层控制装置的耗尽层电容。

    Elastic surface wave device
    7.
    发明授权
    Elastic surface wave device 失效
    弹性表面波装置

    公开(公告)号:US4233530A

    公开(公告)日:1980-11-11

    申请号:US948826

    申请日:1978-10-05

    IPC分类号: H03F7/04 H03F13/00 H03F7/00

    CPC分类号: H03F7/04 H03F13/00

    摘要: An elastic surface wave device, especially amplifier which includes input and output means for electrical signals provided so as to be spaced on a surface of a piezoelectric material which composes a laminate in combination with a semiconductor, and an electrode provided in a surface signal wave propagation path between said input and output means for application of a d.c. bias voltage and supply of a pumping power.

    摘要翻译: 一种弹性表面波装置,特别是放大器,其包括用于电信号的输入和输出装置,该输入和输出装置被设置成与构成与半导体结合的层压板的压电材料的表面间隔开,以及设置在表面信号波传播中的电极 用于施加直流的所述输入和输出装置之间的路径 偏置电压和泵浦功率的供应。

    Surface-acoustic-wave device
    8.
    发明授权
    Surface-acoustic-wave device 失效
    表面声波装置

    公开(公告)号:US5033063A

    公开(公告)日:1991-07-16

    申请号:US336211

    申请日:1989-04-11

    CPC分类号: G06G7/195 H03H9/6426

    摘要: A surface-acoustic-wave device includes at least two surface-acoustic-wave transducers made from metal and disposed along a surface acoustic wave propagating direction on a piezoelectric substrate. At least one of the transducers has a different bandwidth, and a convolver output gate electrode in the form a rectangular metal layer is provided between the transducer having the different bandwidth and another transducer.

    摘要翻译: 表面声波装置包括至少两个由金属制成的表面声波换能器,并沿压电基片上的表面声波传播方向设置。 换能器中的至少一个具有不同的带宽,并且形成矩形金属层的卷积器输出栅极电极设置在具有不同带宽的换能器和另一个换能器之间。

    Surface acoustic wave device having AlN and ZnO layers on a Si substrate
    9.
    发明授权
    Surface acoustic wave device having AlN and ZnO layers on a Si substrate 失效
    在Si衬底上具有AlN和ZnO层的表面声波器件

    公开(公告)号:US4567393A

    公开(公告)日:1986-01-28

    申请号:US618971

    申请日:1984-06-11

    CPC分类号: H03H9/25

    摘要: A surface acoustic wave device comprises a silicon substrate, an aluminum nitride layer provided on the silicon substrate, a zinc oxide layer provided on the aluminum nitride layer, and electrodes provided on either the silicon substrate, aluminum nitride layer or zinc oxide layer. Propagation is in the [001]- or [011]-axis direction on (100) Si, [001]- or [110]-axis on (110) Si, [112]-axis on (111) Si, or [111]-axis on (112) Si.

    摘要翻译: 表面声波装置包括硅衬底,设置在硅衬底上的氮化铝层,设置在氮化铝层上的氧化锌层,以及设置在硅衬底,氮化铝层或氧化锌层上的电极。 在(111)Si上的(110)Si,[112]轴上,(100)Si,[001] - 或[1&upbar&10]轴上的传播是[001] - [011] - 轴方向, 或(11)上的[11&upbar&1]轴。

    Unidirectional transducer for a surface-acoustic-wave device and a
method of making same
    10.
    发明授权
    Unidirectional transducer for a surface-acoustic-wave device and a method of making same 失效
    用于表面声波装置的单向传感器及其制造方法

    公开(公告)号:US4521711A

    公开(公告)日:1985-06-04

    申请号:US482755

    申请日:1983-04-07

    IPC分类号: H03H9/145 H03H9/25

    CPC分类号: H03H9/14505 H03H9/14508

    摘要: A surface-acoustic-wave device includes a transducer in which three transducer electrodes are provided on a non-piezoelectric or piezoelectric substrate with 0.degree., 120.degree. and 240.degree. phases, and one of the leading electrodes connected to one of the transducer electrodes extends along the surface of a piezoelectric layer provided on the substrate.

    摘要翻译: 表面声波装置包括在0度,120度和240度相位的非压电或压电衬底上设置三个换能器电极的换能器,并且连接到一个换能器电极的一个引出电极延伸 沿着设置在基板上的压电层的表面。